Long Wavelength Multiple Resonant Cavities RCE Photodetectors on GaAs Substrates (English)
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- New search for: Duan, Xiaofeng
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In:
IEEE Transactions on Electron Devices
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58
, 11
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3948-3953
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2011
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ISSN:
- Article (Journal) / Print
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Title:Long Wavelength Multiple Resonant Cavities RCE Photodetectors on GaAs Substrates
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Contributors:Duan, Xiaofeng ( author ) / Huang, Yongqing ( author ) / Ren, Xiaomin ( author ) / Wang, Wei ( author ) / Huang, Hui ( author ) / Wang, Qi ( author ) / Cai, Shiwei ( author )
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Published in:IEEE Transactions on Electron Devices ; 58, 11 ; 3948-3953
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Publisher:
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Publication date:2011
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Size:6 Seiten, 20 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 58, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3652
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The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide TrapsGrasser, T. / Kaczer, B. / Goes, W. / Reisinger, H. / Aichinger, T. / Hehenberger, P. / Wagner, P. / Schanovsky, F. / Franco, J. / Luque, María Toledano et al. | 2011
- 3652
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INVITED PAPER - The paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide TrapsGresser, T et al. | 2011
- 3667
-
An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping TechniqueSungho Kim, / Sung-Jin Choi, / Dong-Il Moon, / Yang-Kyu Choi, et al. | 2011
- 3667
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REGULAR PAPERS - Silicon and Column IV Semiconductor Devices - An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping TechniqueKim, S et al. | 2011
- 3674
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Gate-First Metal-Gate/High-$k$ n-MOSFETs With Deep Sub-nm Equivalent Oxide Thickness (0.58 nm) Fabricated With Sulfur-Implanted Schottky Source/Drain Using a Low-Temperature ProcessSuzuki, M. / Nishi, Y. / Kinoshita, A. et al. | 2011
- 3674
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Gate-First Metal-Gate/High- Formula Not Shown n-MOSFETs With Deep Sub-nm Equivalent Oxide Thickness (0.58 nm) Fabricated With Sulfur-Implanted Schottky Source/Drain Using a Low-Temperature ProcessSuzuki, M. / Nishi, Y. / Kinoshita, A. et al. | 2011
- 3678
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A Novel Nanoinjection Lithography (NInL) Technology and Its Application for 16-nm Node Device FabricationHou-Yu Chen, / Chun-Chi Chen, / Fu-Kuo Hsueh, / Jan-Tsai Liu, / Shyi-Long Shy, / Cheng-San Wu, / Chao-Hsin Chien, / Chenming Hu, / Chien-Chao Huang, / Fu-Liang Yang, et al. | 2011
- 3687
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Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part I: Vertical ScalingSchroter, M. / Wedel, G. / Heinemann, B. / Jungemann, C. / Krause, J. / Chevalier, P. / Chantre, A. et al. | 2011
