Comparison of quantum mechanical methods for the simulation of electronic transport through carbon nanotubes (English)
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In:
Microelectronic Engineering
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106
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100-105
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2013
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ISSN:
- Article (Journal) / Print
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Title:Comparison of quantum mechanical methods for the simulation of electronic transport through carbon nanotubes
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Contributors:
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Published in:Microelectronic Engineering ; 106 ; 100-105
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Publisher:
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Publication date:2013
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Size:6 Seiten, 42 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 106
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Modeling the constitutive and frictional behavior of PTFE flexible stamps for nanoimprint lithographySonne, M.R. / Hattel, J.H. et al. | 2013
- 9
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Structural optimization of the micro-membrane for a novel surface stress-based capacitive biosensorZhang, Wendong / Feng, Hui / Sang, Shengbo / Shi, Qiang / Hu, Jie / Li, Pengwei / Li, Gang et al. | 2013
- 13
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Generation of periodic surface wrinkles using a single layer resin by a repetitive dividing volume (RDV) techniquePark, Sang-Hu / Park, Hee-Jin / Kim, Seong-Jin / Ireland, Peter et al. | 2013
- 21
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Surface microstructuring and protein patterning using hyaluronan derivativesMárquez-Posadas, M.C. / Ramiro, J. / Becher, J. / Yang, Y. / Köwitsch, A. / Pashkuleva, I. / Díez-Ahedo, R. / Schnabelrauch, M. / Reis, R.L. / Groth, T. et al. | 2013
- 27
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Electrochemical migration of Ag nanoink patterns controlled by atmospheric-pressure plasmaKim, Kwang-Seok / Kwon, Young-Tae / Choa, Yong-Ho / Jung, Seung-Boo et al. | 2013
- 33
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Formation of SnAg solder bump by multilayer electroplatingZhao, Qinghua / Chen, Zhuo / Hu, Anmin / Li, Ming et al. | 2013
- 38
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Fabrication and characterization of tunable multiferroic Bi0.7Dy0.3FeO3 based on-chip micro-inductorMandal, M. / Duttagupta, S.P. / Palkar, V.R. et al. | 2013
- 43
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Series resistance study of Schottky diodes developed on 4H-SiC wafers using a contact of titanium or molybdenumShili, K. / Ben Karoui, M. / Gharbi, R. / Abdelkrim, M. / Fathallah, M. / Ferrero, S. et al. | 2013
- 48
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Characterization of imprinted gratings based on transparent materials by transmission scatterometryPietroy, David / Gereige, Issam / Gourgon, Cécile et al. | 2013
- 53
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Selected papers from the 20th European Workshop on Materials for Advanced Metallization 2011Schulz, Stefan E. / Zschech, Ehrenfried et al. | 2013
- 54
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2011 MAM Committee| 2013
- 55
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2011 IITC ORGANIZING COMMITTEE| 2013
- 56
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Investigation of aluminum film properties and microstructure for replacement metal gate applicationHuang, R.P. / Tsai, T.C. / Lin, Welch / Huang, H.F. / Tsai, M.C. / Hsu, H.K. / Hsu, C.M. / Lin, J.F. / Yang, C.L. / Wu, J.Y. et al. | 2013
- 63
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Interface engineering for the TaN/Ta barrier film deposition process to control Ta-crystal growthGerlich, Lukas / Ohsiek, Susanne / Klein, Christoph / Geiß, Mario / Friedemann, Michael / Kücher, Peter / Schmeißer, Dieter et al. | 2013
- 69
