A 85 volt high performance silicon complementary bipolar technology for high voltage analog applications (English)
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- New search for: Chen, D.
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- New search for: Bashir, R.
- New search for: Chen, D.
- New search for: Hebert, F.
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- New search for: Hobrecht, S.
- New search for: You, H.
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In:
ESSDERC, European Solid State Device Research Conference, 24
;
217-220
;
1994
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ISBN:
- Conference paper / Print
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Title:A 85 volt high performance silicon complementary bipolar technology for high voltage analog applications
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Additional title:Eine komplementäre Bipolartechnologie für 85 V für analoge Hochspannungsschaltungen
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Contributors:Bashir, R. ( author ) / Chen, D. ( author ) / Hebert, F. ( author ) / Santis, J. de ( author ) / Ramde, A. ( author ) / Hobrecht, S. ( author ) / You, H. ( author ) / Maghsoudnia, P. ( author )
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Published in:
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Publisher:
- New search for: Editions Frontieres
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Place of publication:Gif-sur-Yvette
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Publication date:1994
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Size:4 Seiten, 6 Bilder, 1 Tabelle, 4 Quellen
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ISBN:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Influence of Process and Device Parameters on the Performance of Portable RF Communication CircuitsBaltus, P. / Institute of Physics et al. | 1994
- 11
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Physical modeling of silicon thermal processingRafferty, C.S. et al. | 1994
- 11
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Physical Modelling of Silicon Thermal ProcessingRafferty, C. S. / Institute of Physics et al. | 1994
- 21
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Highly Uniform RTP Growth and Characterisation of Ultra-Thin Oxynitride Dielectrics Grown in N~2OWrixon, R. / O'Sullivan, P. / Mathewson, A. / Institute of Physics et al. | 1994
- 25
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Impact of the Furnace Nitridation Temperature in N~2O Ambient on the Quality of the Si/SiO~2 SystemVincent, E. / Papadas, C. / Riva, C. / Pio, F. / Institute of Physics et al. | 1994
- 29
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Physical Study of RTP N~2O - and NH~3-Nitrided Thin SiO~2 FilmsBouvet, D. / Clivaz, P. A. / Almeida, J. / Coluzza, C. / Institute of Physics et al. | 1994
- 33
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Comparison of Low Thermal Budget ONO Bottom Oxides with Improved Data Retention Characteristics for Very High Density Flash Memory ProductsRoux Dit Buisson, O. / Mondon, F. / Guillaumot, B. / Reimbold, G. / Institute of Physics et al. | 1994
- 37
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Electrical Properties of Oxynitride Layers Obtained by Annealing of Nitrogen Doped SiliconTemple Boyer, P. / Scheid, E. / Olivie, F. / Institute of Physics et al. | 1994
- 41
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Effect of Rapid Thermal N~2O Annealing on the Dielectric Properties of LPCVD Ta~2O~5 FilmsSun, S. C. / Chen, T. F. / Institute of Physics et al. | 1994
- 47
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Perimeter Effects and Doping Conditions in Narrow-Emitter Silicon Bipolar TransistorsBoeck, J. / Popp, J. / Schreiter, R. / Von Philipsborn, H. / Institute of Physics et al. | 1994
- 51
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Controlled Sub-nm Oxide Growth and its Application to High Speed Bipolar Poly-Emitter TransistorsBerthold, A. M. / Mulder, J. G. M. / Felde, A. V. / Tz Kwakman, L. F. / Institute of Physics et al. | 1994
- 55
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Interfacial Oxide Break-Up in NPN Polysilicon Emitter Bipolar Transistors by Fluorine ImplantationMoiseiwitsch, N. E. / Ashburn, P. / Institute of Physics et al. | 1994
- 59
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Polysilicon-Emitter, SiGe Base Heterojunction Bipolar Transistor using Solid-Source MBERyum, B. R. / Han, T.-H. / Lee, S.-C. / Institute of Physics et al. | 1994
- 63
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Identification of Peripheral Base Currents in (Si or SiGe) Epitaxial -Base Single-Polysilicon Self-Aligned Bipolar TransistorsBousetta, H. / Giroult-Matlakowski, G. / Le Tron, B. / Dutartre, D. / Institute of Physics et al. | 1994
- 67
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Reduced Sidewall Effects in SiGe-Base Bipolar TransistorsHueting, R. J. E. / Slotboom, J. W. / Institute of Physics et al. | 1994
- 71
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Bipolar Magnetotransistor: Relative Sensitivity RevisitedCastagnetti, R. / Wachutka, G. / Riccobene, C. / Baltes, H. / Institute of Physics et al. | 1994
- 77
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A Comparison of Implant Enhanced Dopant Diffusion in Bulk and SOI MaterialCrowder, S. W. / Griffin, P. B. / Plummer, J. D. / Institute of Physics et al. | 1994
