Simple analytical bulk current model for long-channel double-gate junctionless transistors (English)
- New search for: Duarte, J.P.
- New search for: Choi, Sung-Jin
- New search for: Moon, Dong-Il
- New search for: Choi, Yang-Kyu
- New search for: Duarte, J.P.
- New search for: Choi, Sung-Jin
- New search for: Moon, Dong-Il
- New search for: Choi, Yang-Kyu
In:
Electron Device Letters (IEEE)
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32
, 6
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704-706
;
2011
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ISSN:
- Article (Journal) / Print
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Title:Simple analytical bulk current model for long-channel double-gate junctionless transistors
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Contributors:Duarte, J.P. ( author ) / Choi, Sung-Jin ( author ) / Moon, Dong-Il ( author ) / Choi, Yang-Kyu ( author )
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Published in:Electron Device Letters (IEEE) ; 32, 6 ; 704-706
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Publisher:
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Publication date:2011
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Size:3 Seiten, 12 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 32, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 703
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Changes to the Editorial BoardTaur, Yuan et al. | 2011
- 704
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Simple Analytical Bulk Current Model for Long-Channel Double-Gate Junctionless TransistorsDuarte, J P / Sung-Jin Choi, / Dong-Il Moon, / Yang-Kyu Choi, et al. | 2011
- 707
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TiN Thickness Impact on BTI PerformanceChien Liang Chen, / Ya-Chin King, et al. | 2011
- 710
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Crossbar Logic Using Bipolar and Complementary Resistive SwitchesRosezin, R / Linn, E / Kugeler, C / Bruchhaus, R / Waser, R et al. | 2011
- 713
-
Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- $\kappa$/Metal-Gate nFinFETs for High-Performance Logic ApplicationsMaitra, K / Khakifirooz, A / Kulkarni, P / Basker, V S / Faltermeier, J / Jagannathan, H / Adhikari, H / Chun-Chen Yeh, / Klymko, N R / Saenger, K et al. | 2011
- 713
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Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- Formula Not Shown /Metal-Gate nFinFETs for High-Performance Logic ApplicationsMaitra, K. / Khakifirooz, A. / Kulkarni, P. / Basker, V. S. / Faltermeier, J. / Jagannathan, H. / Adhikari, H. / Yeh, C. C. / Klymko, N. R. / Saenger, K. et al. | 2011
- 716
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Very Low Reset Current for an RRAM Device Achieved in the Oxygen-Vacancy-Controlled RegimeRaghavan, N / Pey, K L / Li, X / Liu, W H / Wu, X / Bosman, M / Kauerauf, T et al. | 2011
- 719
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Reset Instability in Pulsed-Operated Unipolar Resistive-Switching Random Access Memory DevicesNardi, F / Cagli, C / Spiga, S / Ielmini, D et al. | 2011
- 722
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Modeling and Separate Extraction of Gate-Bias- and Channel-Length-Dependent Intrinsic and Extrinsic Source–Drain Resistances in MOSFETsHagyoul Bae, / Jaeman Jang, / Ja Sun Shin, / Daeyoun Yun, / Jieun Lee, / Tae Wan Kim, / Dae Hwan Kim, / Dong Myong Kim, et al. | 2011
- 725
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Junctionless Vertical-Si-Nanowire-Channel-Based SONOS Memory With 2-Bit Storage per CellSun, Y / Yu, H Y / Singh, N / Leong, K C / Lo, G Q / Kwong, D L et al. | 2011
- 728
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CMOS Inverter Based on Schottky Source–Drain MOS Technology With Low-Temperature Dopant SegregationLarrieu, G / Dubois, E et al. | 2011
- 731
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A Floating-Body/Gate DRAM Cell Upgraded for Long Retention TimeZhichao Lu, / Fossum, Jerry G / Zhenming Zhou, et al. | 2011
- 734
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Performance Improvement of a Virtual-Ground Nonvolatile Charge-Trap Storage nor-Type Memory Cell With Optimized Junction Dosage for 45-nm Generation NodeOu, T F / Tzeng, W C / Tsai, C H / Lee, G D / Ku, S H / Liu, C H / Liu, K W / Zous, N K / Huang, S W / Chen, M S et al. | 2011
- 737
