Suitability of gap frequencies for the Josephson voltage standard (English)
- New search for: Frank, B.
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- New search for: Frank, B.
- New search for: Meyer, H.G.
In:
Journal of Applied Physics
;
72
, 7
;
2973-2977
;
1992
-
ISSN:
- Article (Journal) / Print
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Title:Suitability of gap frequencies for the Josephson voltage standard
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Additional title:Eignung von Gap-Frequenzen für einen Josephson-Spannungs-Standard
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Contributors:Frank, B. ( author ) / Meyer, H.G. ( author )
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Published in:Journal of Applied Physics ; 72, 7 ; 2973-2977
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Publisher:
-
Publication date:1992
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Size:5 Seiten, 6 Bilder, 31 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 72, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2541
-
On the image brightness of the trench bottom surface in a scanning electron microscopeHarafuji, Kenji / Nomura, Noboru / Kouda, Tatsuro et al. | 1992
- 2549
-
A theoretical model of neutron thermalization in a mediumUhm, Han S. et al. | 1992
- 2556
-
An analytical model for longitudinally pumped continuous‐wave laserHwang, In Heon / Meador, Willard E. et al. | 1992
- 2562
-
Properties of proton exchange waveguides in lithium tantalateMatthews, Paul J. / Mickelson, Alan R. / Novak, Steven W. et al. | 1992
- 2575
-
Implantation of Li+ and Na+ into PbTeSe for current confinement in PbTeSe/PbSnTe ridge waveguide lasersHarton, Austin V. / Fonstad, Clifton G. et al. | 1992
- 2579
-
Hot carriers and the frequency response of quantum well lasersLester, L. F. / Ridley, B. K. et al. | 1992
- 2589
-
Excitation of guided elastic wave modes in hollow cylinders by applied surface tractionsDitri, John J. / Rose, Joseph L. et al. | 1992
- 2598
-
Thermal interface crack problems in dissimilar anisotropic mediaChao, C. K. / Chang, R. C. et al. | 1992
- 2605
-
Numerical simulation of cylindrical converging shocks in solidsHiroe, T. / Matsuo, H. / Fujiwara, K. et al. | 1992
- 2612
-
Cross‐property relations for momentum and diffusional transport in porous mediaTorquato, S. / Kim, In Chan et al. | 1992
- 2620
-
Hydrodynamic analysis of electron motion in the cathode fall using a Monte Carlo simulationDalvie, M. / Farouki, R. T. / Hamaguchi, S. / Surendra, M. et al. | 1992
- 2632
-
The effect of molecular ions on the plasma parameters in a medium pressure rare gas radio frequency discharge positive columnChang, Jen‐Shih / Ichikawa, Y. / Hobson, R. M. / Matsumura, S. / Teii, S. et al. | 1992
- 2638
-
Absolute H‐atom concentration profiles in continuous and pulsed rf dischargesTserepi, Angeliki D. / Dunlop, James R. / Preppernau, Bryan L. / Miller, Terry A. et al. | 1992
- 2644
-
Tungsten etching mechanisms in low‐pressure SF6 plasmaPetri, R. / Henry, D. / Sadeghi, N. et al. | 1992
- 2652
-
Two‐dimensional modeling of electron cyclotron resonance plasma productionYasaka, Yasuyoshi / Fukuyama, Atsushi / Hatta, Akimitsu / Itatani, Ryohei et al. | 1992
- 2659
-
Crystallographic alignment analysis of Nd2Fe14B materials using standard x‐ray powder diffraction spectraMeisner, G. P. / Brewer, E. G. et al. | 1992