- 3697
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Physical and Electrical Performance Limits of High-Speed Si GeC HBTs—Part II: Lateral ScalingSchroter, M. / Krause, J. / Rinaldi, N. / Wedel, G. / Heinemann, B. / Chevalier, P. / Chantre, A. et al. | 2011
- 3707
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A Statistical Model of Erratic Behaviors in Flash Memory ArraysChimenton, A. / Zambelli, C. / Olivo, P. et al. | 2011
- 3712
-
Analysis of the Correlation Between the Programmed Threshold-Voltage Distribution Spread of nand Flash Memory Devices and Floating-Gate Impurity ConcentrationShirota, R. / Sakamoto, Y. / Hung-Ming Hsueh, / Jian-Ming Jaw, / Wen-Chuan Chao, / Chih-Ming Chao, / Sheng-Fu Yang, / Arakawa, H. et al. | 2011
- 3720
-
On-Chip High-Performance Millimeter-Wave Transmission Lines on Locally Grown Porous Silicon AreasIssa, H. / Ferrari, P. / Hourdakis, E. / Nassiopoulou, A. G. et al. | 2011
- 3725
-
An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene NanoribbonsGoharrizi, Arash Yazdanpanah / Pourfath, M. / Fathipour, M. / Kosina, H. / Selberherr, S. et al. | 2011
- 3736
-
TiN Metal Gate Electrode Thickness Effect on BTI and Dielectric Breakdown in HfSiON-Based MOSFETsChien-Liang Chen, / Ya-Chin King, et al. | 2011
- 3743
-
Electrical Performance Optimization of Nanoscale Double-Gate MOSFETs Using Multiobjective Genetic AlgorithmsBendib, Toufik / Djeffal, Fayçal et al. | 2011
- 3751
-
An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETsBazigos, A. / Bucher, M. / Assenmacher, J. / Decker, S. / Grabinski, W. / Papananos, Y. et al. | 2011
- 3759
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Extended Analysis of Capacitance–Voltage Curves for the Determination of Bulk Dopant Concentrations of Textured Silicon Solar CellsSchütze, M. / Hinken, D. / Milsted, A. / Koentopp, M. B. / Bothe, K. et al. | 2011
- 3771
-
Read Characteristics of Independent Double-Gate Poly-Si Nanowire SONOS DevicesHorng-Chih Lin, / Zer-Ming Lin, / Wei-Chen Chen, / Tiao-Yuan Huang, et al. | 2011
- 3778
-
Mechanism of Contact Resistance Reduction in Nickel Silicide Films by Pt IncorporationSonehara, T. / Hokazono, A. / Akutsu, H. / Sasaki, T. / Uchida, H. / Tomita, M. / Kawanaka, S. / Inaba, S. / Toyoshima, Y. et al. | 2011
- 3787
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Improvement in off-State Leakage Current of n-Channel SOS MOSFETs by Hydrogen Annealing of the SOS FilmDomyo, H. / Imthurn, G. / Tran Ho, / Miscione, A. M. / Rakic, A. D. / Yew-Tong Yeow, et al. | 2011
- 3793
-
Narrow-Width Effects on a Body-Tied Partially Depleted SOI MOSFETValentin, R. / Bertrand, G. / Puget, S. / Scheer, P. / Juge, A. / Jaouen, H. / Raynaud, C. et al. | 2011
- 3801
-
NiGe Contacts and Junction Architectures for P and As Doped Germanium DevicesShayesteh, M. / Daunt, Chris L. L. M. / O'Connell, D. / Djara, V. / White, M. / Long, B. / Duffy, Ray et al. | 2011
- 3808
-
Scaling Between Channel Mobility and Interface State Density in SiC MOSFETsRozen, J. / Ahyi, A. C. / Xingguang Zhu, / Williams, J. R. / Feldman, L. C. et al. | 2011
- 3812
-
Effects of Channel Width and Nitride Passivation Layer on Electrical Characteristics of Polysilicon Thin-Film TransistorsChia-Chun Liao, / Min-Chen Lin, / Tsung-Yu Chiang, / Tien-Sheng Chao, et al. | 2011
