Enhanced tunability of asymmetric three-section InGaAsP/InP distributed feedback lasers (English)
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In:
Journal of Applied Physics
;
73
, 3
;
1035-1038
;
1993
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ISSN:
- Article (Journal) / Print
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Title:Enhanced tunability of asymmetric three-section InGaAsP/InP distributed feedback lasers
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Additional title:Erweiterte Absimmbarkeit von InGaAsP/InP-Lasern mit verteilter Rückkopplung und drei asymmetrischen Bereichen
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Contributors:
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Published in:Journal of Applied Physics ; 73, 3 ; 1035-1038
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Publisher:
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Publication date:1993
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Size:4 Seiten, 4 Bilder, 15 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 73, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1011
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Effect of temperature gradient on concentration profile of hydrogen in a palladium latticeLee, W. M. / Uhm, Han S. et al. | 1993
- 1018
-
Resolution in collection‐mode scanning optical microscopyBuckland, E. L. / Moyer, P. J. / Paesler, M. A. et al. | 1993
- 1029
-
Phase matching retracing behavior for second harmonic generation in LiB3O5 crystalLin, Shujie / Wu, Baichang / Xie, Fali / Chen, Chuangtian et al. | 1993
- 1035
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Enhanced tunability of asymmetric three‐section InGaAsP/InP distributed feedback lasersHillmer, H. / Zhu, H.‐L / Burkhard, H. et al. | 1993
- 1039
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Thermal shock cleavage of silicon (111) thin crystalsSavage, T. S. / Xu, P. / Marks, L. D. et al. | 1993
- 1043
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Enhanced optical properties of metal‐coated nanoparticlesHaus, Joseph W. / Zhou, H. S. / Takami, S. / Hirasawa, M. / Honma, I. / Komiyama, H. et al. | 1993
- 1049
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Pump and signal cross saturation in cw dye lasersCasperson, Lee W. / Wilson, A. C. / Sandle, W. J. et al. | 1993
- 1057
-
Light scattering from a dispersion of aligned nematic dropletsWhitehead, J. B. / Z˘umer, S. / Doane, J. W. et al. | 1993
- 1066
-
Laser‐induced surface heatingBartholomeusz, Brian J. et al. | 1993
- 1073
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Relaxation phenomena after laser‐induced photodetachment in electronegative rf dischargesPasschier, J. D. P. / Goedheer, W. J. et al. | 1993
- 1080
-
Radially dependent solutions of Boltzmann’s equation in low‐temperature plasmas using a modified two‐term expansionHartig, Michael J. / Kushner, Mark J. et al. | 1993
- 1091
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Multistage plasma initiation process by pulsed CO2 laser irradiation of a Ti sample in an ambient gas (He, Ar, or N2)Hermann, J. / Boulmer‐Leborgne, C. / Mihailescu, I. N. / Dubreuil, B. et al. | 1993
- 1100
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Spontaneous alloying of copper atoms into gold clusters at reduced temperaturesYasuda, H. / Mori, H. / Komatsu, M. / Takeda, K. et al. | 1993
- 1104
