High-Performance Implanted-Channel SiC MESFETs (English)
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In:
Electron Device Letters (IEEE)
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32
, 3
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243-245
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2011
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ISSN:
- Article (Journal) / Print
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Title:High-Performance Implanted-Channel SiC MESFETs
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Contributors:Sriram, S. ( author ) / Suvorov, A.V. ( author ) / Henning, J.H. ( author ) / Namishia, D.J. ( author ) / Hagleitner, H. ( author ) / Fisher, J.K. ( author ) / Smith, T.J. ( author ) / Alcorn, T.S. ( author ) / Pulz, W.T. ( author )
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Published in:Electron Device Letters (IEEE) ; 32, 3 ; 243-245
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Publisher:
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Publication date:2011
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Size:3 Seiten, 9 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 32, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 227
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What Is in a Page Charge?Saha, Samar K. et al. | 2011
- 228
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New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive MemoryJubong Park, / Minseok Jo, / Seungjae Jung, / Joonmyoung Lee, / Wootae Lee, / Seonghyun Kim, / Sangsu Park, / Jungho Shin, / Hyunsang Hwang, et al. | 2011
- 231
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Modeling and Performance Investigation of the Double-Gate Carbon Nanotube TransistorXuebei Yang, / Mohanram, Kartik et al. | 2011
- 234
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N-Channel Germanium MOSFET Fabricated Below 360 degree C by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICsPark, J.-H. / Kuzum, D. / Jung, W.-S. / Saraswat, K.C. et al. | 2011
- 234
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N-Channel Germanium MOSFET Fabricated Below 360 $^{ \circ}\hbox{C}$ by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICsJin-Hong Park, / Kuzum, D / Woo-Shik Jung, / Saraswat, K C et al. | 2011
- 237
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Local-Stress-Induced Trap States in SOI Layers With Different Levels of Roughness at SOI/BOX InterfacesNakajima, Y / Watanabe, Y / Hanajiri, T / Toyabe, T / Sugano, T et al. | 2011
- 240
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Temperature Dependence of Drain Current Mismatch in Nanoscale Uniaxial-Strained PMOSFETsKuo, Jack J.-Y / Chen, William P.-N / Pin Su, et al. | 2011
- 243
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High-Performance Implanted-Channel SiC MESFETsSriram, S / Suvorov, A V / Henning, J H / Namishia, D J / Hagleitner, H / Fisher, J K / Smith, T J / Alcorn, T S / Pulz, W T et al. | 2011
- 246
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Contact Resistance to a One-Dimensional Quasi-Ballistic Nanotube/WireSolomon, Paul M et al. | 2011
- 249
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Impact of Self-Heating in SOI FinFETs on Analog Circuits and Interdie VariabilityMonga, U / Aghassi, J / Siprak, D / Sedlmeir, J / Hanke, C / Kubrak, V / Heinrich, R / Fjeldly, T A et al. | 2011
- 252
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Oxygen-Soluble Gate Electrodes for Prolonged High- K Gate-Stack ReliabilityRaghavan, N. / Pey, K.L. / Wu, X. / Liu, W. / Li, X. / Bosman, M. / Kauerauf, T. et al. | 2011
- 252
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Oxygen-Soluble Gate Electrodes for Prolonged High-$ \kappa$ Gate-Stack ReliabilityRaghavan, Nagarajan / Pey, Kin Leong / Xing Wu, / Wenhu Liu, / Xiang Li, / Bosman, Michel / Kauerauf, Thomas et al. | 2011
- 255
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Intrinsic Reliability Improvement in Biaxially Strained SiGe p-MOSFETsDeora, S / Paul, A / Bijesh, R / Huang, J / Klimeck, G / Bersuker, G / Krisch, P D / Jammy, R et al. | 2011
- 258
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A Novel Integration of Si Schottky Diode for mmWave CMOS, Low-Power SoCs, and MoreTrivedi, V P / John, J P / Kun-Hin To, / Huang, W M et al. | 2011