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Modeling of Current-Return-Path Effect on Single-Ended Inductor in Millimeter-Wave RegimeHongrui Wang, / Lei Zhang, / Dongxu Yang, / Dajie Zeng, / Yan Wang, / Zhiping Yu, et al. | 2011
- 740
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Impact of NBTI/PBTI on SRAM Stability DegradationBinjie Cheng, / Brown, Andrew R / Asenov, Asen et al. | 2011
- 743
-
Stepped Broken-Gap Heterobarrier Tunneling Field-Effect Transistor for Ultralow Power and High SpeedRegister, L F / Hasan, M M / Banerjee, S K et al. | 2011
- 746
-
Effects of Surface Orientation on the Performance of Idealized III–V Thin-Body Ballistic n-MOSFETsRaseong Kim, / Rakshit, T / Kotlyar, R / Hasan, S / Weber, C E et al. | 2011
- 749
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Enhanced Power and Breakdown in III-N RF Switches With a Slow GateSattu, A / Deng, J / Billingsley, D / Yang, J / Shur, M / Gaska, R / Simin, G et al. | 2011
- 752
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Electrical Characterization of Al2 O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface TreatmentsTrinh, H.D. / Brammertz, G. / Chang, E.Y. / Kuo, C.I. / Lu, C.Y. / Lin, Y.C. / Nguyen, H.Q. / Wong, Y.Y. / Tran, B.T. / Kakushima, K. et al. | 2011
- 752
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Electrical Characterization of Formula Not Shown /n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface TreatmentsTrinh, H. D. / Brammertz, G. / Chang, E. Y. / Kuo, C. I. / Lu, C. Y. / Lin, Y. C. / Nguyen, H. Q. / Wong, Y. Y. / Tran, B. T. / Tran, K. et al. | 2011
- 752
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Electrical Characterization of $\hbox{Al}_{2} \hbox{O}_{3}$/n-InAs Metal–Oxide–Semiconductor Capacitors With Various Surface TreatmentsTrinh, H D / Brammertz, G / Chang, E Y / Kuo, C I / Lu, C Y / Lin, Y C / Nguyen, H Q / Wong, Y Y / Tran, B T / Kakushima, K et al. | 2011
- 755
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245-GHz InAlN/GaN HEMTs With Oxygen Plasma TreatmentDong Seup Lee, / Chung, Jinwook W / Han Wang, / Xiang Gao, / Shiping Guo, / Fay, Patrick / Palacios, Tomás et al. | 2011
- 758
-
High-Performance Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistor With a Self-Aligned Etch Stopper Patterned by Back-Side UV ExposureDi Geng, / Dong Han Kang, / Jin Jang, et al. | 2011
- 761
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Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through Formula Not Shown – Formula Not Shown CharacterizationBae, H. / Kim, S. / Bae, M. / Shin, J. S. / Kong, D. / Jung, H. / Jang, J. / Lee, J. / Kim, D. H. / Kim, D. M. et al. | 2011
- 761
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Extraction of Separated Source and Drain Resistances in Amorphous Indium–Gallium–Zinc Oxide TFTs Through $C$– $V$ CharacterizationHagyoul Bae, / Sungchul Kim, / Minkyung Bae, / Ja Sun Shin, / Dongsik Kong, / Hyunkwang Jung, / Jaeman Jang, / Jieun Lee, / Dae Hwan Kim, / Dong Myong Kim, et al. | 2011
- 764
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Mechanism Analysis of Off-Leakage Current in an LDD Poly-Si TFT Using Activation EnergyNakashima, A / Kimura, M et al. | 2011
- 767
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Improved Uniformity of Sequential Lateral Solidification Thin-Film TransistorsMyung-Koo Kang, / Si Joon Kim, / Hyun Jae Kim, et al. | 2011
- 770
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High-Performance Poly-Si Vertical Nanowire Thin-Film Transistor and the Inverter DemonstrationLe, T T / Yu, H Y / Sun, Y / Singh, N / Zhou, X / Shen, N / Lo, G Q / Kwong, D L et al. | 2011
- 773
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Evidence of a Novel Source of Random Telegraph Signal in CMOS Image SensorsGoiffon, V / Magnan, P / Martin-Gonthier, P / Virmontois, C / Gaillardin, M et al. | 2011
- 776
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Novel Readout Circuit Architecture for CMOS Image Sensors Minimizing RTS NoiseMartin-Gonthier, P / Magnan, P et al. | 2011
- 779
-
Capitalizing on the Glass-Etching Effect of Silver Plating Chemistry to Contact Si Solar Cells With Homogeneous 100–110 Formula Not Shown EmittersEbong, A. / Cooper, I. B. / Rounsaville, B. C. / Rohatgi, A. / Dovrat, M. / Kritchman, E. / Brusilovsky, D. / Benichou, A. et al. | 2011
- 779
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Capitalizing on the Glass-Etching Effect of Silver Plating Chemistry to Contact Si Solar Cells With Homogeneous 100–110 $\Omega/\hbox{sq}$ EmittersEbong, A / Cooper, I B / Rounsaville, B C / Rohatgi, A / Dovrat, M / Kritchman, E / Brusilovsky, D / Benichou, A et al. | 2011