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Formation of epitaxial b-FeSi2 films on Si(001) as studied by mediumenergy ion scatteringKonuma, K. et al. | 1993
- 1104
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Formation of epitaxial β‐FeSi2 films on Si(001) as studied by medium‐energy ion scatteringKonuma, K. / Vrijmoeth, J. / Zagwijn, P. M. / Frenken, J. W. M. / Vlieg, E. / van der Veen, J. F. et al. | 1993
- 1110
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Trapped‐hole centers in irradiated Li3VO4Murata, Takuya / Miki, Toshikatsu et al. | 1993
- 1114
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Point defects in lithium triborate (LiB3O5) crystalsScripsick, M. P. / Fang, X. H. / Edwards, G. J. / Halliburton, L. E. / Tyminski, J. K. et al. | 1993
- 1119
-
Transient charging current in nematic liquid crystalsNaito, Hiroyoshi / Yoshida, Kazuyuki / Okuda, Masahiro / Sugimura, Akihiko et al. | 1993
- 1126
-
MeV energy Fe and Co implants to obtain buried high resistance layers and to compensate donor implant tails in InPVellanki, Jayadev / Nadella, Ravi K. / Rao, Mulpuri V. / Holland, O. W. / Simons, David S. / Chi, Peter H. et al. | 1993
- 1133
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Buried SiO2 layer formation in Si with an MeV O ion beamEllingboe, S. / Ridgway, M. C. / Schultz, P. J. et al. | 1993
- 1133
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Burried SiO2 layer formation in Si with an MeV O ion beamEllingboe, S. / Ridgway, M.C. / Schultz, P.J. et al. | 1993
- 1139
-
An elementary paradigm for nonequilibrium diffusionLever, R. F. / Morehead, F. F. et al. | 1993
- 1143
-
The stability of zinc oxide electrodes fabricated by dual ion beam sputteringValentini, Antonio / Quaranta, Fabio / Penza, Michele / Rizzi, Federica R. et al. | 1993
- 1146
-
Observation of activation of Li atoms in ZnSe by photoluminescenceZhu, Ziqiang / Mori, Hiroshi / Yao, Takafumi et al. | 1993
- 1151
-
Sectional structures and electrical properties of ultrathin NbN/MgO bilayers on Si(100)Ishiguro, Takashi / Matsushima, Kazuo / Hamasaki, Katsuyoshi et al. | 1993
- 1154
-
X‐ray double‐crystal analysis of misorientation and strain in GaAs/Si and related heterostructuresFatemi, M. / Chaudhuri, J. / Mittereder, J. / Christou, A. et al. | 1993
- 1161
-
Study of the compositional control of the antimonide alloys InGaSb and GaAsSb grown by metalorganic molecular beam epitaxyItani, Y. / Asahi, H. / Kaneko, T. / Okuno, Y. / Gonda, S. et al. | 1993
- 1168
-
Growth of intermediate phases in Co/Si diffusion couples: Bulk versus thin‐film studiesJan, Chia‐Hong / Chen, Chia‐Ping / Chang, Y. Austin et al. | 1993
- 1180
-
Characterization of Ca1−xErxF2+x solid solution thin films grown on Si(100) substratesBarrie`re, A. S. / Mombelli, B. / Porte´, B. / Raoux, S. / Gue´gan, H. / Re´au, M. / L’Haridon, H. / Moutonnet, D. et al. | 1993
- 1180
-
Characterization of Ca(1-x)Er(x)F(2+x) solid solution thin films growth on Si(100) substratesBarriere, A.S. / Mombelli, B. / Porte, B. / Raoux, S. / Guegan, H. / Reau, M. / L'Haridon, H. / Moutonnet, D. et al. | 1993
- 1187
-
Residual strain measurements in thick In(x)Ga(1-x)As layers grown GaAs (100) by molecular beam epitaxyWestwood, D.I. / Woolf, D.A. et al. | 1993
- 1187
-
Residual strain measurements in thick InxGa1−xAs layers grown on GaAs (100) by molecular beam epitaxyWestwood, D. I. / Woolf, D. A. et al. | 1993
- 1193
-
