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In the given paper we present the results on data transmission experiments showing the potential of GaN Light Emitting Diode (LED) with 75 µm active area. LED operating at 490 nm has been developed by the group of J.-W Shi from the National Central University in Taoyuan, Taiwan. 1.2 Gbit/s data transmission using None Return to Zero (NRZ) modulation scheme and post-processed decision feed-back equalization (DFE) has been realized over 50 m SI-PMMA-POF link at the bit error ratio (BER) of 10-3. BER of 10-9 could be reached by use of additional forward-error correction (FEC) codes at the cost of the bit rate (BR). The fiber coupling efficiency has been improved by using a 500 µm lens mounted on the LED chip. In comparison with conventional butt-coupled solution we achieved an improvement of 5.3 dB.