- 261
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Bulk Planar Junctionless Transistor (BPJLT): An Attractive Device Alternative for ScalingGundapaneni, S / Ganguly, S / Kottantharayil, A et al. | 2011
- 264
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Multifunctional Field-Effect Transistor for High-Density Integrated CircuitsMarino, F A / Meneghesso, G et al. | 2011
- 267
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High-Performance Partially Depleted SOI PFETs With In Situ Doped SiGe Raised Source/Drain and Implant-Free ExtensionKhakifirooz, Ali / Kangguo Cheng, / Jin Cai, / Kimball, Anne / Kulkarni, Pranita / Reznicek, Alexander / Adam, Thomas / Edge, Lisa / Huiming Bu, / Doris, Bruce et al. | 2011
- 270
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Low-Phase-Noise Graphene FETs in Ambipolar RF ApplicationsMoon, J S / Curtis, D / Zehnder, D / Kim, S / Gaskill, D K / Jernigan, G G / Myers-Ward, R L / Eddy, C R / Campbell, P M / Lee, K.-M et al. | 2011
- 273
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Short-Channel Performance Improvement by Raised Source/Drain Extensions With Thin Spacers in Trigate Silicon Nanowire MOSFETsSaitoh, M / Nakabayashi, Y / Uchida, K / Numata, T et al. | 2011
- 276
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Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching MemoryBin Gao, / Haowei Zhang, / Bing Chen, / Lifeng Liu, / Xiaoyan Liu, / Ruqi Han, / Jinfeng Kang, / Zheng Fang, / Hongyu Yu, / Bin Yu, et al. | 2011
- 279
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Improved Drive Current in RF Vertical MOSFETS Using Hydrogen AnnealHakim, M M A / Abuelgasim, A / Tan, L / de Groot, C H / Redman-White, W / Hall, S / Ashburn, P et al. | 2011
- 282
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A Novel Operation Scheme for Oxide-Based Resistive-Switching Memory Devices to Achieve Controlled Switching BehaviorsChen, B / Gao, B / Sheng, S W / Liu, L F / Liu, X Y / Chen, Y S / Wang, Y / Han, R Q / Yu, B / Kang, J F et al. | 2011
- 285
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Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in N2O or NOMiyake, H. / Kimoto, T. / Suda, J. et al. | 2011
- 285
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Improvement of Current Gain in 4H-SiC BJTs by Surface Passivation With Deposited Oxides Nitrided in $\hbox{N}_{2}\hbox{O}$ or NOMiyake, Hiroki / Kimoto, T / Suda, J et al. | 2011
- 288
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Maximized Benefit of La–Al–O Higher-$k$ Gate Dielectrics by Optimizing the La/Al Atomic RatioArimura, Hiroaki / Brown, Stephen L / Callegari, Alessandro / Kellock, Andrew / Bruley, John / Copel, Matt / Watanabe, Heiji / Narayanan, Vijay / Ando, Takashi et al. | 2011
- 291
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High-Performance 90-nm Dual-Gate nMOSFETs With Field-Plate TechnologyFu, J S / Hsien-Chin Chiu, / Po-Yu Ke, / Ting-Huei Chen, / Wu-Shiung Feng, et al. | 2011
- 294
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Concurrent NBTI and Hot-Carrier Degradation in p-Channel MuGFETsTae Ha Kim, / Chong Gun Yu, / Jong Tae Park, et al. | 2011
- 297
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Sub-1-dB Noise Figure Performance of High-Power Field-Plated GaN HEMTsMoon, J S / Wong, D / Hashimoto, P / Hu, M / Milosavljevic, I / Willadsen, P / McGuire, C / Burnham, S / Micovic, M / Wetzel, M et al. | 2011
- 300
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Planar Nearly Ideal Edge-Termination Technique for GaN DevicesOzbek, A M / Baliga, B J et al. | 2011
- 303
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Normally Off AlGaN/GaN Metal–2DEG Tunnel-Junction Field-Effect TransistorsLi Yuan, / Hongwei Chen, / Chen, K J et al. | 2011
- 306
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High-Performance 1- 1mu mGaN n-MOSFET With MgO/MgO- TiO2Stacked Gate DielectricsLee, K.-T. / Huang, C.-F. / Gong, J. / Lee, C.-T. et al. | 2011
- 306
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High-Performance 1-$\mu\hbox{m}$ GaN n-MOSFET With MgO/MgO–$\hbox{TiO}_{2}$ Stacked Gate DielectricsKo-Tao Lee, / Chih-Fang Huang, / Jeng Gong, / Chia-Tien Lee, et al. | 2011
- 309