- 3820
-
Three-Dimensional Integration Approach to High-Density Memory DevicesHojung Kim, / Sanghun Jeon, / Myoung-Jae Lee, / Jaechul Park, / Sangbeom Kang, / Hyun-Sik Choi, / Churoo Park, / Hong-Sun Hwang, / Changjung Kim, / Jaikwang Shin, et al. | 2011
- 3829
-
Uniaxial Strain Effects on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFETsLining Zhang, / Haijun Lou, / Jin He, / Mansun Chan, et al. | 2011
- 3829
-
Uniaxial Strain Effects on Electron Ballistic Transport in Gate-Ail-Around Silicon Nanowire MOSFETsZhang, L et al. | 2011
- 3837
-
Tri-Mode Independent-Gate FinFETs for Dynamic Voltage/Frequency Scalable 6T SRAMsGupta, S. K. / Park, S. P. / Roy, K. et al. | 2011
- 3847
-
Metal–Oxide–High-$k$ -Oxide–Silicon Memory Device Using a Ti-Doped $\hbox{Dy}_{2}\hbox{O}_{3}$ Charge-Trapping Layer and $\hbox{Al}_{2}\hbox{O}_{3}$ Blocking LayerFa-Hsyang Chen, / Tung-Ming Pan, / Fu-Chien Chiu, et al. | 2011
- 3847
-
Metal–Oxide–High- Formula Not Shown -Oxide–Silicon Memory Device Using a Ti-Doped Formula Not Shown Charge-Trapping Layer and Formula Not Shown Blocking LayerChen, F. H. / Pan, T. M. / Chiu, F. C. et al. | 2011
- 3847
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Metal-Oxide-High-A-Oxide-Silicon Memory Device Using a Ti-Doped Dy2O3 Charge-Trapping Layer and AI2O3 Blocking LayerChen, F-H et al. | 2011
- 3852
-
Contact-Resistance Reduction for Strained n-FinFETs With Silicon–Carbon Source/Drain and Platinum-Based Silicide Contacts Featuring Tellurium Implantation and SegregationShao-Ming Koh, / Kong, E. Y-J / Bin Liu, / Chee-Mang Ng, / Samudra, G. S. / Yee-Chia Yeo, et al. | 2011
- 3863
-
Highly Manufacturable Device Isolation Technology Using Laser-Induced Epitaxial Growth for Monolithic Stack DevicesYong-Hoon Son, / Seung Jae Baik, / Sanghun Jeon, / Jong-Wook Lee, / Gihyun Hwang, / Yoo Gyun Shin, / Euijoon Yoon, et al. | 2011
- 3869
-
Compound Semiconductor Devices - Band Alignment and Performance Improvement Mechanisms of Chlorine-Treated ZnO-Gate AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility TransistorsChiou, Y-L et al. | 2011
- 3869
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Band Alignment and Performance Improvement Mechanisms of Chlorine-Treated ZnO-Gate AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility TransistorsYa-Lan Chiou, / Ching-Ting Lee, et al. | 2011
- 3876
-
Carrier Dynamics Investigation on Passivation Dielectric Constant and RF Performance of Millimeter-Wave Power GaN HEMTsGuerra, D. / Saraniti, M. / Ferry, D. K. / Goodnick, S. M. / Marino, F. A. et al. | 2011
- 3885
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Electrical Characteristics of Ultrathin Atomic Layer Deposited Formula Not Shown and Formula Not Shown Stacked Dielectrics on Formula Not Shown -Treated InPLee, M. K. / Yen, C. F. / Yang, S. H. et al. | 2011
- 3885
-
Electrical Characteristics of Ultrathin Atomic Layer Deposited TiO2 and Al2Oa/TiO2 Stacked Dielectrics on (NH4)2Sx-Treated InPLee, M-K et al. | 2011
- 3885
-
Electrical Characteristics of Ultrathin Atomic Layer Deposited $\hbox{TiO}_{2}$ and $ \hbox{Al}_{2}\hbox{O}_{3}/\hbox{TiO}_{2}$ Stacked Dielectrics on $(\hbox{NH}_{4})_{2}\hbox{S}_{x}$-Treated InPMing-Kwei Lee, / Chih-Feng Yen, / Sheng-Hsiung Yang, et al. | 2011