- 2665
-
Calorimetric and morphological studies of mechanically alloyed Al‐50 at. % transition metal prepared by the rod‐milling techniqueSherif El‐Eskandarany, M. / Aoki, Kiyoshi / Suzuki, Kenji et al. | 1992
- 2673
-
Defects in low‐temperature electron‐irradiated p‐type siliconNubile, P. / Bourgoin, J. C. / Stievenard, D. / Deresmes, D. / Strobl, G. et al. | 1992
- 2680
-
Discrete conductance fluctuations in silicon emitter junctions due to defect clustering and evidence for structural changes by high‐energy electron irradiation and annealingAndersson, Gert I. / Andersson, Mats O. / Engstro¨m, Olof et al. | 1992
- 2692
-
Site transfer of Si in GaAs after heavy ion MeV implantation and annealingMoore, F. G. / Klein, P. B. / Dietrich, H. B. et al. | 1992
- 2700
-
Deep implantation of nitrogen into GaAs for selective three‐dimensional microstructuringWu¨rfl, Joachim / Miao, Jianmin / Ru¨ck, Dorothee / Hartnagel, Hans L. et al. | 1992
- 2705
-
Laser damage formation in KTiOPO4 and KTiOAsO4 crystals: Grey tracksLoiacono, G. M. / Loiacono, D. N. / McGee, T. / Babb, M. et al. | 1992
- 2713
-
Oxygen precipitation and defects in heavily doped Czochralski siliconWijaranakula, W. et al. | 1992
- 2724
-
Fracture and spall ejecta mass distribution: Lognormal and multifractal distributionsBaker, L. / Giancola, A. J. / Allahdadi, F. et al. | 1992
- 2732
-
An improved method of using sound velocity measurements to determine the Debye temperature of cubic and noncubic materialsWolfenden, A. / Harmouche, M. R. et al. | 1992
- 2739
-
The effect of Si and Cu on the interactions between Al films and a TiW barrier layerChang, Peng‐Heng / Chen, Huei‐Ming / Liu, Hung‐Yu et al. | 1992
- 2743
-
Diffusion barrier properties of TiN films for submicron silicon bipolar technologiesKobeda, E. / Warnock, J. D. / Gambino, J. P. / Brodsky, S. B. / Cunningham, B. / Basavaiah, S. et al. | 1992
- 2749
-
Models for hydrogen permeation in metalsAndrew, P. L. / Haasz, A. A. et al. | 1992
- 2758
-
Direct determination of grain‐boundary and dislocation self‐diffusion coefficients in silver from experiments in type‐C kineticsSommer, J. / Herzig, Chr. et al. | 1992
- 2767
-
Stress‐induced outdiffusion of Be in p+ GaAs prepared by molecular‐beam epitaxyLiu, Biing‐Der / Shieh, Tung‐Ho / Wu, Meng‐Yueh / Chang, Tien‐Chih / Lee, Si‐Chen / Lin, Hao‐Hsiung et al. | 1992
- 2773
-
Measurements of interdiffusion in electrodeposited nickel‐phosphorus multilayersRoss, C. A. / Wu, D. T. / Goldman, L. M. / Spaepen, F. et al. | 1992
- 2781
-
Growth of CdS by atmospheric pressure metalorganic vapor‐phase epitaxy at low temperatureYodo, Tokuo / Tanaka, Shuhei et al. | 1992
- 2791
-
Microhardness and Young’s modulus of diamond and diamondlike carbon filmsSavvides, N. / Bell, T. J. et al. | 1992
- 2797
-
Residual donor and acceptor incorporation in InP grown using trimethylindium and tertiarybutylphosphineWatkins, S. P. / Nissen, M. K. / Haacke, G. / Handler, E. M. et al. | 1992
- 2802
-
Stress cancellation in silicon oxynitride/InP structures obtained by rapid thermal chemical vapor depositionLebland, F. / Licoppe, C. / Nissim, Y. I. et al. | 1992
- 2806
-
A study of group‐V desorption from GaAs and GaP by reflection high‐energy electron diffraction in gas‐source molecular beam epitaxyLiang, B. W. / Tu, C. W. et al. | 1992
- 2810
-