- 81
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Accurate 2D Modelling of Titanium Salicide ProcessFornara, P. / Poncet, A. / Mathiot, D. / Institute of Physics et al. | 1994
- 85
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A New Calibration Method for Dopant Diffusion Models Applied To Silicon Heterobipolar TechnologyJones, S. K. / Hill, C. / Nigrin, S. / Manson, A. J. / Institute of Physics et al. | 1994
- 89
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Enhanced Diffusion of Antimony Caused by Phosphorus Diffusion At High ConcentrationsPichler, P. / Ryssel, H. / Wallmann, G. / Ploss, R. / Institute of Physics et al. | 1994
- 93
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Dynamic Behaviour of Arsenic Clusters in SiliconBauer, H. / Pichler, P. / Ryssel, H. / Institute of Physics et al. | 1994
- 97
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Monte Carlo Simulation of Ion Implantation into Two-Dimensional Structures and its Application to the Prediction of Lateral Sims ResultsSimionescu, A. / Hobler, G. / Von Criegern, R. / Institute of Physics et al. | 1994
- 103
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The SUSTAIN Network on Submicron Silicon TechnologyDe Keersmaecker, R. / De Meyer, K. / Institute of Physics et al. | 1994
- 107
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The Network NEWSSTANDLorenz, J. / Institute of Physics et al. | 1994
- 111
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E.L.E.N: European Laboratory for Electronic NoiseNougier, J. P. / Institute of Physics et al. | 1994
- 115
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A Short Guide to the PHANTOMS NetworkVan Rossum, M. / Magnus, W. / Institute of Physics et al. | 1994
- 121
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0.35 micrometer CMOS technology with chemical mechanical polishing for three metallization levels planarizationLerme, M. / Arena, C. / Deleonibus, S. / Demolliens, O. / Fayolle, M. / Gobil, Y. / Guegan, G. / Heitzmann, M. et al. | 1994
- 121
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0.35m CMOS Technology with Chemical Mechanical Polishing for Three Metallization Levels PlanarizationLerme, M. / Arena, C. / Deleonibus, S. / Demolliens, O. / Institute of Physics et al. | 1994
- 125
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Integration of Chemical Mechanical Polishing as Premetal Planarization in a Sub Micron CMOS ProcessLouwers, S. P. A. / Institute of Physics et al. | 1994
- 129
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Dielectric Layer Planarization Using Chemical-Mechanical-PolishingBae, Y. T. / Kim, H. K. / Lim, S. K. / Choi, K. H. / Institute of Physics et al. | 1994
- 133
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Global Planarization of Ozone TEOS Oxide by Resist Etch Back for Sub-0.5m Multilevel MetallizationNeureither, B. / Binder, F. / Fischer, E. / Gabric, Z. / Institute of Physics et al. | 1994
- 137
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Post-Etch Cleaning after Dry Etching the Emitter Windows to Improve the Bipolar Characteristics in a 0.5m BiCMOS ProcessDecoutere, S. / Van Haelemeersch, S. / Deferm, L. / Vleugels, F. / Institute of Physics et al. | 1994
- 143
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Si/SiGe Heterostructure p-MOSFET with Triangular Ge Channel ProfilesVoinigescu, S. P. / Salama, C. A. T. / Noel, J.-P. / Kamins, T. I. / Institute of Physics et al. | 1994
- 143
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Si/SiGe heterostructure p-MOSFET with trinagular Ge channel profilesVoinigescu, S.P. / Salama, C.A.T. / Noel, J.P. / Kamins, T.I. et al. | 1994
- 147
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Mechanisms as of low frequency noise in P channel MOSFETsHurley, P.K. / Moran, S. / Wall, L. / Mathewson, A. / Mason, B. et al. | 1994
- 147
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Mechanisms of Low Frequency Noise in P Channel MOSFETsHurley, P. K. / Moran, S. / Wall, L. / Mathewson, A. / Institute of Physics et al. | 1994
- 151
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Back Junction SiGe PMOS - A New Structure with an Improved Effective Channel MobilityNiu, G.-F. / Ruan, G. / Tang, T.-A. / Kwor, R. / Institute of Physics et al. | 1994
- 155
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An Efficient Channel Optimisation Method for 0.1m and Below MOSFETsHonore, J.-C. / Gautier, J. / Institute of Physics et al. | 1994
- 155
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An efficient channel optimisation method for 0,1 micron and below MOSFET'sHonore, J.C. / Gautier, J. et al. | 1994
- 159
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Low Temperature Operation as a Tool to Investigate Second Order Effects in Submicron MOSFETsGutierrez-Dominguez, E. A. / Deferm, L. / Institute of Physics et al. | 1994
- 165
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Simulation of Graft Base Formation and Emitter Outdiffusion in High-Performance Bipolar LSIsPuchner, H. / Selberherr, S. / Institute of Physics et al. | 1994
- 169
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Series Resistances of Polysilicon Emitter Bipolar Transistors: Simulation and MeasurementDubois, E. / Bricout, P.-H. / Robilliart, E. / Institute of Physics et al. | 1994
- 173