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Atomic layer deposition of transition metals for silicide contact formation: Growth characteristics and silicidationKim, Hyungjun et al. | 2013
- 76
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Selective self-assembled monolayer coating to enable Cu-to-Cu connection in dual damascene viasMaestre Caro, A. / Travaly, Y. / Beyer, G. / Tokei, Z. / Maes, G. / Borghs, G. / Armini, S. et al. | 2013
- 81
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Chemisorption of ALD precursors in and on porous low-k filmsVerdonck, P. / Delabie, A. / Swerts, J. / Farrell, L. / Baklanov, M.R. / Tielens, H. / Van Besien, E. / Witters, T. / Nyns, L. / Van Elshocht, S. et al. | 2013
- 85
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Investigation of CH4, NH3, H2 and He plasma treatment on porous low-k films and its effects on resisting moisture absorption and ions penetrationLu, Hai-Sheng / Gottfried, Knut / Ahner, Nicole / Schulz, Stefan / Qu, Xin-Ping et al. | 2013
- 91
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CVD of cobalt–tungsten alloy film as a novel copper diffusion barrierShimizu, Hideharu / Sakoda, Kaoru / Shimogaki, Yukihiro et al. | 2012
- 96
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Reactively sputtered HfO2 and Ba(Zr0.2Ti0.8)O3–HfO2 dielectrics for metal–insulator–metal capacitor applicationsZhang, Li-Feng / Xu, Hui / Zhang, Qiu-Xiang / Ding, Shi-Jin / Zhang, David Wei et al. | 2013
- 100
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Comparison of quantum mechanical methods for the simulation of electronic transport through carbon nanotubesZienert, Andreas / Schuster, Jörg / Gessner, Thomas et al. | 2013
- 106
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Electrical characterization of CNT contacts with Cu Damascene top contactvan der Veen, Marleen H. / Vereecke, Bart / Huyghebaert, Cedric / Cott, Daire J. / Sugiura, Masahito / Kashiwagi, Yusaku / Teugels, Lieve / Caluwaerts, Rudy / Chiodarelli, Nicolò / Vereecken, Philippe M. et al. | 2012
- 112
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Texture characterization of the NiSi film on Si substrateKimura, Hiroshi / Tomita, Ryuji et al. | 2013
- 116
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Stress-induced voiding in nickel silicideFutase, Takuya / Oashi, Toshiyuki / Maeda, Hitoshi / Inaba, Yutaka / Tanimoto, Hisanori et al. | 2013
- 121
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Study of Schottky barrier height modulation for NiSi/Si contact with an antimony interlayerGuo, Xiao / Tang, Yang / Jiang, Yu-Long / Qu, Xin-Ping / Ru, Guo-Ping / Zhang, David Wei / Deduytsche, Davy / Detavernier, Christophe et al. | 2013
- 125
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Decreasing reaction rate at the end of silicidation: In-situ CoSi2 XRD study and modelingDelattre, R. / Simola, R. / Rivero, C. / Serradeil, V. / Perrin-Pellegrino, C. / Thomas, O. et al. | 2013
- 129
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Study of the impact of doping concentration and Schottky barrier height on ohmic contacts to n-type germaniumFirrincieli, A. / Martens, K. / Simoen, E. / Claeys, C. / Kittl, J.A. et al. | 2013
- 132
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Si ohmic contacts on N-type SiC studied by XPSCichoň, Stanislav / Macháč, Petr / Barda, Bohumil / Kudrnová, Marie et al. | 2013
- 139
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Effect of TSV density on local stress concentration: Micro-Raman spectroscopy measurement and Finite Element AnalysisLe Texier, F. / Mazuir, J. / Su, M. / Castagné, L. / Souriau, J.-C. / Liotard, J.-L. / Saadaoui, M. / Inal, K. et al. | 2013
- 144
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Cu passivation for enhanced low temperature (⩽300°C) bonding in 3D integrationLim, D.F. / Wei, J. / Leong, K.C. / Tan, C.S. et al. | 2013
- 144
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Cu passivation for enhanced low temperature (300degreeC) bonding in 3D integrationLim, D. F. / Wei, J. / Leong, K. C. / Tan, C. S. et al. | 2013
- 149