- 3890
-
A combined interface and border trap model for high-mobility substrate metal-oxide-semiconductor devices applied to In0.53 Ga0.47As and InP capacitorsBrammertz, G. / Alian, A. / Lin, D.H-C. / Meuris, M. / Caymax, M. / Wang, W-E. et al. | 2011
- 3890
-
A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to Formula Not Shown and InP CapacitorsBrammertz, G. / Alian, A. / Lin, D. H. / Meuris, M. / Caymax, M. / Wang, W. E. et al. | 2011
- 3890
-
A Combined Interface and Border Trap Model for High-Mobility Substrate Metal-Oxide-Semiconductor Devices Applied to Ino.53Gao.47As and InP CapacitorsBrammertz, G et al. | 2011
- 3890
-
A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ and InP CapacitorsBrammertz, G. / Alian, A. / Lin, D. H-C / Meuris, M. / Caymax, M. / Wang, W-E et al. | 2011
- 3898
-
Performance of GaAs/Mirror/Cu-Substrate Thin-Film Solar CellsMing-Chun Tseng, / Ray-Hua Horng, / Fan-Lei Wu, / Chih-Hung Wu, / Min-De Yang, et al. | 2011
- 3905
-
Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and TemperatureXiao-Mei Cai, / Sheng-Wei Zeng, / Xin Li, / Jiang-Yong Zhang, / Shuo Lin, / An-Kai Lin, / Ming Chen, / Wen-Jie Liu, / Shao-Xiong Wu, / Bao-Ping Zhang, et al. | 2011
- 3912
-
Understanding the Charge Transport Mechanism in VRS and BRS States of Transition Metal Oxide Nanoelectronic Memristor DevicesLong, Branden / Ordosgoitti, J. / Jha, R. / Melkonian, C. et al. | 2011
- 3912
-
Thin Film Devices - Understanding the Charge Transport Mechanism in VRS and BRS States of Transition Metal Oxide Nanoelectronic Memristor DevicesLong, B et al. | 2011
- 3920
-
A Cost-Effective $\hbox{Ni/Nb}_{2}\hbox{O}_{5}\hbox{/} \hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{Ni}_{2}\hbox{Si}$ Metal–Insulator–Metal Capacitor Processed at 300 $^{\circ}\hbox{C}$ Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom ElectrodeJung-Hsiang Lee, / Yi-Chang Lin, / Ming-Yu Chen, et al. | 2011
- 3920
-
A Cost-Effective Ni/Nb2O5/Al2O3/Ni2Si Metal-Insulator-Metal Capacitor Processed at 300 °C Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom ElectrodeLee, J-H et al. | 2011
- 3920
-
A Cost-Effective Formula Not Shown Metal–Insulator–Metal Capacitor Processed at 300 Formula Not Shown Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom ElectrodeLee, J. H. / Lin, Y. C. / Chen, M. Y. et al. | 2011
- 3920
-
A cost-effective Ni/Nb2O5/Al2O3/Ni2Si metal-insulator-metal capacitor processed at 300 degrees C using laser annealing and a fully silicided amorphous silicon bottom electrodeLee, Jung-Hsiang / Lin, Yi-Chang / Chen, Ming-Yu et al. | 2011
- 3925
-
Substrate Gating of Contact Resistance in Graphene TransistorsBerdebes, D. / Low, T. / Yang Sui, / Appenzeller, J. / Lundstrom, M. S. et al. | 2011
- 3933
-
Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous CarbonYang Chai, / Yi Wu, / Takei, Kuniharu / Hong-Yu Chen, / Shimeng Yu, / Chan, Philip C. H. / Javey, Ali / Wong, H.-S Philip et al. | 2011
- 3940
-
Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage LayerJaeman Jang, / Jae Chul Park, / Dongsik Kong, / Kim, D. M. / Jang-Sik Lee, / Byeong-Hyeok Sohn, / Il Hwan Cho, / Dae Hwan Kim, et al. | 2011
- 3948
-
Optoelectronics, Displays, and Imaging - Long Wavelength Multiple Resonant Cavities RCE Photodetectors on GaAs SubstratesDuan, X et al. | 2011
