Ga-concentration dependence of magnetocrystalline anisotropy in Gd2Fe(17-x)Ga(x) compounds (English)
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In:
Journal of Applied Physics
;
78
, 2
;
1385-1387
;
1995
-
ISSN:
- Article (Journal) / Print
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Title:Ga-concentration dependence of magnetocrystalline anisotropy in Gd2Fe(17-x)Ga(x) compounds
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Additional title:Ga-Konzentrationsabhängigkeit der magnetokristallinen Anisotropie in Gd2Fe(17-x)Ga(x)-Verbindungen
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Contributors:
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Published in:Journal of Applied Physics ; 78, 2 ; 1385-1387
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Publisher:
-
Publication date:1995
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Size:3 Seiten, 4 Bilder, 1 Tabelle, 8 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:magnetischer Stoff , Konzentration , Gallium , magnetische Anisotropie , Kristallgitter , Mischkristall , Ferrit , Eisenverbindung , chemische Zusammensetzung , Stöchiometrie , intermetallische Verbindung , Curie-Temperatur , Röntgenstrahlbeugung , Magnetisierung , Schmelzen , Konzentrationseinfluss
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Source:
Table of contents – Volume 78, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 607
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Resonant cavity enhanced photonic devicesU¨nlu¨, M. Selim / Strite, Samuel et al. | 1995
- 640
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Electron depletion due to bias of a T‐shaped field‐effect transistorGeorgakis, G. A. / Niu, Qian et al. | 1995
- 647
-
Green’s functions in thermal‐wave physics: Cartesian coordinate representationsMandelis, Andreas et al. | 1995
- 656
-
Electromagnetic scattering and absorption by finite wiresWaterman, P. C. / Pedersen, J. C. et al. | 1995
- 668
-
The complete electromagnetic field of a three‐phase transmission line over the earth and its interaction with the human bodyKing, Ronold W. P. / Wu, Tai T. et al. | 1995
- 684
-
Electrostatic problem of a point charge in the presence of a semi‐infinite semiconductorDonolato, C. et al. | 1995
- 691
-
Ordinary and extraordinary continuous wave lasing at 1.092 and 1.082 mm in bulk Nd:LiTaO3 crystalAbedin, Kazi Sarwar et al. | 1995
- 691
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Ordinary and extraordinary continuous wave lasing at 1.092 and 1.082 μm in bulk Nd:LiTaO3 crystalAbedin, Kazi Sarwar / Sato, Manabu / Ito, Hiromasa / Maeda, Toshiki / Shimamura, Kiyoshi / Fukuda, Tsuguo et al. | 1995
- 691
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Ordinary and extraordinary continuous wave lasing at 1.092 and 1.082 micron in bulk Nd:LiTaO3 crystalAbedin, K.S. / Sato, M. / Ito, H. / Maedo, T. / Shimamura, K. / Fukuda, T. et al. | 1995
- 694
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Cross‐sectional photoluminescence and its application to buried‐layer semiconductor structuresSchaafsma, D. T. / Christensen, D. H. et al. | 1995
- 700
-
A model for cw laser induced mode‐mismatched dual‐beam thermal lens spectrometry based on probe beam profile image detectionShen, Jun / Soroka, Andrew J. / Snook, Richard D. et al. | 1995
- 709
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Novel amino acid crystals for phase‐matched second‐harmonic generation: L‐pyrrolidone‐2‐carboxylic acidKitazawa, Manabu / Higuchi, Ryoichi / Takahashi, Mitsuo / Wada, Tatsuo / Sasabe, Hiroyuki et al. | 1995
- 718
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Intensity threshold for holographic recording in amorphous As2S3 filmsSalminen, O. / Ozols, A. / Riihola, P. / Mo¨nkko¨nen, P. et al. | 1995
- 723
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Statistical properties of Langmuir‐probe and Thomson scattering data reduction provided by an appropriate curve fitting in the mathematical frame of the regularization procedureChegotov, M. V. et al. | 1995
- 731
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Numerical model of an ac plasma display panel cell in neon‐xenon mixturesMeunier, J. / Belenguer, Ph. / Boeuf, J. P. et al. | 1995
- 746
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Ion kinetic‐energy distributions and Balmer‐alpha (Hα) excitation in Ar‐H2 radio‐frequency dischargesRadovanov, S. B. / Olthoff, J. K. / Van Brunt, R. J. / Djurovic´, S. et al. | 1995