The effect of excitons on apparent band gap narrowing and transport in semiconductorsKane, D. E. / Swanson, R. M. et al. | 1993
- 1198
-
Magnetic forces for type II superconductors in a levitation fieldTorng, Terry / Chen, Q. Y. et al. | 1993
- 1205
-
Valence energy‐band structure for strained group‐IV semiconductorsManku, T. / Nathan, A. et al. | 1993
- 1214
-
Intrinsic carrier concentration and minority‐carrier mobility of silicon from 77 to 300 KSproul, A. B. / Green, M. A. et al. | 1993
- 1226
-
A Monte Carlo method for study of Auger recombination effects in semiconductorsLui, Wayne W. / Yoshikuni, Yuzo / Yamanaka, Takayuki / Yokoyama, Kiyoyuki et al. | 1993
- 1235
-
Femtosecond spectroscopic study of ultrafast carrier relaxation in hydrogenated amorphous silicon a‐Si:HEsser, A. / Heesel, H. / Kurz, H. / Wang, C. / Parsons, G. N. / Lucovsky, G. et al. | 1993
- 1240
-
Bounds to the conductivity of some two‐component compositesHelsing, Johan et al. | 1993
- 1246
-
Delayed collection field experiment in amorphous arsenic triselenideNaito, Hiroyoshi / Okuda, Masahiro et al. | 1993
- 1252
-
The thermoelectric properties and crystallography of Bi‐Sb‐Te‐Se thin films grown by ion beam sputteringNoro, H. / Sato, K. / Kagechika, H. et al. | 1993
- 1261
-
Analyses of photodischarges induced by bulk generationChen, Inan et al. | 1993
- 1266
-
Investigation of near interface properties in semi‐insulating InP substrates with epitaxial grown InGaAs and InAlAs by photoreflectanceZhou, Weimin / Dutta, M. / Shen, H. / Pamulapati, J. / Bennett, Brian R. / Perry, Clive H. / Weyburne, David W. et al. | 1993
- 1272
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Analysis of GaAs Schottky/tunnel metal–insulator–semiconductor diode characteristics based on an interfacial layer modelIkoma, Hideaki / Ishida, Toshiki / Sato, Kenji / Ishikawa, Toshifumi / Maeda, Keiji et al. | 1993
- 1279
-
Thermal oxidation and electrical properties of silicon carbide metal‐oxide‐semiconductor structuresSingh, N. / Rys, A. et al. | 1993
- 1284
-
Barrier height lowering of Schottky contacts on AlInAs layers grown by metal‐organic chemical‐vapor depositionFujita, Shinobu / Naritsuka, Shigeya / Noda, Takao / Wagai, Aki / Ashizawa, Yasuo et al. | 1993
- 1284
-
Barrier height lowering of Schottky contacts on AllnAs layers grown by metal-organic chemical-vapor depositionFujita, Shinobu et al. | 1993
- 1288
-
Doping and residual impurities in GaAs layers grown by close‐spaced vapor transportLe Bel, C. / Cossement, D. / Dodelet, J. P. / Leonelli, R. / DePuydt, Y. / Bertrand, P. et al. | 1993
- 1297
-
Ultimate accuracy of single‐electron dc current standardsAverin, D. V. / Odintsov, A. A. / Vyshenskii, S. V. et al. | 1993
- 1309
-
Energy splitting of the EL2 level in Si‐implanted GaAs/GaAs by field‐effect deep‐level transient spectroscopyHalder, N. C. / Misra, V. et al. | 1993
- 1315
-
Temperature dependence of Schottky barrier heights on siliconWerner, Ju¨rgen H. / Gu¨ttler, Herbert H. et al. | 1993
- 1320
-
Deceleration of magnetic dipoles interacting with YBa2Cu3Ox superconductorsKuze, Hiroaki / Tachikawa, Maki / Onae, Atsushi et al. | 1993
- 1327
-
Superconductivity in transparent Sn‐doped In2O3 filmsMori, Natsuki et al. | 1993
- 1327
-
Superconductivity in transparent S-doped In2O3 filmsMori, Natsuki et al. | 1993
- 1339
-
Aging of superconducting Y1Ba2Cu3O7−x structures on siliconCopetti, C. A. / Schubert, J. / Zander, W. / Soltner, H. / Poppe, U. / Buchal, Ch. et al. | 1993