- 3948
-
Long Wavelength Multiple Resonant Cavities RCE Photodetectors on GaAs SubstratesXiaofeng Duan, / Yongqing Huang, / Xiaomin Ren, / Wei Wang, / Hui Huang, / Qi Wang, / Shiwei Cai, et al. | 2011
- 3954
-
Monolithic 3-D Integration of SRAM and Image Sensor Using Two Layers of Single-Grain SiliconDerakhshandeh, Jaber / Golshani, N. / Ishihara, R. / Tajari Mofrad, Mohammad Reza / Robertson, M. / Morrison, T. / Beenakker, C. I. M. et al. | 2011
- 3962
-
Power Enhancement of 410-nm InGaN-Based Light-Emitting Diodes on Selectively Etched GaN/Sapphire TemplatesTsung-Yen Tsai, / Dong-Sing Wuu, / Ming-Tsung Hung, / Jen-Hung Tu, / Shih-Cheng Huang, / Horng, Ray-Hua / Wei-Yang Chiang, / Li-Wei Tu, et al. | 2011
- 3970
-
White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown BiasChen, H. C. / Chen, M. J. / Huang, Y. H. / Sun, W. C. / Li, W. C. / Yang, J. R. / Kuan, H. / Shiojiri, M. et al. | 2011
- 3976
-
Modeling Quantum Efficiency of Ultraviolet 6H–SiC PhotodiodesPanferov, A. / Kurinec, S. K. et al. | 2011
- 3984
-
UIS Analysis and Characterization of the Inverted L-Shaped Source Trench Power MOSFETNg, J. C. W. / Sin, J. K. O. / Sumida, H. / Toyoda, Y. / Ohi, A. / Tanaka, H. / Nishimura, T. / Ueno, K. et al. | 2011
- 3984
-
Solid-State Power and High Voltage Devices - UIS Analysis and Characterization of the Inverted L-Shaped Source Trench Power MOSFETNg, J C W et al. | 2011
- 3991
-
Solid-State Device Phenomena - Analytical Solution of Joule-Heating Equation for Metallic Single-Walled Carbon Nanotube InterconnectsVerma, R et al. | 2011
- 3991
-
Analytical Solution of Joule-Heating Equation for Metallic Single-Walled Carbon Nanotube InterconnectsVerma, R. / Bhattacharya, S. / Mahapatra, S. et al. | 2011
- 3997
-
Inelastic Phonon Scattering in Graphene FETsChauhan, J. / Jing Guo, et al. | 2011
- 4004
-
Evaluation of Lateral Power MOSFETs in a Synchronous Buck Converter Using a Mixed-Mode Device and Circuit SimulationBoyi Yang, / Jiann-Shiun Yuan, / Shen, Zheng John et al. | 2011
- 4011
-
Perturbation Theory for Solar Cell Efficiency I—Basic PrinciplesWong, J. / Green, M. A. et al. | 2011
- 4016
-
Nanoscale Characterization of Gate Leakage in Strained High-Mobility DevicesKapoor, R. / Escobedo-Cousin, Enrique / Olsen, S. H. / Bull, S. J. et al. | 2011
- 4024
-
Compact Modeling and Analysis of Through-Si-Via-Induced Electrical Noise Coupling in Three-Dimensional ICsChuan Xu, / Suaya, R. / Banerjee, K. et al. | 2011
- 4035
-
Modeling of SOI-LDMOS Transistor Including Impact Ionization, Snapback, and Self-HeatingRadhakrishna, U. / DasGupta, A. / DasGupta, N. / Chakravorty, A. et al. | 2011
- 4042
-
Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an Al-TiW-Pd2Si/n-Si Schottky Device at Two FrequenciesDökme, I et al. | 2011
- 4042
-
Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an $\hbox{Al}{-}\hbox{TiW}{-}\hbox{Pd}_{2}\hbox{Si/n-Si}$ Schottky Device at Two FrequenciesDokme, I. / Altindal, S. et al. | 2011
- 4042
-
Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an Formula Not Shown Schottky Device at Two FrequenciesDokme, I. / Altindal, S. et al. | 2011
- 4049
-
Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency ApplicationsJimenez, D. / Moldovan, O. et al. | 2011
- 4049
-