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Low-Frequency Noise in Polysilicon Emitter Bipolar TransistorsMarkus, H. A. W. / Kleinpenning, T. G. M. / Institute of Physics et al. | 1994
- 177
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The Impact of the Substrate on the Electrical Performance of Silicon Junction DiodesSimoen, E. / Vanhellemont, J. / Bosman, G. / Claeys, C. / Institute of Physics et al. | 1994
- 181
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A Physics-Based, Accurate Spice Model of Impact-Ionization Effects in Bipolar TransistorsZanoni, E. / Dal Fabbro, A. / Vendrame, L. / Verzellesi, G. / Institute of Physics et al. | 1994
- 187
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A 0,35 micron CMOS technology optimized for low-power applicationsMontree, A.H. / Lifka, H. / Meyssen, V.M.H. / Woerlee, P.H. et al. | 1994
- 187
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A 0.35 m CMOS Technology Optimized for Low-Power ApplicationsMontree, A. H. / Lifka, H. / Meyssen, V. M. H. / Verhulst, Y. M. / Institute of Physics et al. | 1994
- 191
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A high performance 0.4 micron BiCMOS technology for 16Mb fast SRAMsYamazaki, T. / Suzuki, H. / Yoshida, H. / Nakamura, K. / Kuhara, S. / Kimura, T. / Takada, M. et al. | 1994
- 191
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A High Performance 0.4m BiCMOS Technology for 16Mb Fast SRAMsYamazaki, T. / Suzuki, H. / Yoshida, H. / Nakamura, K. / Institute of Physics et al. | 1994
- 195
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A 0.8 m CMOS, Double Polysilicon EEPROM Technology Module Optimized for Minimum Wafer CostCacharelis, P. / Hoffstetter, D. / Schmidt, S. / Nilles, J. / Institute of Physics et al. | 1994
- 196
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A 0,8 micron CMOS, double polysilicon EEPROM technology module optimized for minimum wafer costCacharelis, P. / Hoffstetter, D. / Schmidt, S. / Nilles, J. / Gough, J. / Smillie, J. et al. | 1994
- 199
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An Optimized Poly-Buffered LOCOS Process for a 0.35m CMOS TechnologyMieville, J. P. / Rooyackers, R. / Deferm, L. / Institute of Physics et al. | 1994
- 199
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An optimized poly-buffered LOCOS process for a 0,35 micron CMOS technologyMieville, J.P. / Rooyackers, R. / Deferm, L. et al. | 1994
- 203
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Atomic Layer Engineered-Sealed Interface Local Oxidation (ALE-SILO) 0.30m MOS Devices Isolation using a Vacuum Load-Lock Cluster Vertical FurnaceDeleonibus, S. / Martin, F. / Guegan, G. / Lerme, M. / Institute of Physics et al. | 1994
- 207
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Anomalous Stress Effects of Trench IsolationRohan, D. / Doyle, D. / O'Neill, M. / Institute of Physics et al. | 1994
- 213
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800-V Wiring for HVIC Application using Biased Polysilicon Field PlatesMurray, A. F. J. / Lane, W. A. / Institute of Physics et al. | 1994
- 217
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A 85 Volt High Performance Silicon Complementary Bipolar Technology for High Voltage Analog ApplicationsBashir, R. / Chen, D. / Hebert, F. / Desantis, J. / Institute of Physics et al. | 1994
- 221
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High Current Gain Lateral Bipolar Action in DMOS TransistorsEdholm, B. / Olsson, J. / Soederbaerg, A. / Bohlin, K. / Institute of Physics et al. | 1994
- 225
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MUCH - A MOS-Like Switch for Smart PowerTiensuu, S. / Soederbaerg, A. / Svedberg, P. / Institute of Physics et al. | 1994
- 229
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Dynamics of Punch-Through and Non Punch-Through IGBT Turn-on Mechanism in Resonant ConvertersWidjaja, I. / Kurnia, A. / Divan, D. / Shenai, K. / Institute of Physics et al. | 1994
- 233
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Optimization of junction-isolated vertical NPN and PNP BHTs in a modular BiCMOS smart-power processArx, C. von / Feudel, T. / Ryter, R. / Strecker, N. / Zingg, R.P. / Fichtner, W. et al. | 1994
- 233
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Optimization of Junction-Isolated Vertical Npn and Pnp BJTs in a Modular BiCMOS Smart-Power ProcessVon Arx, C. / Feudel, T. / Ryter, R. / Strecker, N. / Institute of Physics et al. | 1994
- 239
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Measurement of the Vertical and Lateral Diffusion of Interstitials in SiPeters, C. J. / Xu, D.-X. / McCaffrey, J. / Rolfe, S. J. / Institute of Physics et al. | 1994
- 243
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Oxygen Precipitation in Cz-Si Under Uniform StressMisiuk, A. / Datsenko, L. I. / Surma, B. / Popov, V. P. / Institute of Physics et al. | 1994
- 247
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Simulation of Internal Gettering Sites in Czochralski SiliconSenkader, S. / Esfandyari, J. / Hobler, G. / Murphy, B. / Institute of Physics et al. | 1994
- 251
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Determination of Reaction Barrier Energies in the Case of Gold DiffusionGhaderi, K. / Hobler, G. / Budil, M. / Mader, L. / Institute of Physics et al. | 1994
- 255
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Characterisation of Mechanical Stress in Advanced PBL IsolationJones, S. K. / Ahmed, M. / Rothwell, W. J. / De Wolf, I. / Institute of Physics et al. | 1994
