Design model and guideline for n-well guard ring in epitaxial CMOS (English)
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In:
IEEE Transactions on Electron Devices
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41
, 10
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1806-1810
;
1994
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ISSN:
- Article (Journal) / Print
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Title:Design model and guideline for n-well guard ring in epitaxial CMOS
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Additional title:Entwurfsmodell und Richtlinie für Schutzringe mit n-Topf im epitaxialen CMOS-Prozeß
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Contributors:Huang, C.Y. ( author ) / Chen, M.J. ( author )
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Published in:IEEE Transactions on Electron Devices ; 41, 10 ; 1806-1810
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Publisher:
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Publication date:1994
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Size:5 Seiten, 8 Bilder, 8 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 41, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1685
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Drastic Reduction of Gate Leakage in InAlAs-InGaAs HEMT's Using a Pseudomorphic InAlAs Hole Barrier LayerHeedt, C. et al. | 1994
- 1691
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Transport Characteristics of a Symmetrically Extended Bipolar TransistorJorke, H. et al. | 1994
- 1698
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The Collapse of Current Gain in Multi-Finger Heterojunction Bipolar Transistors: Its Substrate Temperature Dependence, Instability Criteria, and ModelingLiu, W. et al. | 1994
- 1708
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Analysis of BJT's, Pseudo-HBT's, and HBT's by Including the Effect of Neutral Base RecombinationMohammadi, S. et al. | 1994
- 1716
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Design, Fabrication, and Characterization of Striped Channel HEMT'sBollaert, S. et al. | 1994
- 1725
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Origin and Modeling of the Frequency Dependent Output Conductance in Microwave GaAs MESFET's With Buried p LayerChoi, S. et al. | 1994
- 1734
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Investigation of Negative Differential Resistance Phenomena in GaSb-AlSb-InAs-GaSb-AlSb-InAs StructuresWang, Y.-H. et al. | 1994
- 1742
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Highly Doped InGaP-InGaAs-GaAs Pseudomorphic HEMT's with 0.35 mm GatesSuehiro, H. et al. | 1994
- 1742
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Highly Doped InGaP/InGaAs/GaAs Pseudomorphic HEMT's with 0.35 m GatesSuehiro, H. / Miyata, T. / Kuroda, S. / Hara, N. et al. | 1994
- 1742
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Highly doped InGaP/InGaAs/GaAs pseudomorphic HEMT's with 0.35 micron gatesSuehiro, H. / Miyata, T. / Kuroda, S. / Hara, N. / Takikawa, M. et al. | 1994
- 1747
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Effects of Deposition Temperature on the Oxidation Resistance and Electrical Characteristics of Silicon NitrideYoshimaru, M. et al. | 1994
- 1753
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An Analytical, Aperture, and Two-Layer Carrier Diffusion MTF and Quantum Efficiency Model for Solid-State Image SensorsStevens, E.G. et al. | 1994
- 1761
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Electroluminescence Characteristics and Current-Conduction Mechanism of a-SiC:H P-I-N Thin-Film Light-Emitting Diodes with Barrier Layer Inserted at P-I InterfaceJen, T.-S. et al. | 1994
- 1770
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A Micromachined Ultra-Thin-Film Gas DetectorNajafi, N. et al. | 1994
- 1778
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Characterization of AlGaAs Microstructure Fabricated by AlGaAs-GaAs MicromachiningUenishi, Y. et al. | 1994
- 1784
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Two-Dimensional Energy-Dependent Models for the Simulation of Substrate Current in Submicron MOS-FET'sAgostinelli Jr, V.M. et al. | 1994
- 1796
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Significant Time Constants Defined by High-Current Charge Dynamics in Advanced Silicon-Based Bipolar TransistorsUgajin, M. et al. | 1994
- 1801
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Characterization of the Cell Leakage of a Stacked Trench Capacitor (STT) CellHamamoto, T. et al. | 1994
- 1806
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Design Model and Guideline for n-Well Guard Ring in Epitaxial CMOSHuang, C.-Y. et al. | 1994
- 1811
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A New Approach to Determine the Effective Channel Length and the Drain-and-Source Series Resistance of Miniaturized MOSFET'sGuo, J.-C. et al. | 1994
- 1819
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Effect of Anode Material on High-Field-Induced Hole Current in SiO2 Layer of Metal-Oxide-Semiconductor Field-Effect TransistorGao, X. et al. | 1994
- 1824
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Hot Carrier Induced Bipolar Transistor Degradation Due to Base Dopant Compensation by Hydrogen: Theory and ExperimentQuon, D. et al. | 1994
- 1831
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Short Channel Characteristics of Si MOSFET With Extremely Shallow Source and Drain Regions Formed by Inversion LayersNoda, H. et al. | 1994
- 1837
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0.3-mm Mixed Analog-Digital CMOS Technology for Low-Voltage OperationIshii, T. et al. | 1994
- 1837
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0.3-micron mixed analog-digital CMOS technology for low-voltage operationIshii, T. / Miyamoto, M. / Nagai, R. / Nishida, T. / Seki, K. et al. | 1994
- 1837
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0.3-m Mixed Analog/Digital CMOS Technology for Low-Voltage OperationIshii, T. / Miyamoto, M. / Nagai, R. / Nishida, T. et al. | 1994
- 1843
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Electronic Transport Through a Kink in an Electron WaveguideYalabik, M.C. et al. | 1994
- 1848
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Modeling of Oxide Breakdown from Gate Charging During Resist AshingFang, S. et al. | 1994
- 1856
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Analysis and Optimal Design of Semi-Insulator Passivated High-Voltage Field Plate Structures and Comparison with Dielectric Passivated StructuresGoud, C.B. et al. | 1994
- 1866
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Measured DC Performance of Large Arrays of Silicon Field EmittersPalmer, W.D. et al. | 1994
- 1871
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Short Channel Threshold Dependence of the Inversion Channel Heterostructure Field Effect TransistorTaylor, G.W. et al. | 1994
- 1873
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Kink Effect Related to the Self-Side-Gating Effect in GaAs MESFET'sHaruyama, J. et al. | 1994
- 1876
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Characteristics of Polycrystalline-Si Thin-Film Transistors Fabricated by Excimer Laser Annealing MethodKubo, N. et al. | 1994
- 1880
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An Evaluation of Super-Steep-Retrograde Channel Doping for Deep-Submicron MOSFET ApplicationsTian, H. et al. | 1994
- 1882
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Characteristics of High Mobility Polysilicon Thin-Film Transistors Using Very Thin Sputter-Deposited SiO2 FilmsYamauchi, N. et al. | 1994