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A gated optical multi-channel analyser was used to detect Rayleigh and Raman shifted backscatter in a U.V. grade silica using a pump laser at 337 nm. A distributed temperature sensor has been demonstrated in the U.V. using the temperature dependence of the anti-Stoke to Rayleigh ratio. An electronically gated O.M.A. was used to detect the backscattered signals using a gate width of 14 ns. Temperatures from 293 K to 483 K (20 Cel to 210 Cel) were measured with a spatial resolution to within 0,5 m. The spatial and temperature resolution may be improved by use of a smaller gate width and improved optimisation of the measurement system. Although the feasibility of using U.V. for a distributed temperature sensor has been shown, further work has to be carried out to demonstrate the increase in Raman backscattered power if U.V. wavelengths are used compared to I.R. wavelengths.