- 1343
-
Enhanced flux‐line pinning in Bi2Sr2CaCu2Ox by neutron irradiation and Li(n,3T)α reaction‐induced charged‐particle defectsSchwartz, Justin / Wu, Shiming et al. | 1993
- 1343
-
Enhanced flux-line pinning in Bi2Sr2CaCu2O(x) by neutron irradiation and Li(n, 3T) alpha reaction-induced charged-particle defectsSchwartz, J. / Wu, Shiming et al. | 1993
- 1343
-
Enhanced flux-line pinning in Bi2Sr2CaCu2Ox by neutron irradiation and Li(n,3T)a reaction-induced charged-particle defectsSchwartz, Justin et al. | 1993
- 1348
-
On the origin of ferromagnetism in Mn‐Al multilayered filmsHirayama, Y. / Takeuchi, T. / Futamoto, M. et al. | 1993
- 1348
-
On the origin of ferromagnetism in Mn-AI multilayered filmsHirayama, Y. et al. | 1993
- 1353
-
Remanent magnetic measurements on perpendicular recording materials with compensation for demagnetizing fieldsSamwel, E. O. / Bissell, P. R. / Lodder, J. C. et al. | 1993
- 1360
-
Local structural and polar Kerr effect measurements on an ultrathin epitaxial Co wedge grown on Pd(111)Purcell, S. T. / Johnson, M. T. / McGee, N. W. E. / de Vries, J. J. / Zeper, W. B. / Hoving, W. et al. | 1993
- 1368
-
Measurement of magnetic anisotropy constant for magneto‐optical recording media: A comparison of several techniquesWu, Te‐ho / Fu, Hong / Hajjar, R. A. / Suzuki, T. / Mansuripur, M. et al. | 1993
- 1377
-
The initial magnetization curve after alternating current demagnetizationSeeck, St. / Lambeck, M. et al. | 1993
- 1380
-
Investigation of magnetic, magnetomechanical, and electrical properties of the Tb0.27Dy0.73Fe2−xCox systemDhilsha, K. R. / Rama Rao, K. V. S. et al. | 1993
- 1386
-
Frequency‐dependent complex permeability in rare earth‐substituted cobalt/nonmagnetic transition metal soft ferromagnetic amorphous thin filmsRussat, J. / Suran, G. / Ouahmane, H. / Rivoire, M. / Sztern, J. et al. | 1993
- 1390
-
Antipolarity domain nucleation and growth during heat treatment of proton‐exchanged LiTaO3Nakamura, Kiyoshi / Hosoya, Masahiko / Tourlog, Ailie et al. | 1993
- 1395
-
Theory of ferroelectric‐paraelectric transitions in VF2/F4E random copolymersZhang, Renshi / Taylor, P. L. et al. | 1993
- 1395
-
Theory of ferroelectric-paraelectric transition in VF2/F4E random copolymersZhang, Renshi / Taylor, P.L. et al. | 1993
- 1403
-
Characterization of the performance of 1–3 type piezocomposites for low‐frequency applicationsZhang, Q. M. / Cao, Wenwu / Wang, H. / Cross, L. E. et al. | 1993
- 1411
-
Characteristic dispersion frequencies of resonance type soft mode system of lead titanium oxide in far infraredGupta, Tapan K. / Permbhusri, Kulapat et al. | 1993
- 1415
-
Characteristics and origin of the 1.681 eV luminescence center in chemical‐vapor‐deposited diamond filmsFeng, Tom / Schwartz, Bradley D. et al. | 1993
- 1426
-
Variation of the refractive index and polarizability of sapphire under high pressuresBalzaretti, N. M. / Denis, J. P. / da Jornada, J. A. H. et al. | 1993
- 1430
-
High resolution carrier temperature and lifetime topography of semi‐insulating GaAs using spatially and spectrally resolved photoluminescenceWang, Z. M. / Windscheif, J. / As, D. J. / Jantz, W. et al. | 1993
- 1435
-
Excitation efficiency in thin‐film electroluminescent devices: Probe layer measurementsBenoit, J. / Barthou, C. / Benalloul, P. et al. | 1993
- 1443
-
The low‐temperature photochromic response of bismuth silicon oxideHart, D. W. / Hunt, C. A. / Hunt, D. D. / Martin, J. J. / Harris, Meckie T. / Larkin, John J. et al. | 1993
