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512 and 1024 element linear In(x)Ga(1-x)As detector arrays have been fabricated for cutoff wavelenghts of 1.7 micron (x = 0.53, Eg = 0-73 eV), 2.2 micron (x = 0.71, Eg = 0.56 eV), and 2.6 micron (x = 0.82, Eg = 0.47 eV) using hydride vapor phase epitaxy (VPE) and metallorganic chemical vapor deposition (MNOCVD). The 25 x 500 microns pixel sizes have a center to center spacing of 25 micron and currently exhibit typical leakage currents of 6 pA (300 K, -10 mV) for 1.7 micron cutoff arrays, 500 pA /(300 K, - 10 mV) for 2.2 micron cutoff arrays, and 20 nA (300 K, -10 mV) for 2.6 micron cutoff arrays. Improved crystal growth, n-type sulfur doping (about 1 x 1017 cm-3) of the semiconductor 'cap' layer and the active InGaAs layer, and post-crystal growth thermal cyclings of the detector wafers have helped to reduce the leakage currents in these detectors. Furthermore, these techniques have produced a remarkable increase in the photodetector yields, which is essential for the commercial avaibility of these arrays. The relationship between the photodetector bandgap (Eg) and the theoretically lowest attainable leakage current is discussed. The design of a new infrared (IR) multiplexer operating at near zero bias is also discussed.