- 259
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Study of Local Silicon Oxidation with Calibrated Nitride ModelFerreira, P. / Senez, V. / Collard, D. / Baccus, B. / Institute of Physics et al. | 1994
- 265
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Optical Lithography Techniques for 0.25 Micron and BelowVan den Hove, L. / Ronse, K. / Institute of Physics et al. | 1994
- 273
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IMEMS - Integrated Micro Electro Mechanical Systems by VLSI and MicromachiningBaltes, H. / Brand, O. / Korvink, J. G. / Lenggenhager, R. / Institute of Physics et al. | 1994
- 283
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Effect of Silicidation Schemes on Interface Contact ResistanceWang, Q. F. / Lauwers, A. / Deweerdt, B. / Maex, K. / Institute of Physics et al. | 1994
- 287
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Dual Silicide Technology:WSi~x Polycide Gate and Self-Aligned CoSi~2 Source/DrainFranssila, S. / Palmans, R. / Stone, M. / Maex, K. / Institute of Physics et al. | 1994
- 291
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Characterization of Low Pressure Chemical-Vapor-Deposited Titanium Nitride from Metalorganic SourcesSun, S. C. / Tsai, M. H. / Institute of Physics et al. | 1994
- 295
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Photoresist Removal after Plasma Etching of Metal Film using TiW as Antireflective Coating or as a Barrier MetalLee, W. M. / Kirk, S. / Tse, C. / Institute of Physics et al. | 1994
- 299
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Deep UV lithography for 0.35 micron design rules application to CMOS technology with three metallization levelsVinet, F. / Buffet, N. / Heitzmann, M. / Laurens, M. / LeCornec, C. / Lerme, M. / Molle, P. / Morand, Y. et al. | 1994
- 299
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Deep UV Lithography for 0.35m Design Rules Application to CMOS Technology with Three Metallization LevelsVinet, F. / Buffet, N. / Heitzmann, M. / Laurens, M. / Institute of Physics et al. | 1994
- 303
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Improved Hot-Carrier Reliability in a 0.5-m TLM CMOS Process by Back-End Process OptimizationVan den Bosch, G. / Deferm, L. / Forester, L. / Collins, T. / Institute of Physics et al. | 1994
- 309
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Characterization of Two E' Center Charge Traps in Conventionally Grown Thermal SiO~2 on SiConley, J. F. / Lenahan, P. M. / Evans, H. L. / Lowry, R. K. / Institute of Physics et al. | 1994
- 313
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Noise Analysis of Si-MOSFETs with Gate Oxides Deposited by Low Pressure RTCVDMorfouli, P. / McLarty, P. / Misra, V. / Hauser, J. / Institute of Physics et al. | 1994
- 317
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Electron Trapping and Detrapping in 8nm -Thick Gate - Oxide of p^+ Poly-Gate p-MOSFETsBravaix, A. / Vuillaume, D. / Thirion, V. / Straboni, A. / Institute of Physics et al. | 1994
- 321
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Electrical Properties of 0.1 m and Sub-0.1 m Single-Drain and LDD MOSFETs from Room To Liquid Helium TemperaturesBalestra, F. / Tsuno, M. / Matsumoto, T. / Koyanagi, M. / Institute of Physics et al. | 1994
- 325
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A Comparative Study of Three Designs for Sub Half Micron Buried P-Channel MOSFETGuegan, G. / Lerme, M. / Deleonibus, S. / Reimbold, G. / Institute of Physics et al. | 1994
- 329
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LF Noise Investigations of 0.3 m Gate n-MOSFETs Reliability and Micrometre Nitrided Gate Oxide MOSFETsZimmermann, J. / Ghibaudo, G. / Guegan, G. / Straboni, A. / Institute of Physics et al. | 1994
- 335
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3-D Simulation of Low Pressure Chemical Vapor DepositionBaer, E. / Lorenz, J. / Institute of Physics et al. | 1994
- 339
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Three-Dimensional Simulation of Step Coverage for Contact Hole MetallizationStrasser, E. / Selberherr, S. / Institute of Physics et al. | 1994
- 343
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Three-Dimensional, Electro-Mechanical Simulation of a Silicon Pressure SensorCiampolini, P. / Pierantoni, A. / Rudan, M. / Institute of Physics et al. | 1994
- 347
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Electro-Thermo-Mechanical Field Analysis Using SESESFunk, J. / Korvink, J. G. / Wachutka, G. / Baltes, H. / Institute of Physics et al. | 1994
- 351
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Improving Three-Dimensional Semiconductor Modelling Through Layout and Process Flow AnalysisWestermann, M. / Regli, P. / Strecker, N. / Fichtner, W. / Institute of Physics et al. | 1994
- 355
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3D Modelling of a Bipolar Smart Optical Sensor Fabricated in CMOS TechnologyVecchi, M. C. / Zorzi, N. / Pierantoni, A. / Abenda, S. / Institute of Physics et al. | 1994
- 361
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Scaling gate electrode thickness for 0.18 micron CMOS devicesNunan, P. / Cheung, K. / Duane, M. / Mitros, J. / Beek, M. ter et al. | 1994
- 361
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Scaling Gate Electrode Thickness for 0.18m CMOS DevicesNunan, P. / Cheung, K. / Duane, M. / Mitros, J. / Institute of Physics et al. | 1994