- 1449
-
An amorphous silicon alloy stable under solar illuminationLin, G. H. / He, M. Z. / Bockris, J. O’M. et al. | 1993
- 1455
-
Low‐temperature copper etching via reactions with Cl2 and PEt3 under ultrahigh vacuum conditionsFarkas, J. / Chi, K.‐M. / Hampden‐Smith, M. J. / Kodas, T. T. / Dubois, L. H. et al. | 1993
- 1461
-
A closed form analytic model for separation by implantation of oxygen oxide growth using a joined‐Gaussian approximationHosack, H. H. / El‐Ghor, M. K. / Hollingsworth, J. / Joyner, K. et al. | 1993
- 1471
-
Heat transfer in a microelectronics plasma reactorDaviet, J.‐F. / Peccoud, L. / Mondon, F. et al. | 1993
- 1480
-
Coherent millimeter‐wave generation by heterodyne conversion in low‐temperature‐grown GaAs photoconductorsBrown, E. R. / Smith, F. W. / McIntosh, K. A. et al. | 1993
- 1485
-
Analysis and design of microwave amplifiers employing field‐emitter arraysCalame, J. P. / Gray, H. F. / Shaw, J. L. et al. | 1993
- 1505
-
Highly selective etching of polycrystalline silicon on silicon dioxide at low wafer temperature, employing magnetron plasmaSekine, Makoto / Horioka, Keiji / Arikado, Tsunetoshi / Okano, Haruo et al. | 1993
- 1509
-
A novel quantum wire formed by lateral p–n–p junctions between quasi‐two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfacesHarbury, Henry K. / Porod, Wolfgang / Goodnick, Stephen M. et al. | 1993
- 1521
-
Nonequilibrium phase transformation and magnetic properties of Ni3Sn2 during mechanical millingZhou, G. F. / Di, L. M. / Bakker, H. et al. | 1993
- 1528
-
Energy transfer in Tm:Eu codoped fluorozirconate fiberTohmon, Genji / Sato, Hisanao / Ohya, Jun / Fujita, Toshihiro et al. | 1993
- 1531
-
High responsivity YBa2Cu3O7−x microbolometers with fast response timesLi, Kin / Johnson, Joseph E. / Aker, Bruce W. et al. | 1993
- 1534
-
High-amplitude photoemission oscillation of highly As-rich GaAs (001) 2x4-g phase during molecular beam epitaxyTsuda, Hiroshi et al. | 1993
- 1534
-
High‐amplitude photoemission oscillation of highly As‐rich GaAs (001) 2×4‐γ phase during molecular beam epitaxyTsuda, Hiroshi et al. | 1993
- 1534
-
High-amplitude photoemission oscillation of highly As-rich GaAs (001) 2 x 4-gamma phase during molecular beam epitaxyTsuda, H. et al. | 1993
- 1537
-
An improved space‐dependent‐mass Hamiltonian for use in the tight‐binding Green’s function methodHenrickson, Lindor E. et al. | 1993
- 1539
-
Second harmonic generation as a sensitive technique for estimating Hc1 of high Tc materialsKumar, Shailendra / Roy, S. B. / Pradhan, A. K. / Chaddah, P. / Prasad, Ram / Soni, N. C. et al. | 1993
- 1542
-
Experimental demonstration of resonant interband tunnel diode with room temperature peak‐to‐valley current ratio over 100Day, D. J. / Yang, Rui Q. / Lu, Jian / Xu, J. M. et al. | 1993
- 1545
-
A simple accurate expression of the reduced Fermi energy for any reduced carrier densityVan Cong, H. / Debiais, G. et al. | 1993
- 1547
-
Structural properties of BaTiO3 thin films on Si grown by metalorganic chemical vapor depositionYoon, Y. S. / Kang, W. N. / Shin, H. S. / Yom, S. S. / Kim, T. W. / Lee, Jong Yong / Choi, D. J. / Baek, S‐S. et al. | 1993
- 1550
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Monolithic integration of glass waveguides with semiconductor lasersWu, MingCho / Chen, Yung Jui / Fitz, John et al. | 1993
- 1553
-
CUMULATIVE AUTHOR INDEX| 1993