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Enhancement-Mode InAlN/AlN/GaN HEMTs With $ \hbox{10}^{-12}\ \hbox{A/mm}$ Leakage Current and $ \hbox{10}^{12}$ on/off Current RatioRonghua Wang, / Saunier, Paul / Yong Tang, / Tian Fang, / Xiang Gao, / Shiping Guo, / Snider, Gregory / Fay, Patrick / Jena, Debdeep / Huili Xing, et al. | 2011
- 309
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Enhancement-Mode InAlN/AlN/GaN HEMTs With 10ˆ-ˆ1ˆ2Leakage Current and 10ˆ1ˆ2on/off Current RatioWang, R. / Saunier, P. / Tang, Y. / Fang, T. / Gao, X. / Guo, S. / Snider, G. / Fay, P. / Jena, D. / Xing, H. et al. | 2011
- 312
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Correlation Between AlGaN/GaN MISHFET Performance and $ \hbox{HfO}_{2}$ Insulation Layer QualityJunxia Shi, / Eastman, Lester F et al. | 2011
- 312
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Correlation Between AlGaN/GaN MISHFET Performance and HfO2Insulation Layer QualityShi, J. / Eastman, L.F. et al. | 2011
- 315
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Ultralow-Voltage Transparent IN2O3 Nanowire Electric-Double-Layer TransistorsLiu, H. / Sun, J. / Jiang, J. / Tang, Q. / Wan, Q. et al. | 2011
- 315
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Ultralow-Voltage Transparent $\hbox{In}_{2} \hbox{O}_{3}$ Nanowire Electric-Double-Layer TransistorsHuixuan Liu, / Jia Sun, / Jie Jiang, / Qingxin Tang, / Qing Wan, et al. | 2011
- 318
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Temperature-Dependent Microwave Noise Characteristics in ALD $\hbox{Al}_{2}\hbox{O}_{3}$/AlGaN/GaN MISHEMTs on Silicon SubstrateLiu, Z H / Ng, G I / Arulkumaran, S / Maung, Y K T / Teo, K L / Foo, S C / Vicknesh, S et al. | 2011
- 318
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Temperature-Dependent Microwave Noise Characteristics in ALD Al2O3/AlGaN/GaN MISHEMTs on Silicon SubstrateLiu, Z.H. / Ng, G.I. / Arulkumaran, S. / Maung, Y.K.T. / Teo, K.L. / Foo, S.C. / Vicknesh, S. et al. | 2011
- 321
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Charge-Trapping-Induced Parasitic Capacitance and Resistance in SONOS TFTs Under Gate Bias StressChia-Sheng Lin, / Ying-Chung Chen, / Ting-Chang Chang, / Fu-Yen Jian, / Hung-Wei Li, / Shih-Ching Chen, / Ying-Shao Chuang, / Te-Chih Chen, / Ya-Hsiang Tai, / Ming-Hsien Lee, et al. | 2011
- 324
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Oxide-Thin-Film-Transistor-Based Ferroelectric Memory ArrayByeong Hoon Kim, / Chun Won Byun, / Sung-Min Yoon, / Shin Hyuk Yang, / Soon-Won Jung, / Min Ki Ryu, / Sang-Hee Ko Park, / Chi-Sun Hwang, / Kyoung-Ik Cho, / Oh-Sang Kwon, et al. | 2011
- 327
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High-Performance Poly-Si Nanowire Thin-Film Transistors Using the $\hbox{HfO}_{2}$ Gate DielectricChen-Ming Lee, / Bing-Yue Tsui, et al. | 2011
- 327
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High-Performance Poly-Si Nanowire Thin-Film Transistors Using the HfO2Gate DielectricLee, C.-M. / Tsui, B.-Y. et al. | 2011
- 330
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High-Performance Single-Crystal-Like Nanowire Poly-Si TFTs With Spacer Patterning TechniqueTsung-Kuei Kang, / Ta-Chuan Liao, / Chia-Min Lin, / Han-Wen Liu, / Huang-Chung Cheng, et al. | 2011
- 333
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Thermal Sensor Using Poly-Si Thin-Film Transistor With Widened Detectable Temperature RangeNakashima, A / Sagawa, Y / Kimura, M et al. | 2011
- 336
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Trap Density of States Measured by Photon Probe on Amorphous-InGaZnO Thin-Film TransistorsYoun-Gyoung Chang, / Dae-Hwan Kim, / Gunwoo Ko, / Kimoon Lee, / Jae Hoon Kim, / Seongil Im, et al. | 2011
- 339
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Photosensitivity of Field-Effect Transistors Based on ZnO Nanowire NetworksShi-Ming Peng, / Yan-Kuin Su, / Liang-Wen Ji, / Sheng-Joue Young, / Cheng-Zhi Wu, / Wei-Bin Cheng, / Wan-Chun Chao, / Chi-Nan Tsai, et al. | 2011
- 342
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Improvement of ESD Level of GaN-Based LEDs Using Antiparallel Ga- and N-Polar Domains in p-GaN LayerJenn-Bin Huang, / Lu-Sheng Hong, / Chen-Chia Chou, et al. | 2011
- 345
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19.7% Efficient All-Screen-Printed Back-Contact Back-Junction Silicon Solar Cell With Aluminum-Alloyed EmitterWoehl, R / Krause, J / Granek, F / Biro, D et al. | 2011