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Effect of direct current stressing to Cu–Cu bond interface imperfection for three dimensional integrated circuitsMade, Riko I / Lan, Peng / Li, Hong Yu / Gan, Chee Lip / Tan, Chuan Seng et al. | 2013
- 155
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On the thermal stability of physically-vapor-deposited diffusion barriers in 3D Through-Silicon Vias during IC processingCivale, Yann / Croes, Kristof / Miyamori, Yuichi / Velenis, Dimitrios / Redolfi, Augusto / Thangaraju, Sarasvathi / Ammel, Annemie Van / Cherman, Vladimir / Plas, Geert Van der / Cockburn, Andrew et al. | 2013
- 160
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Copper electrodeposition into macroporous silicon arrays for through silicon via applicationsDefforge, T. / Coudron, L. / Ménard, O. / Grimal, V. / Gautier, G. / Tran-Van, F. et al. | 2013
- 164
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Highly adhesive electroless barrier/Cu-seed formation for high aspect ratio through-Si viasInoue, Fumihiro / Shimizu, Tomohiro / Miyake, Hiroshi / Arima, Ryohei / Ito, Toshihiko / Seki, Hirofumi / Shinozaki, Yuko / Yamamoto, Tomohiko / Shingubara, Shoso et al. | 2013
- 168
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Microstructural void environment characterization by electron imaging in 45nm technology node to link electromigration and copper microstructureGaland, R. / Brunetti, G. / Arnaud, L. / Rouvière, J.-L. / Clément, L. / Waltz, P. / Wouters, Y. et al. | 2013
- 172
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Adhesion analysis for on-chip interconnect structures by beam bending techniques with optical crack length determinationHentschel, R.L. / Hecker, M. / Hensel, M. / Lehr, M.U. / Breuer, D. et al. | 2013
- 177
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Water uptake of a low-k dielectric film: Combining capacitance and gravimetric measurementsKubasch, C. / Bartha, J. W. et al. | 2013
- 177
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Water uptake of a low-κ dielectric film: Combining capacitance and gravimetric measurementsKubasch, C. / Bartha, J.W. et al. | 2013
- 182
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Nanoindentation for reliability assessment of ULK films and interconnects structuresYeap, Kong Boon / Iacopi, Francesca / Geisler, Holm / Hangen, Ude / Zschech, Ehrenfried et al. | 2012
- 188
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Accelerated lifetime estimation of thermosonic Cu ball bonds on Al metallizationLassnig, A. / Trasischker, W. / Khatibi, G. / Weiss, B. / Nelhiebel, M. / Pelzer, R. et al. | 2013
- 195
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Effectiveness of wafer level test for electromigration wear out reporting in advanced CMOS interconnects reliability assessmentBana, F. / Petitprez, E. / Ney, D. / Arnaud, L. / Wouters, Y. et al. | 2013
- 200
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Comprehensive TDDB lifetime prediction methodology for intrinsic and extrinsic failures in Cu interconnect dielectricsSuzumura, N. / Ogasawara, M. / Makabe, K. / Kamoshima, T. / Ouchi, T. / Furusawa, T. / Murakami, E. et al. | 2013
- 205
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Moisture absorption impact on Cu alloy/low-k reliability during process queue timeTsuchiya, H. / Yokogawa, S. / Kunishima, H. / Kuwajima, T. / Usami, T. / Miura, Y. / Ohto, K. / Fujii, K. / Sakurai, M. et al. | 2013
- 210
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Full reliability study of advanced metallization options for 30nm ½pitch interconnectsCroes, Kristof / Demuynck, Steven / Siew, Yong Kong / Pantouvaki, Marianna / Wilson, Christopher J. / Heylen, Nancy / Beyer, Gerald P. / Tőkei, Zsolt et al. | 2013
- 214
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Dependence of Cu electromigration resistance on selectively deposited CVD Co cap thicknessYang, C.-C. / Baumann, F. / Wang, P.-C. / Lee, S.Y. / Ma, P. / AuBuchon, J. / Edelstein, D. et al. | 2013
- 219
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Author Index| 2013
- IFC
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Inside Front Cover - Editorial Board| 2013
- v
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Table of Contents| 2013