- 746
-
Ion kinetic-energy distributions and Balmer-alpha (Ha) excitation in Ar-H2 radio-frequency dischargesRadovanov, S.B. et al. | 1995
- 758
-
Mechanisms for highly ionized magnetron sputteringHopwood, J. / Qian, F. et al. | 1995
- 766
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Breakdown, steady‐state, and decay regimes in pulsed oxygen helicon diffusion plasmasCharles, C. / Boswell, R. W. et al. | 1995
- 774
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Current pulses in dc glow discharges in electronegative gas mixturesPe´re`s, Ire`ne / Pitchford, L. C. et al. | 1995
- 783
-
Multipacting discharges: Constant‐k theory and simulation resultsGilardini, Aldo L. et al. | 1995
- 796
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Photoluminescence measurements on phosphorus implanted silicon: Annealing kinetics of defectsOthonos, Andreas / Christofides, Constantinos et al. | 1995
- 796
-
Photoluminescence measurements on phosphorous implanted silicon: Annealing kinetics of defectsOthonos, A. / Christofides, C. et al. | 1995
- 801
-
Deep‐level impurities in edge‐defined film‐fed‐growth siliconPark, S. H. / Schroder, D. K. et al. | 1995
- 811
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Temperature and strain dependence of the roughening transition in III‐V semiconductor and SiGe epitaxial growthBangert, U. / Harvey, A. J. / Dieker, C. / Hartdegen, H. / Vescan, L. / Smith, A. et al. | 1995
- 817
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Line‐of‐sight measurements of the radiation‐enhanced sublimation of graphiteFranzen, P. / Davis, J. W. / Haasz, A. A. et al. | 1995
- 828
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Transmission electron microscopy analysis of heavily As‐doped, laser, and thermally annealed layers in siliconDokumaci, O. / Rousseau, P. / Luning, S. / Krishnamoorthy, V. / Jones, K. S. / Law, M. E. et al. | 1995
- 832
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Ion induced stress generation in arc‐evaporated TiN filmsLjungcrantz, H. / Hultman, L. / Sundgren, J.‐E. / Karlsson, L. et al. | 1995
- 838
-
Calculation of thermally induced strains in thin films of any crystal classWieder, T. et al. | 1995
- 842
-
Photoluminescence study of defects in ion‐implanted thermal SiO2 filmsNishikawa, Hiroyuki / Watanabe, Eiki / Ito, Daisuke / Takiyama, Makoto / Ieki, Akihito / Ohki, Yoshimichi et al. | 1995
- 842
-
Photoluminescence study of defects in ion-implated thermal SiO2 filmsNishikawa, H. / Watanabe, E. / Ito, D. / Takiyama, M. / Ieki, A. / Ohki, Y. et al. | 1995
- 847
-
Molecular‐dynamics study of the synthesis and characterization of a fully dense, three‐dimensional nanocrystalline materialPhillpot, S. R. / Wolf, D. / Gleiter, H. et al. | 1995
- 862
-
High‐resolution x‐ray diffractometry of ZnTe layers at elevated temperaturesBochni´cˇek, Z. / Holy´, V. / Wolf, K. / Stanzl, H. / Gebhardt, W. et al. | 1995
- 868
-
Sodium diffusion in glasses during electron irradiationJbara, O. / Cazaux, J. / Trebbia, P. et al. | 1995
- 876
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Paramagnetic defects induced by mechanical stress in calcium sulfide phosphorCaurant, D. / Gourier, D. / Demoncy, N. / Ronot, I. / Pham‐Thi, M. et al. | 1995
- 893
-
Internal friction in free‐standing thin Al filmsHeinen, D. / Bohn, H. G. / Schilling, W. et al. | 1995
- 897
-
Solid‐liquid and solid‐vapor equilibrium of Ga‐In‐As‐Sb system and artificial neural network predictionWei, Wu / Luming, Yan / Guangyu, Wei / Ruiwu, Peng et al. | 1995
- 900
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Modeling electromigration‐induced stress evolution in confined metal linesClement, J. J. / Thompson, C. V. et al. | 1995
- 905
-
Thermal diffusivity measurement of thin wires using photothermal deflectionBarkyoumb, J. H. / Land, D. J. et al. | 1995
- 913
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Silicide mediated low temperature crystallization of hydrogenated amorphous silicon in contact with aluminumAshtikar, M. S. / Sharma, G. L. et al. | 1995
- 919
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Morphological evolution of the low‐temperature oxidation of silicon with a gold overlayerChen, C. R. / Chen, L. J. et al. | 1995
- 926