Observation and prediction of first phase formation in binary Cu‐metal thin filmsLi, Jian / Strane, J. W. / Russell, S. W. / Hong, S. Q. / Mayer, J. W. / Marais, T. K. / Theron, C. C. / Pretorius, R. et al. | 1992
- 2817
-
Temperature rise during silicon‐on‐glass recrystallization produced by ac magnetic fieldsHayama, Hiroshi / Saito, Takeshi et al. | 1992
- 2823
-
Real‐time optical characterization of surface acoustic modes of polyimide thin‐film coatingsDuggal, Anil R. / Rogers, John A. / Nelson, Keith A. et al. | 1992
- 2823
-
Real-time optical characterization of surface acoustic modes of polymide thin-film coatingsDuggal, A.R. / Rogers, J.A. / Nelson, K.A. et al. | 1992
- 2840
-
Atomic layer growth of oxide thin films with perovskite‐type structure by reactive evaporationIijima, K. / Terashima, T. / Bando, Y. / Kamigaki, K. / Terauchi, H. et al. | 1992
- 2846
-
Evidence of silicon segregation as a function of arsenic overpressure in GaAs grown by molecular beam epitaxyFatt, Yoon Soon et al. | 1992
- 2850
-
Characterization of GaAs layers grown by low temperature molecular beam epitaxy using ion beam techniquesYu, Kin Man / Kaminska, M. / Liliental‐Weber, Z. et al. | 1992
- 2857
-
A comprehensive defect model for amorphous siliconHata, Nobuhiro / Wagner, Sigurd et al. | 1992
- 2873
-
Separation of the bulk and surface components of recombination lifetime obtained with a single laser/microwave photoconductance techniqueBuczkowski, A. / Radzimski, Z. J. / Rozgonyi, G. A. / Shimura, F. et al. | 1992
- 2879
-
Thermal and electrical properties of copper‐tin and nickel‐tin intermetallicsFrederikse, H. P. R. / Fields, R. J. / Feldman, A. et al. | 1992
- 2883
-
Static field electrical conductivity of dilute fiber suspensionsSturman, Philip C. / McCullough, Roy L. et al. | 1992
- 2889
-
ac transport in amorphous silicon‐nitrogen alloysShimakawa, K. / Wakamatsu, S. / Kojima, M. / Kato, H. / Imai, A. et al. | 1992
- 2895
-
The effect of heat treatment on the SrTiO3 thin films prepared by radio frequency magnetron sputteringNam, Seung‐Hee / Kim, Ho‐Gi et al. | 1992
- 2900
-
Properties of the planar poly(3‐octylthiophene)/aluminum Schottky barrier diodeAssadi, A. / Svensson, C. / Willander, M. / Ingana¨s, O. et al. | 1992
- 2900
-
Properties of the planar poly(3-octylthiophene)/aluminium SchottkyAssadi, A. / Svensson, C. / Willander, M. / Inganäs, O. et al. | 1992
- 2907
-
Electrical surface conductivity in quartz induced by ion implantationMartin, P. / Dufour, M. / Ermolieff, A. / Marthon, S. / Pierre, F. / Dupuy, M. et al. | 1992
- 2912
-
Ballistic pulse propagation in quantum wire waveguides: Toward localization and control of electron wave packets in space and timeHayata, K. / Tsuji, Y. / Koshiba, M. et al. | 1992
- 2919
-
Evaluation of the minority carrier diffusion length and edge surface‐recombination velocity in GaAs p/n solar cellsHakimzadeh, Roshanak / Mo¨ller, Hans J. / Bailey, Sheila G. et al. | 1992
- 2923
-
Gap states in hydrogenated microcrystalline silicon grown by glow discharge techniqueDusane, Suvarna R. et al. | 1992
- 2927
-
Indium doping of CdTe and Cd1−xZnxTe by molecular‐beam epitaxy: Uniformly and planar‐doped layers, quantum wells, and superlatticesBassani, F. / Tatarenko, S. / Saminadayar, K. / Magnea, N. / Cox, R. T. / Tardot, A. / Grattepain, C. et al. | 1992
- 2927
-
