A brief review of selected aspects of the materials science of ball bonding (English)
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In:
Microelectronics Reliability
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50
, 1
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1-20
;
2010
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ISSN:
- Article (Journal) / Print
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Title:A brief review of selected aspects of the materials science of ball bonding
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Additional title:Ein kurzer Überblick über ausgewählte Aspekte der Materialwissenschaft des Ball-Bondverfahrens
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Contributors:Breach, C.D. ( author ) / Wulff, F.W. ( author )
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Published in:Microelectronics Reliability ; 50, 1 ; 1-20
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Publisher:
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Publication date:2010
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Size:20 Seiten, 34 Bilder, 3 Tabellen, 158 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 50, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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A brief review of selected aspects of the materials science of ball bondingBreach, C.D. / Wulff, F.W. et al. | 2009
- 21
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Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memoriesKim, Hee-Dong / An, Ho-Myoung / Seo, Yujeong / Zhang, Yongjie / Park, Jong Sun / Kim, Tae Geun et al. | 2009
- 26
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ESD protection for thin gate oxides in 65nmNotermans, Guido / Smedes, Theo / Mrčarica, Željko / Jong, Peter de / Stephan, Ralph / Zwol, Hans van / Maksimovic, Dejan et al. | 2009
- 32
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Doping compensation for increased robustness of fast recovery silicon diodesVobecký, J. / Záhlava, V. / Komarnitskyy, V. et al. | 2009
- 39
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Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni,Zn-doped)/n-Si Schottky diodesDökme, İ. / Altındal, Ş. / Tunç, T. / Uslu, İ. et al. | 2009
- 45
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Total-dose-induced edge effect in SOI NMOS transistors with different layoutsLiu, Jie / Zhou, Jicheng / Luo, Hongwei / Kong, Xuedong / En, Yunfei / Shi, Qian / He, Yujuan et al. | 2009
- 48
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Design of 2xVDD-tolerant mixed-voltage I/O buffer against gate-oxide reliability and hot-carrier degradationTsai, Hui-Wen / Ker, Ming-Dou et al. | 2009
- 57
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DMOS FET parameter drift kinetics from microscopic modelingAlagi, F. et al. | 2009
- 63
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Evaluation of the nanoindentation behaviors of SiGe epitaxial layer on Si substrateHe, Bo-Ching / Cheng, Chun-Hu / Wen, Hua-Chiang / Lai, Yi-Shao / Yang, Ping-Feng / Lin, Meng-Hung / Wu, Wen-Fa / Chou, Chang-Pin et al. | 2009
- 70
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Simulation of electrical characteristics of InP double-heterojunction bipolar transistors with InGaAsSb baseChang, Yang-Hua / Syu, Rong-Hao et al. | 2009
- 75
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Fracture phenomena induced by Front-End/Back-End interactions: Dedicated failure analysis and numerical developmentsGallois-Garreignot, Sébastien / Fiori, Vincent / Nelias, D. et al. | 2009
- 86
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Accuracy of simplified printed circuit board finite element modelsAmy, Robin Alastair / Aglietti, Guglielmo S. / Richardson, Guy et al. | 2009
- 98
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Finite volume based CFD simulation of pressurized flip-chip underfill encapsulation processKhor, C.Y. / Abdul Mujeebu, M. / Abdullah, M.Z. / Che Ani, F. et al. | 2009
- 106
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Modeling of multi-layered structure containing heterogeneous material layer with randomly distributed particles using infinite element methodLiu, De-Shin / Zhuang, Zhen-Wei / Chen, Ching-Yang / Chung, Cho-Liang et al. | 2009
- 116
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A reliability model for SAC solder covering isothermal mechanical cycling and thermal cycling conditionsHerkommer, Dominik / Punch, Jeff / Reid, Michael et al. | 2009
- 127
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Design of experiments to investigate reliability for solder joints PBGA package under high cycle fatigueWu, Mei-Ling et al. | 2009
- 140
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Rapid assessment of BGA life under vibration and bending, and influence of input parameter uncertaintiesWu, Mei-Ling / Barker, Donald et al. | 2009
- 149
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Using Boolean satisfiability for computing soft error rates in early design stagesShazli, S.Z. / Tahoori, M.B. et al. | 2009
- I
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Calendar| 2009
- IFC
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Inside front cover - Editorial board| 2009