- 365
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Application of Optical, X-Ray and E-Beam Lithography Options to 0.18 Micron Silicon FET TechnologyReeves, C. M. / Turcu, I. C. E. / Gundlach, A. M. / Stevenson, J. T. M. / Institute of Physics et al. | 1994
- 369
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Impact of Polysilicon Depletion Effect on Circuit Performance for 0.35 CMOS TechnologyArora, N. D. / Rios, R. / Huang, C.-L. / Institute of Physics et al. | 1994
- 373
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IN-Situ Doped P^+ Polysilicon as a MOS Gate MaterialDantu, S. V. / Tarr, N. G. / Peters, C. J. / Institute of Physics et al. | 1994
- 377
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Suppression of The Vt Roll-Up Effect in Sub-Micron NMOSTKalnitsky, A. / Frijns, R. / Mallardeau, C. / Daemen, E. / Institute of Physics et al. | 1994
- 381
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Anomalous Temperature Dependence of NMOSFET Lifetime Under Hot Electron StressHwang, H. / Goo, J.-S. / Kwon, H. / Shin, H. / Institute of Physics et al. | 1994
- 387
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Micromechanic Pressure Sensors with Optical Readout and CMOS-Amplifiers on SiliconHilleringmann, U. / Adams, S. / Goser, K. / Institute of Physics et al. | 1994
- 391
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Improving the Sensitivity of the Si~3N~4 Gate pH-ISFET Using Modified Processing TechniquesGarde, A. / Lane, W. / Alderman, J. / Institute of Physics et al. | 1994
- 395
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Amorphous Silicon Photodiodes for X-Ray Survey MonitoringManfredotti, C. / Fizzotti, F. / Vittone, E. / Boero, M. / Institute of Physics et al. | 1994
- 399
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VLSI-Compatible Stress-Annealing in Doped Silicon FilmsScheiter, T. / Biebl, M. / Hierold, C. / Klose, H. / Institute of Physics et al. | 1994
- 403
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Gettering of Metals by Voids in Silicon DevicesBattaglia, A. / Fallica, G. / Percolla, G. / Raineri, V. / Institute of Physics et al. | 1994
- 407
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Generation of Deep Levels in Silicon under Post-Hydrogen -Plasma Thermal AnnealNam, C. W. / Ashok, S. / Institute of Physics et al. | 1994
- 413
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Impact of Plasma Etching on Device Hot Carrier and Fowler-Nordheim ReliabilityLi, X.-Y. / Aum, P. / Chan, D. / Viswanathan, C. R. / Institute of Physics et al. | 1994
- 417
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A Novel ESD Protection Technique for Submicron CMOS TechnologiesKwon, K. H. / Park, H. R. / Kim, D. G. / Park, K. S. / Institute of Physics et al. | 1994
- 421
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Experimental Analysis of Polarization in The Hot-Carrier Luminescence of Silicon DevicesSelmi, L. / Pieracci, A. / Lanzoni, M. / Pavesi, M. / Institute of Physics et al. | 1994
- 425
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An Analytical Hot-Carrier Degradation Model for LDD NMOSFETSGoo, J.-S. / Kim, Y.-G. / L'Yee, H. / Kwon, H.-Y. / Institute of Physics et al. | 1994
- 429
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Low Frequency Noise in the Base Current of Polysilicon Emitter BJTs after Hot-Carrier StressMounib, A. / Balestra, F. / Ghibaudo, G. / Mathieu, N. / Institute of Physics et al. | 1994
- 433
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Analytical Calculation of Avalanche and Thermal Snapback Points in Bipolar TransistorsKrabbenborg, B. H. / De Graaff, H. C. / Mouthaan, A. J. / Institute of Physics et al. | 1994
- 439
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GaInP-GaAs Quasi Self-Aligned HBT TechnologyLaunay, P. / Driad, R. / Benchimol, J. L. / Alexandre, F. / Institute of Physics et al. | 1994
- 443
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Current Dependence of Small Signal Base-Collector Capacitance in Microwave AlGaAs/GaAs HBTsAhmad, T. / Rezazadeh, A. A. / Gill, S. S. / Institute of Physics et al. | 1994
- 447
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Microwave Noise Performance of Self-Aligned GaInP/GaAs HBTRoux, J. P. / Escotte, L. / Plana, R. / Graffeuil, J. / Institute of Physics et al. | 1994
- 451
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Self-Aligned AlGaAs/GaAs HBT Circuits Achieved by CBE Selective Base Contact RegrowthDriad, R. / Duchenois, A. M. / Menouni, M. / Alexandre, F. / Institute of Physics et al. | 1994
- 455
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A New In~0~.~5~3Al~0~.~2~2Ga~0~.~2~5As/InP Heterojunction Bipolar Transistor Grown by LP-MOCVDWu, Y. H. / Su, J. S. / Hsu, W. C. / Liu, W. C. / Institute of Physics et al. | 1994
- 459
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A Fast and Accurate Method of Extracting Two Critical Device Parameters of SAGCM InP/InGaAs Avalanche PhotodiodesMa, C. L. F. / Deen, M. J. / Tarof, L. E. / Institute of Physics et al. | 1994
- 463
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2D Simulation of Heterojunction Devices Including Energy Balance and Lattice HeatingApanovich, Y. / Cottle, R. / Lyumkis, E. / Polsky, B. / Institute of Physics et al. | 1994
- 469