Indium doping CdTe and Cd(1-x)Zn(x)Te by molecular-beam epitaxy: Uniformly and planar-doped layers, quantum wells, and superlatticesBassani, F. / Tatarenko, S. / Saminadayar, K. / Magnea, N. / Cox, R.T. / Tardot, A. / Grattepain, C. et al. | 1992
- 2941
-
Anisotropic electrical conduction in GaAs/In0.2Ga0.8As/Al0.3Ga0.7As strained heterostructures beyond the critical layer thicknessHiesinger, P. / Schweizer, T. / Ko¨hler, K. / Ganser, P. / Rothemund, W. / Jantz, W. et al. | 1992
- 2947
-
Water‐related capacitance‐voltage recovery effect in low‐temperature‐annealed chemical vapor deposited phosphosilicate (P glass) filmsLi, S. C. / Murarka, S. P. / Guo, X. S. / Lanford, W. A. et al. | 1992
- 2951
-
Critical current density of high‐quality Bi2Sr2Ca2Cu3Ox thin films prepared by metalorganic chemical‐vapor depositionYamasaki, H. / Endo, K. / Nakagawa, Y. / Umeda, M. / Kosaka, S. / Misawa, S. / Yoshida, S. / Kajimura, K. et al. | 1992
- 2958
-
The critical current of Ag/YBa2Cu3O(7-delta) random bulk compositesCalabrese, J.J. / Dubson, M.A. / Garland, J.C. et al. | 1992
- 2958
-
The critical current of Ag/YBa2Cu3O7−δ random bulk compositesCalabrese, J. J. / Dubson, M. A. / Garland, J. C. et al. | 1992
- 2964
-
Sample size dependence of the critical current density in polycrystalline YBa2Cu3O7−δMatthews, D. N. / Mu¨ller, K.‐H. et al. | 1992
- 2964
-
Sample size dependence of the critical current density in polycrystalline YBa2Cu3O(7-delta)Matthews, D.N. / Müller, K.H. et al. | 1992
- 2969
-
Nb Josephson junction with a Hf/HfN double overlayerMorohashi, Shin’ichi / Imamura, Takeshi / Hasuo, Shinya et al. | 1992
- 2973
-
Suitability of gap frequencies for the Josephson voltage standardFrank, Birgit / Meyer, H. G. et al. | 1992
- 2978
-
The mixing of iron and cobalt during mechnical alloyingBrüning, R. / Samwer, K. / Kuhrt, C. / Schultz, L. et al. | 1992
- 2978
-
The mixing of iron and cobalt during mechanical alloyingBru¨ning, R. / Samwer, K. / Kuhrt, C. / Schultz, L. et al. | 1992
- 2984
-
1H relaxation of H2O enhanced by suspended α‐Fe2O3 particlesJang, E. K. / Yu, I. et al. | 1992
- 2989
-
Magnetic properties of R2F17CN(x)Yang, Ying-chang / Qi Pan / Zhang, Xiao-Dong / Ge, Sen-lin et al. | 1992
- 2989
-
Magnetic properties of R2Fe17CNxYang, Ying‐chang / Pan, Qi / Zhang, Xiao‐dong / Ge, Sen‐lin et al. | 1992
- 2993
-
Kinetics of xerographic discharge by surface charge injectionYoung, Ralph H. et al. | 1992
- 3005
-
Scattering from a conducting surface coated with multilayers of lossy dielectric material (transverse electric polarization)Lin, Chi‐Sen / Yaqoob, M. Tahir et al. | 1992
- 3009
-
Phenomenological analysis of the magnetocrystalline anisotropy of the Co sublattice in some rhombohedral and hexagonal intermetallic structures derived from the CaCu5 unit cellPareti, L. / Solzi, M. / Marusi, G. et al. | 1992
- 3013
-
Very low‐emittance solar selective surfaces using new film structuresZhang, Qi‐Chu / Mills, David R. et al. | 1992
- 3022
-
Low‐temperature transport characteristics of AlGaAs‐GaAs in‐plane‐gated wiresHirayama, Y. / Wieck, A. D. / Ploog, K. et al. | 1992
- 3029
-
Optical and structural characterizations of ZnSe/ZnSSe superlattices grown by metalorganic chemical vapor depositionKuroda, Yasuhide / Suemune, Ikuo / Fujimoto, Masahiro / Fujii, Yoshihisa / Otsuka, Nobuo / Nakamura, Yoshio et al. | 1992
- 3034
-
The quantum efficiency of HgCdTe photodiodes in relation to the direction of illumination and to their geometryRosenfeld, D. / Bahir, G. et al. | 1992
