The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding (English)
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In:
E-MRS Spring Meeting, 2008, Symposium I, Front-End Junction and Contact Formation in Future Silicon/Germanium based Devices, 2008
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43-48
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2008
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ISSN:
- Conference paper / Print
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Title:The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding
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Contributors:Yeong, S.H. ( author ) / Colombeau, B. ( author ) / Mok, K.R.C. ( author ) / Benistant, F. ( author ) / Liu, C.J. ( author ) / Wee, A.T.S. ( author ) / Dong, G. ( author ) / Chan, L. ( author ) / Srinivasan, M.P. ( author )
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Published in:Materials Science and Engineering, Part B (Solid-State Materials for Advanced Technology) ; 154-155, 1-3 ; 43-48
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Publisher:
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Publication date:2008
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Size:6 Seiten, 20 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Contract Number:PII:S0921510708003796
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Keywords:Aktivierungsenergie , Atomphysik , Borzusatz , Defektoskopie , Defektzustand , Diffusion , Elementhalbleiter , Halbleiterdotierung , Halbleiterherstellung , Halbleiterübergang , Ionenimplantation , Kristallfehler , Kristallphysik , Leerstellen-Cluster , Punktfehler , Silicium , Stickstoffzusatz , Zwischengitteratom
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