- 782
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Amorphous-Selenium-Based Three-Terminal X-Ray Detector With a GateKai Wang, / Feng Chen, / Allec, N / Fang Yuan, / Belev, G / Kasap, S / Karim, K S et al. | 2011
- 785
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Monolithic Integration of a 4H-Silicon Carbide Vertical JFET and a JBS DiodeRadhakrishnan, R / Zhao, J H et al. | 2011
- 788
-
A SiC Varactor With Large Effective Tuning Range for Microwave Power ApplicationsAndersson, C M / Ejebjork, N / Henry, A / Andersson, S / Janzen, E / Zirath, H / Rorsman, N et al. | 2011
- 791
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Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-Based LDMOS TransistorsPoli, S / Reggiani, S / Denison, M / Gnani, E / Gnudi, A / Baccarani, G / Pendharkar, S / Wise, R et al. | 2011
- 794
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Enhancement of Resistive Switching Characteristics in Formula Not Shown -Based RRAM With Embedded Ruthenium NanocrystalsChen, L. / Gou, H. Y. / Sun, Q. Q. / Zhou, P. / Lu, H. L. / Wang, P. F. / Ding, S. J. / Zhang, D. et al. | 2011
- 794
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Enhancement of Resistive Switching Characteristics in $ \hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM With Embedded Ruthenium NanocrystalsLin Chen, / Hong-Yan Gou, / Qing-Qing Sun, / Peng Zhou, / Hong-Liang Lu, / Peng-Fei Wang, / Shi-Jin Ding, / Zhang, David Wei et al. | 2011
- 797
-
An Indium-Free Transparent Resistive Switching Random Access MemoryZheng, K / Sun, X W / Zhao, J L / Wang, Y / Yu, H Y / Demir, H V / Teo, K L et al. | 2011
- 800
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New Leakage Mechanism and Dielectric Breakdown Layer Detection in Metal-Nanocrystal-Embedded Dual-Layer Memory Gate StackZin Zar Lwin, / Kin Leong Pey, / Raghavan, N / Yining Chen, / Mahapatra, S et al. | 2011
- 803
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Unipolar Resistive Switching Properties of Diamondlike Carbon-Based RRAM DevicesDi Fu, / Dan Xie, / Tingting Feng, / Chenhui Zhang, / Jiebin Niu, / He Qian, / Litian Liu, et al. | 2011
- 806
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Low-Temperature Reflow Anneals of Cu on RuYang, C.-C / McFeely, F R / Li, B / Rosenberg, R / Edelstein, D et al. | 2011
- 809
-
RF Model and Verification of Through-Silicon Vias in Fully Integrated SiGe Power AmplifierHsien-Yuan Liao, / Hwann-Kaeo Chiou, et al. | 2011
- 812
-
Channel-Length-Dependent Transport Behaviors of Graphene Field-Effect TransistorsShu-Jen Han, / Zhihong Chen, / Bol, A A / Yanning Sun, et al. | 2011
- 815
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Scaling and Anisotropic Conduction in Electrochemically Deposited Polypyrrole Hybrid JunctionsPilapil, M A / Pillai, R G / Freund, M S / Jun Hui Zhao, / Thomson, D J et al. | 2011
- 818
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Thermal Sensing With Lithographically Patterned Bimetallic Thin-Film ThermocouplesVarrenti, A R / Chuanle Zhou, / Klock, A G / Chyung, S H / Jieyi Long, / Memik, S O / Grayson, M et al. | 2011
- 821
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Experimental Investigation of a Cavity-Mode Resonator Using a Micromachined Two-Dimensional Silicon Phononic Crystal in a Square LatticeNan Wang, / Tsai, J M / Fu-Li Hsiao, / Soon, B W / Dim-Lee Kwong, / Palaniapan, Moorthi / Chengkuo Lee, et al. | 2011
- 824
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IEEE Electron Devices Society Meetings Calendar for 2011 (As of 05 May 2011)| 2011
- 826
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IEEE Electron Device Letters Information for authors| 2011
- 827
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Special issue of materials processing and reliability of 3D interconnects| 2011
- 828
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2011 IEEE International Electron Devices Meeting (IEDM)| 2011
- 829
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42nd IEEE Semiconductor Interface Specialists Conference| 2011
- 830
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International Conference on Enabling Science and Nanotechnology (ESciNano)| 2011
- 831
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Table of contents| 2011
- C2
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IEEE Electron Device Letters publication information| 2011