- 348
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The Emission Properties of Integrated Organic Light Emitting Diodes With Organic Photo Sensor for Emotional Lighting ApplicationsJin Wook Jeong, / Young Wook Park, / Tae Hyun Park, / Jin Hwan Choi, / Hyun Ju Choi, / Eun Ho Song, / Jeong Ik Lee, / Hye Yong Chu, / Byeong Kwon Ju, et al. | 2011
- 351
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Abnormal Dopant Distribution in $\hbox{POCl}_{3}$ -Diffused $\hbox{N}^{+}$ Emitter of Textured Silicon Solar CellsYoung-Woo Ok, / Rohatgi, A / Yeon-Ho Kil, / Sung-Eun Park, / Dong-Hwan Kim, / Joon-Sung Lee, / Chel-Jong Choi, et al. | 2011
- 351
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Abnormal Dopant Distribution in POCl3-Diffused Nˆ+ Emitter of Textured Silicon Solar CellsOk, Y.-W. / Rohatgi, A. / Kil, Y.-H. / Park, S.-E. / Kim, D.-H. / Lee, J.-S. / Choi, C.-J. et al. | 2011
- 354
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EUV and Soft X-Ray Quantum Efficiency Measurements of a Thinned Back-Illuminated CMOS Active Pixel SensorStern, Robert A / Shing, Lawrence / Waltham, Nick / Mapson-Menard, Helen / Harris, Andrew / Pool, Peter et al. | 2011
- 357
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High-Gain Multiple-Gate Photodetector With Nanowires in the ChannelRoudsari, A Fadavi / Saini, S S / Nixon, O / Anantram, M P et al. | 2011
- 360
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Demonstration of 3500-V 4H-SiC Lateral MOSFETsWen-Shan Lee, / Cheng-Wei Lin, / Ming-Hsien Yang, / Chih-Fang Huang, / Jeng Gong, / Zhao Feng, et al. | 2011
- 363
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Reset Instability in $\hbox{Cu}/\hbox{ZrO}_{2}$ :Cu/Pt RRAM DeviceYingtao Li, / Shibing Long, / Hangbing Lv, / Qi Liu, / Wei Wang, / Qin Wang, / Zongliang Huo, / Yan Wang, / Sen Zhang, / Su Liu, et al. | 2011
- 363
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Reset Instability in CU/ZrO2: Cu/Pt RRAM DeviceLi, Y. / Long, S. / Lv, H. / Liu, Q. / Wang, W. / Wang, Q. / Huo, Z. / Wang, Y. / Zhang, S. / Liu, S. et al. | 2011
- 366
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Ultralow Switching Energy Ni/$\hbox{GeO}_{x}$ /HfON/TaN RRAMCheng, C H / Chin, A / Yeh, F S et al. | 2011
- 366
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Ultralow Switching Energy Ni/ GeOx/HfON/TaN RRAMCheng, C.H. / Chin, A. / Yeh, F.S. et al. | 2011
- 369
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A Nanocrystalline Silicon Surface-Passivation Layer on an HR-Si Substrate for RFICsChao-Jung Chen, / Ruey-Lue Wang, / Yan-Kuin Su, / Ting-Jen Hsueh, et al. | 2011
- 372
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Location of Wire Faults Using Chaotic SignalAnbang Wang, / Mingjiang Zhang, / Hang Xu, / Yuncai Wang, et al. | 2011
- 375
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Multibit Operation of Cu/Cu-GeTe/W Resistive Memory Device Controlled by Pulse Voltage Magnitude and WidthSang-Jun Choi, / Ki-Hong Kim, / Gyeong-Su Park, / Hyung-Jin Bae, / Woo-Young Yang, / Soohaeng Cho, et al. | 2011
- 378
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Novel Nanophase-Switching ESD ProtectionLin Lin, / Lijie Zhang, / Xin Wang, / Jian Liu, / Hui Zhao, / He Tang, / Qiang Fang, / Zitao Shi, / Wang, Albert / Ru Huang, et al. | 2011
- 381
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Arsenic-Implanted HfON Charge-Trapping Flash Memory With Large Memory Window and Good RetentionTsai, C Y / Lee, T H / Chin, A et al. | 2011
- 384
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Characterizing Voltage Linearity and Leakage Current of High Density $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{HfO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ MIM CapacitorsSung Kyun Lee, / Kwan Soo Kim, / Soon-Wook Kim, / Dal Jin Lee, / Sang Jong Park, / Sibum Kim, et al. | 2011
- 384
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Characterizing Voltage Linearity and Leakage Current of High Density Al2O3/HfO2/Al2O3 MIM CapacitorsLee, S.K. / Kim, K.S. / Kim, S.-W. / Lee, D.J. / Park, S.J. / Kim, S. et al. | 2011
- 387
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Ultrahigh on/off -Current Ratio for Resistive Memory Devices With Poly(N-Vinylcarbazole)/Poly(3, 4-Ethylenedioxythiophene)–Poly(Styrenesulfonate) Stacking BilayerPei Ying Lai, / Jen-Sue Chen, et al. | 2011