- 3034
-
The quantum efficiency of HgCdTe photodiodes in relatin of the direction of illumination and to their geometryRosenfeld, D. / Bahir, G. et al. | 1992
- 3041
-
Temperature dependent photoluminescent properties of InAsxP1−x/InP strained‐layer quantum wellsStorch, D. R. / Schneider, R. P. / Wessels, B. W. et al. | 1992
- 3046
-
Simple energy balance considerations to compute laser‐induced effects on carbon‐implanted copper substratesSingh, Rajiv K. / Harkness, S. / Qian, F. et al. | 1992
- 3050
-
Electron cyclotron resonance plasma etching of photoresist at cryogenic temperaturesVarhue, Walter / Burroughs, Jeffrey / Mlynko, Walter et al. | 1992
- 3058
-
Photoelectron emission and avalanche electron emission from shallow Si p‐n junctionsGuo, Tailiang et al. | 1992
- 3064
-
Monte Carlo simulations of sputter atom transport in low‐pressure sputtering: The effects of interaction potential, sputter distribution, and system geometryMyers, A. M. / Doyle, J. R. / Ruzic, D. N. et al. | 1992
- 3072
-
Titanium nitride oxidation chemistry: An x‐ray photoelectron spectroscopy studySaha, Naresh C. / Tompkins, Harland G. et al. | 1992
- 3080
-
Copper vapor laser machining of polyimide and polymethylmethacrylate in atmospheric pressure airVentzek, P. L. G. / Gilgenbach, R. M. / Ching, C. H. / Lindley, R. A. / McColl, W. B. et al. | 1992
- 3084
-
Application of disjoining and capillary pressure to liquid lubricant films in magnetic recordingMate, C. Mathew et al. | 1992
- 3091
-
On the influence of thermal history on simple surface reactionsWautelet, M. et al. | 1992
- 3095
-
Complexing in silicon induced by surface reactions: Electron paramagnetic resonance detection of a 6‐platinum clusterHo¨hne, M. / Juda, U. et al. | 1992
- 3102
-
Gas‐phase kinetics during microwave plasma‐assisted diamond deposition: Is the hydrocarbon product distribution dictated by neutral‐neutral interactions?Hsu, Wen L. et al. | 1992
- 3110
-
Characterization of a‐SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x‐ray mask applicationJean, A. / Chaker, M. / Diawara, Y. / Leung, P. K. / Gat, E. / Mercier, P. P. / Pe´pin, H. / Gujrathi, S. / Ross, G. G. / Kieffer, J. C. et al. | 1992
- 3116
-
The effects of density fluctuations in organic coatingsFishman, R. S. / Kurtze, D. A. / Bierwagen, G. P. et al. | 1992
- 3125
-
Reactive ion etching of InP using C2H6/H2/O2Sugimoto, Hiroshi / Ohtsuka, Ken‐ichi / Isu, Toshiro / Tada, Hitoshi / Miura, Takeshi / Shiba, Tetsuo et al. | 1992
- 3125
-
Reactive ion etching on InP using C2H6/H2/O2Sugimoto, Hiroshi / Ohtsuka, Kenichi / Isu, Toshiro / Tada, Hitoshi / Miura, Takeshi / Shiba, Tetsuo et al. | 1992
- 3129
-
Molecular‐beam epitaxial growth and characterization of silicon‐doped AlGaAs and GaAs on (311)A GaAs substrates and their device applicationsLi, W. Q. / Bhattacharya, P. K. / Kwok, S. H. / Merlin, R. et al. | 1992
- 3136
-
Graphite as a substrate for diamond growthDubray, J. J. / Pantano, C. G. / Yarbrough, W. A. et al. | 1992
- 3143
-
Investigation of the oxidation kinetics of C54‐TiSi2 on (001)Si by transmission electron microscopyHuang, G. J. / Chen, L. J. et al. | 1992
- 3150
-
Posthydrogenation of low‐pressure chemical‐vapor‐deposited amorphous silicon using a novel internal lamp system and its application to thin‐film transistor fabricationUchida, Yatsutaka / Deane, Steven C. / Milne, William I. et al. | 1992
