An InP-based optothyristor for pulsed power-switching applications (English)
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In:
Electron Device Letters (IEEE)
;
14
, 3
;
140-142
;
1993
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ISSN:
- Article (Journal) / Print
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Title:An InP-based optothyristor for pulsed power-switching applications
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Additional title:Ein InP-Basis-Optothyristor für Impulsleistungsschaltung
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Contributors:Zhao, J.H. ( author ) / Lis, R. ( author ) / Coblentz, D. ( author ) / Illan, J. ( author ) / McAfee, S. ( author ) / Burke, T. ( author ) / Weiner, M. ( author ) / Buchwald, W. ( author ) / Jones, K.A. ( author )
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Published in:Electron Device Letters (IEEE) ; 14, 3 ; 140-142
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Publisher:
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Publication date:1993
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Size:3 Seiten, 4 Bilder, 6 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 14, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 97
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N-channel Si/SiGe MODFETs: effects of rapid thermal activation on the DC performanceKonig, U. / Boers, A.J. / Schaffler, F. et al. | 1993
- 97
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N-Channel Si/SiGe MODFET's: Efects of Rapid Thermal Activation on the DC PerformanceKoenig, U. / Boers, A. J. / Schaeffler, F. et al. | 1993
- 100
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Metal Base Transistor of In/Bi(Ba, Rb)O~3/SrTiO~3(Nb)Abe, H. / Toda, F. / Ogiwara, M. et al. | 1993
- 100
-
Metal base transistor of In/Bi(Ba,Rb)O/sub 3//SrTiO/sub 3/ (Nb)Abe, H. / Toda, F. / Ogiwara, M. et al. | 1993
- 103
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Dead-space effects under near-breakdown conditions in AlGaAs/GaAs HBT'sDe Carlo, A. / Lugli, P. et al. | 1993
- 107
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On the geometric component of charge-pumping current in MOSFETsVan den Bosch, G. / Groeseneken, G. / Maes, H.E. et al. | 1993
- 110
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New effects of modified illumination in optical lithographyAsai, S. / Hanyu, I. / Takikawa, M. et al. | 1993
- 113
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Electrical Characteristics of Textured Polysilicon Oxide Prepared by a Low-Temperature Wafer Loading and N~2 Preannealing ProcessWu, S. L. / Lin, T. Y. / Lee, C. L. / Lei, T. F. et al. | 1993
- 113
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Electrical characteristics of textured polysilicon oxide prepared by a low-temperature wafer loading and N/sub 2/ preannealing processShye Lin Wu, / Ta Yow Lin, / Chung Len Lee, / Tai Fu Lei, et al. | 1993
- 115
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H~2/O~2 Plasma on Polysilicon Thin-Film TransistorChern, H. N. / Lee, C. L. / Lei, T. F. et al. | 1993
- 115
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H/sub 2//O/sub 2/ plasma on polysilicon thin-film transistorHorng Nan Chern, / Chung Len Lee, / Tan Fu Lei, et al. | 1993
- 118
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Tin oxide gas sensor fabricated using CMOS micro-hotplates and in-situ processingSuehle, J.S. / Cavicchi, R.E. / Gaitan, M. / Semancik, S. et al. | 1993
- 121
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200 nm gated field emittersHuang, Z. / McGruer, N.E. / Warner, K. et al. | 1993
- 123
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Rapid Thermal Annealing Effects on Si p^+-n Junctions Fabricated by Low-Energy FIB Ga^+ ImplantationMogul, H. C. / Steckl, A. J. et al. | 1993
- 123
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Rapid thermal annealing effects on Si p/sup +/-n junctions fabricated by low-energy FIB Ga/sup +/ implantationMogul, H.C. / Steckl, A.J. et al. | 1993
- 126
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GaAs~xSb~1~-~x/In~yAl~1~-~yAs p-Channel Heterostructure FET's with High Transconductance and Low Gate Leakage CurrentMartinez, M. J. / Schuermeyer, F. L. / Stutz, C. E. et al. | 1993
- 126
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GaAs/sub x/Sb/sub 1-x//In/sub y/Al/sub 1-y/As p-channel heterostructure FETs with high transconductance and low gate leakage currentMartinez, M.J. / Schuermeyer, F.L. / Stutz, C.E. et al. | 1993
- 129
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A new damascene structure for submicrometer interconnect wiringJoshi, R.V. et al. | 1993
- 133
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Linear dynamic self-heating in SOI MOSFETsCaviglia, A.L. / Iliadis, A.A. et al. | 1993
- 136
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Greatly improved 3C-SiC p-n junction diodes grown by chemical vapor depositionNeudeck, P.G. / Larkin, D.J. / Starr, J.E. / Powell, J.A. / Salupo, C.S. / Matus, L.G. et al. | 1993
- 140
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An InP-based optothyristor for pulsed power-switching applicationsZhao, J.H. / Lis, R. / Coblentz, D. / Illan, J. / McAfee, S. / Burke, T. / Weiner, M. / Buchwald, W. / Jones, K.A. et al. | 1993
- 143
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GaAs planar-doped barrier vacuum microelectronic electron emittersJiang, W.N. / Holcombe, D.J. / Hashemi, M.M. / Mishra, U.K. et al. | 1993
- 146
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Characterization of double pulse-doped channel GaAs MESFETsNakajima, S. / Kuwata, N. / Shiga, N. / Otobe, K. / Matsuzaki, K. / Sekiguchi, T. / Hayashi, H. et al. | 1993
- 149
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An experimental study on the short-channel effects in undergated polysilicon thin-film transistors with and without lightly doped drain structuresLiu, C.T. / Lee, K.H. et al. | 1993
- 152
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Experimental determination of self-heating in submicrometer MOS transistors operated in a liquid-helium ambientGutierrez-D., E.A. / Deferm, L. / Declerck, G. et al. | 1993