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The Differential SiGe-HBTSchueppen, A. / Koenig, U. / Gruhle, A. / Kibbel, H. / Institute of Physics et al. | 1994
- 473
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Current Gain-Early Voltage Product in SiGe Base HBTs with Thin -Si:H EmittersTang, Z. R. / Kamins, T. / Salama, C. A. T. / Institute of Physics et al. | 1994
- 477
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Temperature Dependence of the Current Gain of Si/Si~1~-~XGe~X Heterojunction and Si Homojunction Bipolar TransistorsAshburn, P. / Nouailhat, A. / Hashim, M. D. R. / Parker, G. J. / Institute of Physics et al. | 1994
- 481
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Low-Frequency Noise Properties of Si/SiGe Heterojunction Bipolar TransistorsPlana, R. / Roux, J. P. / Escotte, L. / Graffeuil, J. / Institute of Physics et al. | 1994
- 485
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Performance Analysis of SiGe-Base BJTsPellegrini, A. / Colalongo, L. / Gnudi, A. / Rudan, M. / Institute of Physics et al. | 1994
- 489
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A 0.4 micron quantum well p-channel MOSFET with high currentHofmann, F. / Schäfer, H. / Vogelsang, T. / Risch, L. et al. | 1994
- 489
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A 0.4m Quantum Well P-Channel MOSFET with High CurrentHofmann, F. / Schaefer, H. / Vogelsang, T. / Risch, L. / Institute of Physics et al. | 1994
- 495
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On the Charge Build-Up Mechanisms in Very Thin Insulator LayersVincent, E. / Papadas, C. / Riva, C. / Pio, F. / Institute of Physics et al. | 1994
- 499
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A Parameter Extraction Methodology for FLOTOX EEPROMsTwomey, A. / Mathewson, A. / Gigon, F. / Institute of Physics et al. | 1994
- 503
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Applications of a Novel Hot Carrier Injection Model in Flash EEPROM DesignConcannon, A. / Mathewson, A. / Piccinini, F. / Mei, G. L. / Institute of Physics et al. | 1994
- 507
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Temperature Dependence of Fowler-Nordheim Emission Tunneling Current in MOS StructuresKies, R. / Papadas, C. / Pananakakis, G. / Ghibaudo, G. / Institute of Physics et al. | 1994
- 511
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Thin Oxide MOS Damage Caused by Wafer Charging in Magnetized Helium PlasmaAtanassova, E. / Institute of Physics et al. | 1994
- 515
-
Homogeneous Hot Hole Injection by Tunnelling in Gate Oxides of CMOS DevicesBrozek, T. / Viswanathan, C. R. / Institute of Physics et al. | 1994
- 521
-
The Importance of European Silicon VLSIDunn, D. / Institute of Physics et al. | 1994
- 529
-
The Potential of Strain: Piezoelectric Semiconductor DevicesRees, G. J. / Institute of Physics et al. | 1994
- 539
-
A New Degradation Mechanism Induced by Dx-Centers in AlGaAs/InGaAs PMHEMTsZanoni, E. / De Bortoli, E. / Meneghesso, G. / Neviani, A. / Institute of Physics et al. | 1994
- 543
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Electroluminescence and Gate Current Generated by Impact Ionization in 0.1m Gatelength HEMTs on GaAsAniel, F. / Boucaud, P. / Sylvestre, A. / Crozat, P. / Institute of Physics et al. | 1994
- 547
-
Drain Current DLTS Measurements of MBE-Grown GaAs/In~yGa~1~-~yAs/Al~xGa~l~-~xAs HEMTsHaddab, Y. / Py, M. A. / Buehlmann, H.-J. / Ilegems, M. / Institute of Physics et al. | 1994
- 551
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A New Delta-Doped Quantum-Well In GaAs-GaAs Resonant-Tunneling Switching DeviceLiu, W.-C. / Guo, D.-F. / Laih, L.-W. / Yih, S.-R. / Institute of Physics et al. | 1994
- 555
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Microwave Noise of Hot Electrons in Al~xGa~1~-~xAs ChannelDe Murcia, M. / Richard, E. / Benvenuti, A. / Institute of Physics et al. | 1994
- 559
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High Carrier Density and Mobility in GaAs/InGaAs/GaAs Double Delta-Doped Channels HeterostructuresKao, M. J. / Hsu, W. C. / Liu, W. C. / Shieh, H. M. / Institute of Physics et al. | 1994
- 565
-
A Novel Bipolar Device on SOI Wafers for Analog BICMOS ApplicationsYallup, K. / Edwards, S. / Creighton, O. / Institute of Physics et al. | 1994
- 569
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The Operation of Partially Depleted SOI Inverters from Room down to Liquid Helium TemperatureSimoen, E. / Claeys, C. / Institute of Physics et al. | 1994
- 573
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Polysilicon TFT for Active-Matrix Applications: Electrical Performance Improvement by Using A Lightly in-Situ Doped DrainPichon, L. / Raoult, F. / Bonnaud, O. / Briand, D. / Institute of Physics et al. | 1994
- 577
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Anomalous Off-Current Mechanisms in Poly-Si Thin Film TransistorsReita, C. / Migliorato, P. / Fortunato, G. / Institute of Physics et al. | 1994
- 581
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Thin Film Transistor Fabrication with in-Situ Sequential ProcessingQuinn, L. J. / Baine, P. T. / Mitchell, S. J. N. / Armstrong, B. M. / Institute of Physics et al. | 1994
- 585
-
A Comparison of Hot-Hole Induced Degradation in Thin-Film Transistors using Thermally Recrystallised and LPCVD Deposited Polycrystalline Silicon as Active LayerFortunato, G. / Pecora, A. / Tallarida, G. / Reita, C. / Institute of Physics et al. | 1994