- 390
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Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation LayerYu-Sheng Chen, / Heng-Yuan Lee, / Pang-Shiu Chen, / Pei-Yi Gu, / Wen-Hsing Liu, / Wei-Su Chen, / Yen-Ya Hsu, / Chen-Han Tsai, / Chen, Frederick / Ming-Jinn Tsai, et al. | 2011
- 390
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Good Endurance and Memory Window for Ti/HfOPillar RRAM at 50-nm Scale by Optimal Encapsulation LayerChen, Y.-S. / Lee, H.-Y. / Chen, P.-S. / Gu, P.-Y. / Liu, W.-H. / Chen, W.-S. / Hsu, Y.-Y. / Tsai, C.-H. / Chen, F. / Tsai, M.-J. et al. | 2011
- 393
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Closed-Form Expressions for the Resistance and the Inductance of Different Profiles of Through-Silicon ViasYuanjun Liang, / Ye Li, et al. | 2011
- 396
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A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar IntegrationTran, X A / Yu, H Y / Yeo, Y C / Wu, L / Liu, W J / Wang, Z R / Fang, Z / Pey, K L / Sun, X W / Du, A Y et al. | 2011
- 396
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A High-Yield HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar IntegrationTran, X.A. / Yu, H.Y. / Yeo, Y.C. / Wu, L. / Liu, W.J. / Wang, Z.R. / Fang, Z. / Pey, K.L. / Sun, X.W. / Du, A.Y. et al. | 2011
- 399
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Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive SwitchingChang Bum Lee, / Dong Soo Lee, / Benayad, A / Seung Ryul Lee, / Man Chang, / Myoung-Jae Lee, / Jihyun Hur, / Chang Jung Kim, / U-In Chung, et al. | 2011
- 402
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Fabrication of La0.7Sr0.3MnO3-Si Heterojunctions Using a CMOS-Compatible Citric Acid Etch ProcessRajagopal, R. / Kale, S.N. / Raorane, N.A. / Pinto, R. / Rao, V.R. et al. | 2011
- 402
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Fabrication of $\hbox{La}_{0.7}\hbox{Sr}_{0.3} \hbox{MnO}_{3}$–Si Heterojunctions Using a CMOS-Compatible Citric Acid Etch ProcessRajagopal, Rajashree / Kale, S N / Raorane, N A / Pinto, R / Rao, V Ramgopal et al. | 2011
- 405
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Low-Voltage Organic Nonvolatile Thin-Film Transistor Memory Based on a P(MMA-GMA)–Al–O Complex LayerWei Wang, / Dongge Ma, et al. | 2011
- 408
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Integrated MOSFET-Embedded-Cantilever-Based Biosensor Characteristic for Detection of Anthrax SimulantMostafa, S / Lee, Ida / Islam, S K / Eliza, S A / Shekhawat, G / Dravid, V P / Tulip, F S et al. | 2011
- 411
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Giant Piezoresistance Measured in n-Type Nanothick Si Layer That Has Interface With SiO2Yang, Y. / Li, X. et al. | 2011
- 411
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Giant Piezoresistance Measured in n-Type Nanothick Si Layer That Has Interface With $\hbox{SiO}_{2}$Yongliang Yang, / Xinxin Li, et al. | 2011
- 414
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A Low-Voltage Torsion NanorelayRubin, J / Sundararaman, R / Moonkyung Kim, / Tiwari, S et al. | 2011
- 417
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A Low-Cost Disposable Chemical Sensing Platform Based on Discrete ComponentsProdromakis, Themistoklis / Yan Liu, / Toumazou, Chris et al. | 2011
- 420
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IEEE Electron Devices Society Meetings Calendar for 2011 (As of 01 February 2011)| 2011
- 422
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IEEE Electron Device Letters Information for authors| 2011
- 423
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Special issue on materials, processing and reliability of 3D interconnects| 2011
- 424
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2011 IEEE International Integrated Reliability Workshop| 2011
- 425
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2011 23rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)| 2011
- 426
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37th IEEE Photovoltaic Specialists Conference| 2011
- 427
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Table of contents| 2011
- C2
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IEEE Electron Device Letters publication information| 2011