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Effect of growth temperature on dysprosium films deposited by molecular beam epitaxy on different substrate materialsGupta, M. K. / Kothiyal, G. P. / Sahni, V. C. / Vyas, J. C. / Gandhi, D. P. / Muthe, K. P. / Sabharwal, S. C. et al. | 1995
- 929
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Effects of crystallinity and thickness of silicide layer and substrate orientation on the oxidation of NiSi2 on siliconHuang, G. J. / Chen, L. J. et al. | 1995
- 937
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Comparison of P and Sb as n‐dopants for Si molecular beam epitaxyNu¨tzel, J. F. / Abstreiter, G. et al. | 1995
- 941
-
Characterization of anisotropic stress around Si trenches by polarized Raman spectroscopyYoshikawa, M. / Maegawa, M. / Katagiri, G. / Ishida, H. et al. | 1995
- 945
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Characteristics of thermal stresses in Al(Cu) fine lines. I. Unpassivated line structuresYeo, I.‐S. / Ho, P. S. / Anderson, S. G. H. et al. | 1995
- 953
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Characteristics of thermal stresses in Al(Cu) fine lines. II. Passivated line structuresYeo, I.‐S. / Anderson, S. G. H. / Ho, P. S. / Hu, C. K. et al. | 1995
- 962
-
Residual stresses in evaporated silicon dioxide thin films: Correlation with deposition parameters and aging behaviorLeplan, H. / Geenen, B. / Robic, J. Y. / Pauleau, Y. et al. | 1995
- 969
-
The effects of surface roughness on the angle‐dependent total‐reflection x‐ray fluorescence of ultrathin filmsTsuji, Kouichi / Yamada, Takashi / Utaka, Tadashi / Hirokawa, Kichinosuke et al. | 1995
- 974
-
Electron‐beam‐induced crystallization of isolated amorphous regions in Si, Ge, GaP, and GaAsJenc˘ic˘, I. / Bench, M. W. / Robertson, I. M. / Kirk, M. A. et al. | 1995
- 983
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Prediction of solid‐state amorphizing reaction using effective driving forceKwak, J. S. / Chi, E. J. / Choi, J. D. / Park, S. W. / Baik, H. K. / So, M. G. / Lee, S. M. et al. | 1995
- 988
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Kinetic modeling of hydrogen adsorption/absorption in thin films on hydrogen‐sensitive field‐effect devices: Observation of large hydrogen‐induced dipoles at the Pd‐SiO2 interfaceFogelberg, J. / Eriksson, M. / Dannetun, H. / Petersson, L.‐G. et al. | 1995
- 997
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Epitaxial growth and characterization of Y2Co17(0001) thin films deposited on W(110)Robaut, F. / Milkulik, P. / Cherief, N. / McGrath, O. F. K. / Givord, D. / Baumbach, T. / Veuillen, J. Y. et al. | 1995
- 1004
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Deep‐level analysis of n‐type GaAs1−xPx alloysBen Salem, M. M. / Zaidi, M. A. / Maaref, H. / Bourgoin, J. C. et al. | 1995
- 1008
-
Model for determining the density and mobility of carriers in thin semiconducting layers with only two contactsLowney, Jeremiah R. et al. | 1995
- 1013
-
Thermoelectric properties of CoSb3 and related alloysSharp, J. W. / Jones, E. C. / Williams, R. K. / Martin, P. M. / Sales, B. C. et al. | 1995
- 1019
-
Simultaneous measurements of thermoluminescence and thermally stimulated currents in poly(N‐vinylcarbazole)/polycarbonate blendsGl&slash;owacki, I. / Ulan´ski, J. et al. | 1995
- 1026
-
Observations of electromigration induced void nucleation and growth in polycrystalline and near‐bamboo passivated Al linesMarieb, T. / Flinn, P. / Bravman, J. C. / Gardner, D. / Madden, M. et al. | 1995
- 1033
-
Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structureKolni´k, Ja´n / Og˘uzman, I˙smail H. / Brennan, Kevin F. / Wang, Rongping / Ruden, P. Paul / Wang, Yang et al. | 1995
- 1039
-
Electrostatically controlled double‐quantum‐wire electron interferometersOkuda, Masahiro et al. | 1995
- 1050
-
Design of gate‐confined quantum‐dot structures in the few‐electron regimeChen, Minhan / Porod, Wolfgang et al. | 1995
- 1058
-
Understanding hot‐electron transport in silicon devices: Is there a shortcut?Fischetti, M. V. / Laux, S. E. / Crabbe´, E. et al. | 1995
- 1088
-
An analytical model for short‐channel organic thin‐film transistorsTorsi, L. / Dodabalapur, A. / Katz, H. E. et al. | 1995
- 1094
-
Carrier lifetime in InP/InGaAs/InP by open‐circuit voltage and photoluminescence decayZemel, A. / Gallant, M. et al. | 1995
- 1101
-