- 593
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Two Dimensional Carrier Profiling in Submicron StructuresCampisano, S. U. / Privitera, V. / Raineri, V. / Spinella, C. / Institute of Physics et al. | 1994
- 597
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Automated Lateral Junction Measurements in Integrated Circuit Structures to 30 Nm PrecisionPearson, P. J. / Hill, C. / Allen, R. W. / Robbins, D. J. / Institute of Physics et al. | 1994
- 601
-
Measurement of the Diffusion Length in Silicon Wafers with Improved Spatial ResolutionFaifer, V. / Dyukov, V. / Pravdivtsev, A. / Skurida, D. / Institute of Physics et al. | 1994
- 605
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A New Method Using Charge Pumping Measurements to Determine Electrical Channel Length Variation During Ageing of 0.5m CMOS TransistorsDorval, D. / Dars, P. / Merckel, G. / Bonnaud, O. / Institute of Physics et al. | 1994
- 609
-
Charge Pumping of Single Interface Traps in Submicron MOSFETsGroeseneken, G. / De Wolf, I. / Bellens, R. / Maes, H. E. / Institute of Physics et al. | 1994
- 613
-
Analysis of Electromigration Lifetime Measurements using Microscopic Polycrystalline Computer SimulationTrattles, J. T. / O'Neill, A. G. / Mecrow, B. C. / Institute of Physics et al. | 1994
- 619
-
Novel High Gate Barrier AlInAs/GaInAs/InP HEMT Structure: Concept Verification and Key TechnologiesBach, H.-G. / Umbach, A. / Unterboersch, G. / Passenberg, W. / Institute of Physics et al. | 1994
- 623
-
Small and Large Signal Model of a 150 GHz InAlAs/InGaAs HEMTDiskus, C. G. / Bergamaschi, C. / Schefer, M. / Patrick, W. / Institute of Physics et al. | 1994
- 627
-
State of The Art AlInAs/GaInAs/InP HEMTs Fabricated using an Experimental Electron-Beam Lithography SystemPatrick, W. / Bergamaschi, C. / Klepser, B.-U. / Meier, H. P. / Institute of Physics et al. | 1994
- 631
-
Electron and Hole Real Space Transfer in InAlAs/InGaAs Heterostructure DeviceBerthold, G. / Mastrapasqua, M. / Canali, C. / Manfredi, M. / Institute of Physics et al. | 1994
- 635
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Selective Grown Vertical GaAs FETs with an Insulator/Metal/Insulator Gate StructureLangen, W. / Raafat, T. M. / Hardtdegen, H. / Hart, A. V. D. / Institute of Physics et al. | 1994
- 639
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Characterization of Transient Effects in the S-Parameters of GaAs MESFETs by Means of Pulsed MeasurementsBegin, M. / Ghannouchi, F. M. / Beauregard, F. / Selmi, L. / Institute of Physics et al. | 1994
- 645
-
Planar Silicon Optical Waveguide Light ModulatorsLeistiko, O. / Bak, H. / Institute of Physics et al. | 1994
- 649
-
A Light Controlled Optical Modulator in SiliconXiao, Z. / Engstroem, O. / Institute of Physics et al. | 1994
- 653
-
Electroluminescence from Strained Si/SiGe/Si Heterostructure DiodesApetz, R. / Vescan, L. / Loo, R. / Carius, R. / Institute of Physics et al. | 1994
- 657
-
Room-Temperature Electro-Luminescence from Er-Implanted Semi-Insulating Polycrystalline SiliconLombardo, S. / Campisano, S. U. / Van den Hoven, G. N. / Polman, A. / Institute of Physics et al. | 1994
- 661
-
Room Temperature Light Emitting Diodes in Er-Doped Crystalline SiCoffa, S. / Franzo, G. / Priolo, F. / Polman, A. / Institute of Physics et al. | 1994
- 665
-
Visible Electroluminescence in Silicon Composite NanostructuresBaru, V. G. / Chernushich, A. P. / Elinson, M. I. / Zaharov, L. J. / Institute of Physics et al. | 1994
- 671
-
Channel Engineering by Heavy Ion ImplantsSkotnicki, T. / Guerin, L. / Mathiot, D. / Gauneau, M. / Institute of Physics et al. | 1994
- 675
-
Latchup Design Precautions for 1.0 Micron Junction Isolated CMOS ASICS Operating at Temperatures Up to 525KUffmann, D. / Stemmer, J. / Ackermann, J. / Schroeder, H.-U. / Institute of Physics et al. | 1994
- 679
-
Analysis of Ultra-Low-Power CMOS with Process and Device SimulationSchrom, G. / Liu, D. / Pichler, C. / Svensson, C. / Institute of Physics et al. | 1994
- 683
-
Strategy for Sub 0.5m Circuit Performance Prediction Using Process and Device SimulationGaston, G. J. / Bold, B. S. / Institute of Physics et al. | 1994
- 687
-
Cost and Yield Estimation - A New TCAD ComponentAxelrad, V. / Granik, Y. / Rollins, V. B. J. G. / Institute of Physics et al. | 1994
- 693
-
Low Frequency Fluctuations in Scaled-Down Silicon CMOS Devices: Status and TrendsGhibaudo, G. / Roux-Dit-Buisson, O. / Institute of Physics et al. | 1994
- 701
-
Guided-Wave Electro-Optic Modulation Techniques for Mm Waves in III-V SemiconductorsWalker, R. G. / Institute of Physics et al. | 1994
- 711
-
Vertical-Cavity Laser Diodes with Low Threshold Current DensitiesZeeb, E. / Reiner, G. / Ries, M. / Hackbarth, T. / Institute of Physics et al. | 1994
- 715
-
Output Characteristics of AlGaAs-DH- and InGaAs-QW - Vertical-Cavity Surface-Emitting Lasers under Strong Cavity Resonance DetuningGmachl, C. / Koeck, A. / Golshani, A. / Freisleben, S. / Institute of Physics et al. | 1994
- 719
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Surface Mode Coupling in GaAs/AlGaAs Laser Diodes - A New Technique for a Single Mode LaserKoeck, A. / Gmachl, C. / Freisleben, S. / Golshani, A. / Institute of Physics et al. | 1994
- 723
-
Polarization-Independent, High Contrast InGaAsP/InGaAsP MQW Waveguide ModulatorCacciatore, C. / Campi, D. / Coriasso, C. / Neitzert, H. C. / Institute of Physics et al. | 1994