- 3155
-
The thermal dissociation of decaborane on Si(111)-(7x7) and doping effects in the near surface regionChen, P. J. / Colaianni, M. L. / Yates, J. T. et al. | 1992
- 3155
-
The thermal dissociation of decaborane on Si(111)‐(7×7) and doping effects in the near surface regionChen, P. J. / Colaianni, M. L. / Yates, J. T. et al. | 1992
- 3161
-
Effect of a polymer network on the alignment and the rotational viscosity of a nematic liquid crystalJa´kli, A. / Kim, D. R. / Chien, L. C. / Saupe, A. et al. | 1992
- 3165
-
Thermal annealing properties of Nb‐Al/AlOx‐Nb tunnel junctionsLehnert, T. / Billon, D. / Grassl, C. / Gundlach, K. H. et al. | 1992
- 3169
-
Epitaxial regrowth of n+ and p+ polycrystalline silicon layers given single and double diffusionsWilliams, J. D. / Ashburn, P. et al. | 1992
- 3179
-
Model studies of long Josephson junction arrays coupled to a high‐Q resonatorFilatrella, G. / Rotoli, G. / Gro&slash;nbech‐Jensen, N. / Parmentier, R. D. / Pedersen, N. F. et al. | 1992
- 3186
-
Photocurrent multiplication in a hydrogenated amorphous silicon‐based p‐i‐n junction with an a‐SiN:H layerYoshimi, M. / Ishiko, T. / Hattori, K. / Okamoto, H. / Hamakawa, Y. et al. | 1992
- 3194
-
Current‐frequency characteristics of submicrometer GaAs Schottky barrier diodes with femtofarad capacitanceRoeser, H. P. / Titz, R. U. / Schwaab, G. W. / Kimmitt, M. F. et al. | 1992
- 3198
-
Hole capture at the DX(Si) and DX(Te) defects in AlxGa1−xAsDobaczewski, L. / Kaczor, P. / Z˙ytkiewicz, Z. R. / Missous, M. / Saleemi, F. / Dawson, P. / Peaker, A. R. et al. | 1992
- 3201
-
Slit morphology of electromigration induced open circuit failures in fine line conductorsSanchez, John E. / McKnelly, L. T. / Morris, J. W. et al. | 1992
- 3204
-
‘‘Walls’’ of a paramagnetic gas in a magnetic field gradientFreeman, Gordon R. et al. | 1992
- 3206
-
Oxidation state of Cu ions in H‐charged YBa2Cu3O7−δ filmsBalogh, A. G. / Jaegermann, W. / Briere, M. A. / Stritzker, B. / Zander, W. et al. | 1992
- 3209
-
Wannier localization in GaAs/GaAlAs superlattices under electric fieldZhang, Yaohui / Jiang, Desheng / Li, Feng / Zhou, Junming / Mei, Xiaobing et al. | 1992
- 3212
-
High‐power InGaAs‐GaAs strained quantum well lasers with InGaP cladding layers on p‐type GaAs substratesSin, Y. K. / Horikawa, H. / Kamijoh, T. et al. | 1992
- 3215
-
Tunneling between a two‐dimensional electron gas and a two‐dimensional hole gasJorke, H. et al. | 1992
- 3218
-
Exciton binding energy as a function of the well widthHrivna´k, Lˇ. et al. | 1992
- 3220
-
Dependence of intrinsic stress in hydrogenated amorphous silicon on excitation frequency in a plasma‐enhanced chemical vapor deposition processDutta, Joydeep / Kroll, Ulrich / Chabloz, Patrick / Shah, Arvind / Howling, A. A. / Dorier, J.‐L. / Hollenstein, Ch. et al. | 1992
- 3223
-
Erratum: ‘‘Optical constants of AlxGa1−xAs’’ [J. Appl. Phys. 68, 1848 (1990)]Jenkins, David W. et al. | 1992
- 3224
-
Erratum: ‘‘Phosphorus diffusion into silicon from a spin‐on source using rapid thermal processing’’ [J. Appl. Phys. 71, 5474 (1992)]Hartiti, B. / Slaoui, A. / Muller, J. C. / Stuck, R. / Siffert, P. et al. | 1992
- 3225
-
Erratum: ‘‘Laser‐projection‐patterned etching of GaAs in a chlorine atmosphere’’ [J. Appl. Phys. 71, 2898 (1992)]Foulon, F. / Green, Mino / Goodall, F. N. / De Unamuno, S. et al. | 1992