Molecular and Organic Devices - Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency ApplicationsJiménez, D et al. | 2011
- 4053
-
Gauge Factor Tuning, Long-Term Stability, and Miniaturization of Nanoelectromechanical Carbon-Nanotube SensorsHelbling, T. / Roman, C. / Durrer, L. / Stampfer, C. / Hierold, C. et al. | 2011
- 4061
-
Effect of Solvent Annealing in the Presence of Electric Field on P3HT:PCBM Films Used in Organic Solar CellsBagui, A. / Iyer, S. S. K. et al. | 2011
- 4067
-
Fabrication of a Fractional Order Capacitor With Desired Specifications: A Study on Process Identification and CharacterizationSivarama Krishna, Mulinti / Das, S. / Biswas, K. / Goswami, B. et al. | 2011
- 4074
-
Sensors and Actuators - Piezoresistive Strain Sensors and Multiplexed Arrays Using Assemblies of Single-Crystalline Silicon Nanoribbons on Plastic SubstratesWon, S M et al. | 2011
- 4074
-
Piezoresistive Strain Sensors and Multiplexed Arrays Using Assemblies of Single-Crystalline Silicon Nanoribbons on Plastic SubstratesSang Min Won, / Hoon-Sik Kim, / Nanshu Lu, / Dae-Gon Kim, / Del Solar, Cesar / Duenas, Terrisa / Ameen, Abid / Rogers, John A. et al. | 2011
- 4079
-
Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode With a Simple Surface Roughness ApproachTai-You Chen, / Huey-Ing Chen, / Chien-Chang Huang, / Chi-Shiang Hsu, / Po-Shun Chiu, / Po-Cheng Chou, / Rong-Chau Liu, / Wen-Chau Liu, et al. | 2011
- 4087
-
Vacuum Electron Devices - An Analytical Approach for Obtaining User-Defined Axial Magnetic Field Profile of a PPM Focusing StructureSantra, M et al. | 2011
- 4087
-
An Analytical Approach for Obtaining User-Defined Axial Magnetic Field Profile of a PPM Focusing StructureSantra, M. / Kumar, L. / Balakrishnan, J. et al. | 2011
- 4093
-
Control of the Reflections at the Terminations of a Slow Wave Structure in the Nonstationary Discrete Theory of Excitation of a Periodic WaveguideBernardi, P. / Andre, F. / David, Jean-Francois / Le Clair, A. / Doveil, F. et al. | 2011
- 4098
-
Microfabrication and Characterization of W-Band Planar Helix Slow-Wave Structure With Straight-Edge ConnectionsCiersiang Chua, / Tsai, Julius M. / Aditya, S. / Min Tang, / Soon Wee Ho, / Zhongxiang Shen, / Lei Wang, et al. | 2011
- 4106
-
BRIEFS - Degradation Analysis of p-Type Poly-Si Thin-Film Transistors Using Device SimulationKimura, M et al. | 2011
- 4106
-
Degradation Analysis of p-Type Poly-Si Thin-Film Transistors Using Device SimulationKimura, M. et al. | 2011
- 4111
-
N-Type Porous Silicon Substrates for Integrated RF InductorsCapelle, M. / Billoue, J. / Poveda, P. / Gautier, G. et al. | 2011
- 4115
-
2011 IEEE International Electron Devices Meeting (IEDM)| 2011
- 4115
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ANNOUNCEMENTS - 2011 IEEE International Electron Devices Meeting (IEDM)| 2011
- 4116
-
2012 IEEE International Reliability Physics Symposium (IRPS)| 2011
- 4116
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2012 IEEE International Reliabilty Physics Symposium (IRPS)| 2011
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Table of contents| 2011
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IEEE Transactions on Electron Devices publication information| 2011
- C3
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IEEE Transactions on Electron Devices information for authors| 2011