- 727
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Dark Current Noise Characteristics of Separate Absorption, Grading, Charge, and Multiplication InP/InGaAs Avalanche PhotodiodesMa, C. L. F. / Deen, M. J. / Tarof, L. E. / Institute of Physics et al. | 1994
- 731
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Far Infrared Detectors using P-Si~1~-~xGe~x/Si Multiple Quantum WellsRobbins, D. J. / Stanaway, M. B. / Millidge, S. / Leong, W. Y. / Institute of Physics et al. | 1994
- 737
-
Formation of SiGe Alloy Layers in SIMOX Substrates by Ge^+ ImplantationChen, N. X. / Gong, L. / Schork, R. / Yuan, J. M. / Institute of Physics et al. | 1994
- 741
-
Si/SiGe Modulation Doped Structures by Gas Source Molecular Beam Epitaxy Using Arsenic as a DonorMatsumura, A. / Prasad, R. S. / Thornton, T. J. / Fernandez, J. M. / Institute of Physics et al. | 1994
- 745
-
Single-Wafer, SiGe heterostructures grown by cold wall UHV-CVD: applciation to hetero-junction bipolar transisotr (HBT) fabricationGlowacki, F. / Campidelli, Y. / Garchery, L. / Gruhle, A. et al. | 1994
- 745
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Single-Wafer, SiGe Heterostructures Grown by Cold Wall UHV-CVD: Application To Hetero-Junction Bipolar Transistor (HBT) FabricationGlowacki, F. / Campidelli, Y. / Garchery, L. / Gruhle, A. / Institute of Physics et al. | 1994
- 749
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Selective Epitaxial Growth of Si~1~-~xGe~x for Device Applications and NanostructuresVescan, L. / Loo, R. / Dieker, C. / Wickenhaeuser, S. / Institute of Physics et al. | 1994
- 753
-
Characteristics of Passivated High-Voltage Silicon Carbide DiodesSavage, S. M. / Ramberg, L. P. / Kronlund, B. / Bergman, K. / Institute of Physics et al. | 1994
- 757
-
Defect Reduction by Post-Oxidation Annealing of Oxides on P- and N-Type 6H-SiCStein von Kamienski, E. / Goelz, A. / Kurz, H. / Institute of Physics et al. | 1994
- 761
-
Feasibility of 4.5kV and 10kV Silicon Carbide IGBTsBakowski, M. / Gustafsson, U. / Ramberg, L. P. / Institute of Physics et al. | 1994
- 767
-
Comparison of device architecture's for 0.18 micron MOS transistors on very thin film SOI materialGautier, J. / Raynaud, C. / Faynot, O. et al. | 1994
- 767
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Comparison of Device Architectures for 0.18m MOS Transistors on Very Thin Film SOI MaterialGautier, J. / Raynaud, C. / Faynot, O. / Institute of Physics et al. | 1994
- 771
-
Study of Drain-Induced-Barrier Lowering in Deep Submicron MOSFETs versus TemperatureFikry, W. / Ghibaudo, G. / Dutoit, M. / Institute of Physics et al. | 1994
- 775
-
Transport Simulations of Ultrashort Planar Doped Barrier Field Effect TransistorsRein, A. / Zandler, G. / Saraniti, M. / Lugli, P. / Institute of Physics et al. | 1994
- 779
-
The Low-Frequency Noise Behaviour of Different SOI CMOS TechnologiesSimoen, E. / Claeys, C. / Institute of Physics et al. | 1994
- 783
-
A New Method for Interface State Evaluation in SOI MOSFETs Using Drain Current TransientsIonescu, A. M. / Rusu, A. / Chovet, A. / Cristoloveanu, S. / Institute of Physics et al. | 1994
- 787
-
Study of Self Heating Effects on Future SOI Devices OperationYachou, D. / Gautier, J. / Institute of Physics et al. | 1994
- 793
-
Integration of Innovative Process Modules in a Full 0.35m CMOS Process and Circuit DemonstrationHaond, M. / Lerme, M. / Institute of Physics et al. | 1994
- 793
-
Integration of innovative process modules in a full 0.35 micron CMOS process and circuit demonstrationHaond, M. / Lerne, M. et al. | 1994
- 803
-
Influence of Nitride Passivation on the Performance of InAlAs/InGaAs HEMTsBaeyens, Y. / Van Hove, M. / De Raedt, W. / Schreurs, D. / Institute of Physics et al. | 1994
- 807
-
A New Technological Process for Fabrication of InGaAsP/InP Heterostructure Laser using CBE/MOCVD Growth TechniquesBertone, D. / Boschis, L. / Fornuto, G. / Gastaldi, L. / Institute of Physics et al. | 1994
- 811
-
Electrical Characteristics and Reliability of Ohmic Contacts for InGaAs/InGaAlAs/InP LasersLeech, P. W. / Reeves, G. K. / Institute of Physics et al. | 1994
- 815
-
Effect of CH~4/H~2/CO~2 Reactive Ion Etching and O~2 Plasma Cleaning of InP on MOCVD Overgrown LayersGovett, M. T. / Ojha, S. M. / Thrush, E. J. / Chew, A. / Institute of Physics et al. | 1994
- 819
-
Simulations and Parametric Investigations of Plasma Etching Mechanisms of GaAs CompoundsKetata, K. / Koumetz, S. / Ketata, M. / Debrie, R. / Institute of Physics et al. | 1994
- 825
-
A Scalable Physically Based Analytical DMOS Transistor ModelStiftinger, M. / Soppa, W. / Selberherr, S. / Institute of Physics et al. | 1994
- 829
-
Using RSM Techniques to Contour Plot Response Distributions of Semiconductor ProcessesWalton, A. J. / Fallon, M. / Newsam, M. I. / Ferguson, R. S. / Institute of Physics et al. | 1994
- 833
-
Compact MOS Modelling for Analogue Circuit SimulationVelghe, R. M. D. A. / Klaassen, D. B. M. / Klaassen, F. M. / Institute of Physics et al. | 1994
- 837
-
Statistical Worst-Case Analysis Techniques for CMOS Technology using Design of ExperimentsClancy, R. / Welten, M. / Wall, L. / Power, J. A. / Institute of Physics et al. | 1994
- 841
-
Advantages of the Methodology using DoE and Simulation for Optimising Advanced Technologies - Application to a Real 0.35m PMOS ArchitectureLe Carval, G. / Poncet, D. / Guegan, G. / Caire, J.-P. / Institute of Physics et al. | 1994