Implementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide Parameters (English)
- New search for: McMahon, J. Jay
- New search for: Yu, Liang-Chun
- New search for: Fronheiser, Jody
- New search for: Elson, J.T.
- New search for: Kovalec, Roger
- New search for: Kretchmer, Jim
- New search for: Tilak, Vinayak
- New search for: McMahon, J. Jay
- New search for: Yu, Liang-Chun
- New search for: Fronheiser, Jody
- New search for: Elson, J.T.
- New search for: Kovalec, Roger
- New search for: Kretchmer, Jim
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In:
ICSCRM, International Conference on Silicon Carbide and Related Materials, 14
;
797-800
;
2012
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ISSN:
- Conference paper / Print
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Title:Implementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide Parameters
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Contributors:McMahon, J. Jay ( author ) / Yu, Liang-Chun ( author ) / Fronheiser, Jody ( author ) / Elson, J.T. ( author ) / Kovalec, Roger ( author ) / Kretchmer, Jim ( author ) / Tilak, Vinayak ( author )
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Published in:Materials Science Forum ; 717-720 ; 797-800
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Publisher:
- New search for: Trans Tech Publications
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Place of publication:Zürich
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Publication date:2012
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Size:4 Seiten
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source: