Fabrication of high mobility two-dimensional electron and hole gases in GeSi/Si (English)
- New search for: Xie, Y.H.
- New search for: Fitzgerald, E.A.
- New search for: Monroe, D.
- New search for: Silverman, P.J.
- New search for: Watson, G.P.
- New search for: Xie, Y.H.
- New search for: Fitzgerald, E.A.
- New search for: Monroe, D.
- New search for: Silverman, P.J.
- New search for: Watson, G.P.
In:
Journal of Applied Physics
;
73
, 12
;
8364-8370
;
1993
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ISSN:
- Article (Journal) / Print
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Title:Fabrication of high mobility two-dimensional electron and hole gases in GeSi/Si
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Additional title:Herstellung von zweidimensionalen Hoch-Elektronenbeweglichkeits-Elektronen- und Löcher-Gasen in GeSi/Si
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Contributors:Xie, Y.H. ( author ) / Fitzgerald, E.A. ( author ) / Monroe, D. ( author ) / Silverman, P.J. ( author ) / Watson, G.P. ( author )
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Published in:Journal of Applied Physics ; 73, 12 ; 8364-8370
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Publisher:
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Publication date:1993
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Size:7 Seiten, 10 Bilder, 35 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 73, Issue 12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 8017
-
Depth profiling of the Ge concentration in SiGe alloys using in situ ellipsometry during reactive‐ion etchingKroesen, G. M. W. / Oehrlein, G. S. / Fre´sart, E. de / Haverlag, M. et al. | 1993
- 8027
-
Role of cladding layer thicknesses on strained‐layer InGaAs/GaAs single and multiple quantum well lasersLiu, D. C. / Lee, C. P. / Tsai, C. M. / Lei, T. F. / Tsang, J. S. / Chiang, W. H. / Tu, Y. K. et al. | 1993
- 8035
-
Line shape analysis of higher order nonlinear processes in time‐resolved degenerate four‐wave mixing in GaAsWu, Song et al. | 1993
- 8041
-
Nonlinear optical properties of CdSe quantum dotsPark, S. H. / Casey, Michael P. / Falk, Joel et al. | 1993
- 8046
-
Upconversion dynamics of Er3+:YAIO3Simkin, D.J. et al. | 1993
- 8046
-
Upconversion dynamics of Er3+:YAlO3Simkin, D. J. / Koningstein, J. A. / Myslinski, P. / Boothroyd, S. A. / Chrostowski, J. et al. | 1993
- 8050
-
Studies of photorefractive diffraction dynamic in paraelectric KTa1−xNbxO3 crystalsYe, Peixian / Yang, Changxi / Lian, Yingwu / Wang, Dadi / Guan, Qincai / Wang, Jiyang et al. | 1993
- 8059
-
Short pulse electron beam excitation of the high‐pressure atomic Ne laserShon, Jong W. / Rhoades, Robert L. / Verdeyen, Joseph T. / Kushner, Mark J. et al. | 1993
- 8066
-
Fabrication and optical properties of lead‐germanate glasses and a new class of optical fibers doped with Tm3+Wang, J. / Lincoln, J. R. / Brocklesby, W. S. / Deol, R. S. / Mackechnie, C. J. / Pearson, A. / Tropper, A. C. / Hanna, D. C. / Payne, D. N. et al. | 1993
- 8076
-
Optical Kerr‐effect measurement for a series of alcoholsHarrison, Neil J. / Jennings, Barry R. et al. | 1993
- 8081
-
Spatial coherence measurements and x‐ray holographic imaging using a laser‐generated plasma x‐ray source in the water window spectral regionTurcu, I. C. E. / Ross, I. N. / Schulz, M. S. / Daido, H. / Tallents, G. J. / Krishnan, J. / Dwivedi, L. / Hening, A. et al. | 1993
- 8088
-
Transient heating and melting transformations in argon‐ion laser irradiation of polysilicon filmsXu, Xianfan / Taylor, Scott L. / Park, Hee K. / Grigoropoulos, Costas P. et al. | 1993
- 8097
-
Analysis of a diode with a ferroelectric cathodeSchachter, L. / Ivers, J. D. / Nation, J. A. / Kerslick, G. S. et al. | 1993
- 8111
-
Plasma‐sheath approximate solutions for planar and cylindrical anodes and probesBiblarz, O. / Brown, G. S. et al. | 1993
- 8122
-
Hydrogen‐atom spectroscopy of the ionizing plasma containing molecular hydrogen: Line intensities and ionization rateSawada, Keiji / Eriguchi, Kouji / Fujimoto, Takashi et al. | 1993
- 8126
-
Electron and metastable densities in parallel‐plate radio‐frequency dischargesGreenberg, K. E. / Hebner, G. A. et al. | 1993
- 8134
-
K‐shell x‐ray yield scaling for aluminum x‐pinch plasmasKalantar, D. H. / Hammer, D. A. / Mittal, K. C. / Qi, N. / Young, F. C. / Stephanakis, S. J. / Burkhalter, P. G. / Mehlman, G. / Newman, D. A. et al. | 1993
- 8139
-
A fundamental mode, high‐power, large‐orbit gyrotron using a rectangular interaction regionRadack, D. J. / Ramaswamy, K. / Destler, W. W. / Rodgers, J. et al. | 1993
- 8146
-
Surface cleaning of C‐doped p+ GaAs with hydrogen electron cyclotron resonance plasmaWatanabe, Noriyuki / Nittono, Takumi / Ito, Hiroshi / Kondo, Naoto / Nanishi, Yasushi et al. | 1993
- 8151
-
Temporal evolution of the electron energy distribution function in oxygen and chlorine gases under dc and ac fieldsJiang, Ping / Economou, Demetre J. et al. | 1993
- 8161
-
Lattice position of Si in GaAs determined by x‐ray standing wave measurementsShih, A. / Cowan, P. L. / Southworth, S. / Fotiadis, L. / Hor, C. / Karlin, B. / Moore, F. / Dobisz, E. / Dietrich, H. et al. | 1993
- 8169
-
X‐ray scattering studies of FeSi2 films epitaxially grown on Si(111)Gay, J. M. / Stocker, P. / Re´thore´, F. et al. | 1993
- 8179
-
Optical doping of soda‐lime‐silicate glass with erbium by ion implantationSnoeks, E. / van den Hoven, G. N. / Polman, A. et al. | 1993
- 8184
-
Radiation damage in SiO~2/Sl induced by low-energy electrons via plasmon excitationYunogami, T. / Mizutani, T. et al. | 1993
- 8184
-
Radiation damage in SiO2/Si induced by low‐energy electrons via plasmon excitationYunogami, Takashi / Mizutani, Tatsumi et al. | 1993
- 8189
-
Scanning probe microscopy studies of electromigration in electroplated Au wiresPaniccia, M. / Flinn, P. / Reifenberger, R. et al. | 1993
- 8198
-
Pressure‐induced rocksalt phase of aluminum nitride: A metastable structure at ambient conditionXia, Qing / Xia, Hui / Ruoff, Arthur L. et al. | 1993
- 8201
-
Kinetics of laser‐induced phase transitions in Ni‐Al alloysBostanjoglo, O. / Penschke, V. et al. | 1993
- 8206
-
Penetration profiles for fast grain‐boundary diffusion by the dissociative mechanismMishin, Yu. M. / Herzig, Chr. et al. | 1993
- 8215
-
Boron diffusion through thin gate oxides: Influence of nitridation and effect on the Si/SiO2 interface electrical characteristicsMathiot, D. / Straboni, A. / Andre, E. / Debenest, P. et al. | 1993
- 8221
-
Ion channeling study of Scx(Yb,Er)1−xAs films on GaAs (001)Guivarc’h, A. / Ballini, Y. / Minier, M. / Guenais, B. / Dupas, G. / Ropars, G. / Regreny, A. et al. | 1993
- 8227
-
Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1−y molecular‐beam epitaxial layersSeong, Tae‐Yeon / Norman, A. G. / Ferguson, I. T. / Booker, G. R. et al. | 1993
- 8237
-
Doping of Si thin films by low‐temperature molecular beam epitaxyGossmann, H.‐J. / Unterwald, F. C. / Luftman, H. S. et al. | 1993
- 8242
-
Pulsed laser deposition of SiC films on fused silica and sapphire substratesRimai, L. / Ager, R. / Hangas, J. / Logothetis, E. M. / Abu‐Ageel, Nayef / Aslam, M. et al. | 1993
- 8250
-
Single‐crystal Si/NiSi2/Si(100) structuresTung, R. T. / Eaglesham, D. J. / Schrey, F. / Sullivan, J. P. et al. | 1993
- 8258
-
Interfacial reactions of ultrahigh vacuum deposited yttrium thin films on (111)Si at low temperaturesLee, T. L. / Chen, L. J. et al. | 1993
- 8267
-
Misfit dislocation distributions in capped (buried) strained semiconductor layersGosling, T. J. / Bullough, R. / Jain, S. C. / Willis, J. R. et al. | 1993
- 8279
-
Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin filmsHayzelden, C. / Batstone, J. L. et al. | 1993
- 8290
-
Incongruent transfer in laser deposition of FeSiGaRu thin filmsvan de Riet, E. / Kools, J. C. S. / Dieleman, J. et al. | 1993
- 8297
-
The energetics of dislocation array stability in strained epitaxial layersGosling, T. J. / Willis, J. R. / Bullough, R. / Jain, S. C. et al. | 1993
- 8304
-
Optimal epilayer thickness for InxGa1-xAs and InyAI1-yAs composition measurement by high-resolution x-ray diffractionBennett, Brian R. et al. | 1993
- 8304
-
Optimal epilayer thickness for InxGa1−xAs and InyAl1−yAs composition measurement by high‐resolution x‐ray diffractionBennett, Brian R. / del Alamo, Jesu´s A. et al. | 1993
- 8309
-
Hindered transformation of Pd2Ge to PdGe in the Pd/a‐Ge:H systemEdelman, F. / Cytermann, C. / Brener, R. / Eizenberg, M. / Weil, R. / Beyer, W. et al. | 1993
- 8313
-
Remote n‐type modulation doping of InAs quantum wells by ‘‘deep acceptors’’ in AlSbShen, Jun / Dow, John D. / Ren, Shang Yuan / Tehrani, Saied / Goronkin, Herb et al. | 1993
- 8319
-
Free‐carrier absorption of nondegenerate semiconductors in quantizing magnetic fields: Nonpolar optical phonon scatteringWu, Chhi‐Chong / Lin, Chau‐Jy et al. | 1993
- 8324
-
Multicarrier characterization method for extracting mobilities and carrier densities of semiconductors from variable magnetic field measurementsKim, J. S. / Seiler, D. G. / Tseng, W. F. et al. | 1993
- 8336
-
Nondestructive diagnostic method using ac surface photovoltage for detecting metallic contaminants in silicon wafersShimizu, Hirofumi / Munakata, Chusuke et al. | 1993
- 8340
-
Behavior of InP:Fe under high electric fieldTurki, K. / Picoli, G. / Viallet, J. E. et al. | 1993
- 8349
-
Energy levels of GaSb grown by metalorganic chemical vapor depositionSu, Y. K. / Chen, S. M. et al. | 1993
- 8353
-
Trap‐assisted conduction in nitrided‐oxide and re‐oxidized nitrided‐oxide n‐channel metal‐oxide‐semiconductor field‐effect transistorsFleischer, S. / Lai, P. T. / Cheng, Y. C. et al. | 1993
- 8359
-
Transport measurements in p‐type CdTe single crystals and ion‐beam doped thin filmsMoesslein, Jochen / Lopez‐Otero, Adolfo / Fahrenbruch, Alan L. / Kim, Donghwan / Bube, Richard H. et al. | 1993
- 8359
-
Transport measurements in p-type CdTe single crystals and ion-beam Jochen Moesslein, doped thin filmsLopez-Otero, Adolfo et al. | 1993
- 8364
-
Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/SiXie, Y. H. / Fitzgerald, E. A. / Monroe, D. / Silverman, P. J. / Watson, G. P. et al. | 1993
- 8371
-
Role of initial conductance and gas pressure on the conductance response of single‐crystal SnO2 thin films to H2, O2, and COVetrone, J. / Chung, Y.‐W. / Cavicchi, R. / Semancik, S. et al. | 1993
- 8377
-
Properties of Co‐N, Co‐Fe‐N, and Co‐Zr‐N films prepared by rf sputtering in nitrogen‐argon gas mixturesShih, K. K. / Karasinski, J. et al. | 1993
- 8381
-
ZnTe: A potential interlayer to form low resistance back contacts in CdS/CdTe solar cellsRioux, Dennis / Niles, David W. / Ho¨chst, Hartmut et al. | 1993
- 8386
-
Minority‐carrier recombination kinetics and transport in ‘‘surface‐free’’ GaAs/AlxGa1−xAs double heterostructuresGilliland, G. D. / Wolford, D. J. / Kuech, T. F. / Bradley, J. A. / Hjalmarson, H. P. et al. | 1993
- 8397
-
Optical tuning by angular constraint of the electron gas in a cylindrical quantum wellHuang, Danhong / Gumbs, Godfrey et al. | 1993
- 8397
-
Optical tuning by angular constraint of the electron gas in a cylindricalHuang, Danhong et al. | 1993
- 8402
-
Effect of pressure on the growth of crystallites of low‐pressure chemical‐vapor‐deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin‐film transistorsDimitriadis, C. A. / Stoemenos, J. / Coxon, P. A. / Friligkos, S. / Antonopoulos, J. / Economou, N. A. et al. | 1993
- 8402
-
Effect of pressure on the growth of crystallites of low-pressure chemical-vapor-deposited polycrystalline silicon films and the effective electron mobility under high normal field and thin-film transistorsDimitriadis, C.A. / Stoemenos, J. / Coxon, P.A. / Friligkos, S. / Antonopoulos, J. / Economou, N.A. et al. | 1993
- 8412
-
Enhanced surface/interface recombination and surface inversion of Ni decorated Si/Si(Ge)/Si heterostructuresZhou, T. Q. / Buczkowski, A. / Radzimski, Z. J. / Rozgonyi, G. A. et al. | 1993
- 8419
-
Growth of high‐Tc YBa2Cu3Oy films with an off‐axis sputtering configurationWang, L. M. / Sung, H. H. / Chern, J. H. / Yang, H. C. / Horng, H. E. et al. | 1993
- 8423
-
The influence of oxygen partial pressure and temperature on Bi‐Pb‐Sr‐Ca‐Cu‐O 110 K superconductor phase formation and its stabilityZhu, Wen / Nicholson, Patrick S. et al. | 1993
- 8429
-
Nonrandom gold‐YBa2Cu3O7−x compositesVeretnik, D. / Reich, S. et al. | 1993
- 8436
-
Determination of magnetic anisotropy by transverse susceptibility measurement—an application to NdFeBZimmermann, G. et al. | 1993
- 8441
-
Soft magnetic properties of Co‐Fe‐Al‐N filmsIwasaki, Hitoshi / Akashi, Reiko / Ohsawa, Yuichi et al. | 1993
- 8441
-
Soft magnetic properties of Co-Fe-AI-N filmsIwasaki, Hitoshi et al. | 1993
- 8447
-
Structural chemistry, magnetism and 119Sn Mössbauer spectroscopy of ternary compounds REMn6Sn6 (RE=Pr,Nd,Sm)Weitzer, F. et al. | 1993
- 8447
-
Structural chemistry, magnetism and 119Sn Mo¨ssbauer spectroscopy of ternary compounds REMn6Sn6 (RE=Pr,Nd,Sm)Weitzer, F. / Leithe‐Jasper, A. / Hiebl, K. / Rogl, P. / Qi, Qinian / Coey, J. M. D. et al. | 1993
- 8447
-
Structural chemistry, magnetism and ^1^1^9Sn Moessbauer spectroscopy of ternary compounds REMn~6Sn~6 (RE = Pr,Nd,Sm)Weitzer, F. / Leithe-Jasper, A. / Hiebl, K. / Rogl, P. et al. | 1993
- 8451
-
Relation between the Ω6 intensity parameter of Er3+ ions and the 151Eu isomer shift in oxide glassesTanabe, S. / Ohyagi, T. / Todoroki, S. / Hanada, T. / Soga, N. et al. | 1993
- 8451
-
Relation between the Q6 intensity parameter of Er3+ ions and the 151Eu isomer shift in oxide glassesTanabe, S. et al. | 1993
- 8455
-
Self‐defocusing in GaP induced by band‐gap resonant nonlinear refractionJi, W. / Tang, S. H. / Kukaswadia, A. K. et al. | 1993
- 8458
-
Criteria for Si quantum‐well luminescenceRen, Shang Yuan / Dow, John D. / Shen, Jun et al. | 1993
- 8463
-
Electric‐field‐induced refractive index changes in three‐step asymmetric coupled quantum wellsSusa, Nobuhiko et al. | 1993
- 8471
-
Orientational decay in poled second‐order nonlinear optical guest‐host polymers: Temperature dependence and effects of poling geometrySta¨helin, M. / Walsh, C. A. / Burland, D. M. / Miller, R. D. / Twieg, R. J. / Volksen, W. et al. | 1993
- 8480
-
Determining energy‐band offsets in quantum wells using only spectroscopic dataKoteles, Emil S. et al. | 1993
- 8485
-
Differences in the structure of amorphous hydrogenated silicon‐carbide layers prepared with either methane or silylmethanesFo¨lsch, J. / Ru¨bel, H. / Schade, H. et al. | 1993
- 8489
-
Characterization of hydrogenated GaAs/AlGaAs multiple quantum well structuresZavada, J. M. / Voillot, F. / Lauret, N. / Wilson, R. G. / Theys, B. et al. | 1993
- 8495
-
Photoluminescence of liquid‐phase epitaxial Te‐doped GaSbWu, Meng‐Chyi / Chen, Chi‐Ching et al. | 1993
- 8502
-
Magneto‐optics of excitons in a center Si δ‐doped GaAs/AlGaAs quantum wellRimmer, J. S. / Evans, J. H. / Innes, A. / Hamilton, B. / Missous, M. et al. | 1993
- 8502
-
Magneto-optics of excitons in a center Si d-doped GaAs-AlGaAs quantum wellRimmer, J.S. et al. | 1993
- 8506
-
Characterization of SiC whiskers through infrared‐absorption spectroscopyDiGregorio, J. F. / Furtak, T. E. et al. | 1993
- 8514
-
Optical and compositional studies of SiN thin films with conventional and synchrotron radiation ellipsometryLogothetidis, S. / Petalas, J. / Markwitz, A. / Johnson, R. L. et al. | 1993
- 8519
-
Generation mechanisms of paramagnetic centers by gamma‐ray irradiation at and near the Si/SiO2 interfaceAwazu, Koichi / Watanabe, Kikuo / Kawazoe, Hiroshi et al. | 1993
- 8526
-
Excited‐state absorption in the infrared emission domain of Nd3+‐doped Y3Al5O12, YLiF4, and LaMgAl11O19Guyot, Yannick / Moncorge, Richard et al. | 1993
- 8531
-
Observation of a charge limit for semiconductor photocathodesWoods, M. / Clendenin, J. / Frisch, J. / Kulikov, A. / Saez, P. / Schultz, D. / Turner, J. / Witte, K. / Zolotorev, M. et al. | 1993
- 8536
-
r-x phonon-assisted thermionic currents in the GaAs-AlxGa1-xAs interface systemTammaro, David et al. | 1993
- 8536
-
Γ‐X phonon‐assisted thermionic currents in the GaAs/AlxGa1−xAs interface systemTammaro, David / Hess, Karl / Capasso, Federico et al. | 1993
- 8544
-
Effect of gas‐phase collisions in pulsed‐laser desorption: A three‐dimensional Monte Carlo simulation studySibold, Dieter / Urbassek, Herbert M. et al. | 1993
- 8552
-
Laser ablative hole formation in amorphous thin filmsBlatter, A. / Ortiz, C. et al. | 1993
- 8561
-
Valency and type conversion in CuInSe2 with H2 plasma exposure: A photoemission investigationNelson, Art J. / Frigo, Sean P. / Rosenberg, Richard et al. | 1993
- 8561
-
Valency and type conversion in CulnSe2 with H2 plasma exposure: A photoemission investigationNelson, Art J. et al. | 1993
- 8565
-
Modeling of time‐dependent process changes and hysteresis in Ti‐O2 reactive sputteringKusano, E. et al. | 1993
- 8575
-
Morphology and crystallography of single crystal precipitates on Al alloy films grown by the sputtering methodNiwa, Hideo / Yamaguchi, Ichiro / Yagi, Haruyoshi / Kato, Masaharu et al. | 1993
- 8580
-
Effects of high‐flux low‐energy (20–100 eV) ion irradiation during deposition on the microstructure and preferred orientation of Ti0.5Al0.5N alloys grown by ultra‐high‐vacuum reactive magnetron sputteringAdibi, F. / Petrov, I. / Greene, J. E. / Hultman, L. / Sundgren, J.‐E. et al. | 1993
- 8580
-
Effects of high-flux low-energy (20-1l00 eV) ion irradiation during deposition on the microstructure and preferred orientation of Ti(0.5)Al(0.5)N alloys grown by ultra-high-vacuum reactive magnetron sputteringAdibi, F. / Petrov, I. / Green, J.E. / Hultman, L. / Sundgren, J.E. et al. | 1993
- 8580
-
Effects of high-flux low-energy (20-100 eV) ion irradiation during deposition on the microstructure and preferred orientation of Tio 5Alo 5N alloys grown by ultra-high-vacuum reactive magnetron sputteringAdibi, F. et al. | 1993
- 8590
-
Growth kinetics of micron‐size nickel lines produced by laser‐assisted decomposition of nickel tetracarbonylBoughaba, S. / Auvert, G. et al. | 1993
- 8601
-
Thermodynamic limits on multigap photovoltaic cells: Design mismatch for a varying meteorological environmentSpirkl, W. / Sizmann, R. et al. | 1993
- 8607
-
Compound‐lens injector for a pulsed 13‐TW electron beamSanford, T. W. L. / Poukey, J. W. / Halbleib, J. A. / Mock, R. C. et al. | 1993
- 8615
-
Characteristics of a GaAs‐InGaAs delta‐doped quantum‐well switchHsu, Wei‐Chou / Guo, Der‐Feng / Liu, Wen‐Chau / Lour, Wen‐Shiung et al. | 1993
- 8615
-
Characteristics of a GaAs-lnGaAs delta-doped quantum-well switchHsu, Wei-Chou et al. | 1993
- 8618
-
Collector‐up light‐emitting charge injection transistors in n‐InGaAs/InAlAs/p‐InGaAs and n‐InGaAs/InP/p‐InGaAs heterostructuresBelenky, G. L. / Garbinski, P. A. / Luryi, S. / Mastrapasqua, M. / Cho, A. Y. / Hamm, R. A. / Hayes, T. R. / Laskowski, E. J. / Sivco, D. L. / Smith, P. R. et al. | 1993
- 8628
-
Current‐voltage curves for a spatially periodic Ge diodeAbraham‐Shrauner, Barbara / Weeks, William / Zitter, Robert N. et al. | 1993
- 8633
-
Sequential tunneling versus resonant tunneling in a double‐barrier diodeHu, Yuming / Stapleton, Shawn et al. | 1993
- 8637
-
Radiation detection from Fiske steps in Josephson junctions above 200 GHzCirillo, M. / Modena, I. / Santucci, F. / Carelli, P. / Castellano, M. G. / Leoni, R. et al. | 1993
- 8641
-
Wide‐band frequency response measurements of photodetectors using low‐level photocurrent noise detectionXie, Fu Zeng / Kuhl, D. / Bo¨ttcher, E. H. / Ren, S. Y. / Bimberg, D. et al. | 1993
- 8647
-
X‐ray diffraction study of surface acoustic wave device under acoustic excitationZolotoyabko, E. / Jacobsohn, E. / Shechtman, D. / Kantor, B. / Salzman, J. et al. | 1993
- 8650
-
Noise‐free parametric energy multiplication for frequency measurements of an anharmonic mono‐ion oscillatorYu, N. / Dehmelt, H. / Nagourney, W. et al. | 1993
- 8653
-
Interdiffusion of GaAs/Ga1−xInxAs quantum wellsTaylor, W. J. / Kuwata, N. / Yoshida, I. / Katsuyama, T. / Hayashi, H. et al. | 1993
- 8656
-
Effect of electromagnetic radiation on alternating current losses in high‐Tc superconductorsKumar, Binod / Das, Kamal K. et al. | 1993
- 8659
-
Interpretation of the activation energy derived from a stretched‐exponential description of defect density kinetics in hydrogenated amorphous siliconBenatar, Lisa E. / Redfield, David / Bube, Richard H. et al. | 1993
- 8662
-
An explanation for the directionality of interfacet migration during molecular beam epitaxical growth on patterned substratesGuha, S. / Madhukar, A. et al. | 1993
- 8665
-
SUMMARY OF THE PACS| 1993
- 8666
-
SUBJECT HEADINGS USED IN VOLUME 73| 1993
- 8671
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SUBJECT INDEX TO VOLUME 73| 1993
- 8770
-
AUTHOR INDEX TO VOLUME 73| 1993
- R1
-
Frequency control of semiconductor lasersOhtsu, M. / Nakagawa, K. / Kourogi, M. / Wang, W. et al. | 1993