Temperature dependence and effect of series resistance on the electrical characteristics of a polycrystalline diamond metal‐insulator‐ semiconductor diodeKang, W. P. / Davidson, J. L. / Gurbuz, Y. / Kerns, D. V. et al. | 1995
- 1108
-
Micro‐Raman and infrared reflectivity spectra of YBa2Cu3O7−δ deposited on LaAlO3 and stainless steel/inconel substratesChing‐Prado, E. / Pe´rez, W. / Katiyar, R. S. / Bist, H. D. / Soni, R. N. / Sathaiah, S. / Sinha, U. et al. | 1995
- 1108
-
Micro-Raman and infrared reflectivity spectra of YBa2Cu 3)O7 - d deposited on LaAlO3 and stainless steel-inconel substratesChing-Prado, E. et al. | 1995
- 1114
-
Pinning via intrinsic weak links: A possible scenario and applicationsSergeenkov, Sergei A. et al. | 1995
- 1123
-
Anisotropy of the critical current in silver sheathed (Bi,Pb)2Sr2Ca2Cu3O10 tapesHu, Q. Y. / Schalk, R. M. / Weber, H. W. / Liu, H. K. / Wang, R. K. / Czurda, C. / Dou, S. X. et al. | 1995
- 1131
-
Correlation of YBa2Cu3O7 step‐edge junction characteristics with microstructureHerrmann, K. / Kunkel, G. / Siegel, M. / Schubert, J. / Zander, W. / Braginski, A. I. / Jia, C. L. / Kabius, B. / Urban, K. et al. | 1995
- 1140
-
Variation of magnetic properties as a function of Mo content in the RFe12−xMox series and their nitrides (R=Y, Nd, Gd)Yang, Jun / Dong, Shengzhi / Mao, Weihua / Xuan, Ping / Liu, Zunxiao / Sun, Yunxi / Yang, Yingchang / Ge, Senlin et al. | 1995
- 1146
-
Angular dependence of the coercivities of Ba ferrite particulate samples: A comparison between theory and experimentsHan, D. H. / Luo, H. L. / Yang, Z. et al. | 1995
- 1146
-
Angular dependence of coerci vities of Ba ferrite particulate samples: A comparison between theory and experimentsHan, D.H. / Luo, H.L. / Yang, Z. et al. | 1995
- 1151
-
Initial interface formation study of the Mg/Si(111) systemAn, K. S. / Park, R. J. / Kim, J. S. / Park, C. Y. / Lee, S. B. / Abukawa, T. / Kono, S. / Kinoshita, T. / Kakizaki, A. / Ishii, T. et al. | 1995
- 1156
-
Coercivity and its dependence on the strength of alignment magnetic field in Nd‐Fe‐B sintered magnetsGao, Ruwei / Zhang, Deheng / Li, Hua / Jiang, Shouting / Zhou, Shouzeng / Li, Fobiao / Zhang, Lidong et al. | 1995
- 1160
-
Ferroelectric properties of Bi2VO5.5 thin films on LaAlO3 and SiO2/Si substrates with LaNiO3 base electrodeSatyalakshmi, K. M. / Varma, K. B. R. / Hegde, M. S. et al. | 1995
- 1165
-
Asymmetric polarization switching in triglycine sulfate crystals with free surfaceKugel, V. D. / Rosenman, G. / Shur, D. et al. | 1995
- 1171
-
Field‐induced phase switching and electrically driven strains in sol‐gel derived antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin layersSengupta, S. S. / Roberts, D. / Li, J.‐F. / Kim, M. C. / Payne, D. A. et al. | 1995
- 1178
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Observation of excitonic polariton and broadening of room‐temperature exciton in strained InGaAs/GaAs quantum wellsShen, W. Z. / Shen, S. C. / Tang, W. G. / Wang, S. M. / Andersson, T. G. et al. | 1995
- 1183
-
Optical properties of wurtzite CdSNinomiya, Susumu / Adachi, Sadao et al. | 1995
- 1191
-
Low‐temperature photoluminescence from bulk CdTe and Cd0.967Zn0.033TeLee, Jaesun / Giles, N. C. et al. | 1995
- 1196
-
Low‐level photomodulation of exciton absorption in CdTe single quantum wellsNaumov, A. / Mi, Donglin / Sturge, M. D. / Ge, Weikun / Dang, Le Si / Mariette, H. / Magnea, N. et al. | 1995
- 1203
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Dislocations in lattice‐mismatched wide‐gap II‐VI/GaAs heterostructures as laser light scatterers: Experiment and theoryRouleau, C. M. / Santana, C. J. / Jones, K. S. / Park, R. M. et al. | 1995
- 1210
-
Photoluminescence from modulation doped AlGaAs/ low‐temperature molecular beam epitaxy‐grown GaAs heterostructuresSchulte, D. / Subramanian, S. / Ungier, L. / Arthur, J. R. et al. | 1995
- 1214
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Electron density modulation effect in a quantum‐well infrared phototransistorRyzhii, V. / Ershov, M. et al. | 1995
- 1219
-
Energy transfer processes in Er3+‐ and Yb3+‐doped infrared upconversion materialsMita, Yoh / Yamamoto, Hajime / Katayanagi, Kenji / Shionoya, Shigeo et al. | 1995
- 1224
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Electron capture time measurements in GaAs/AlGaAs quantum‐well infrared photodetectors: Photoresponse saturation by a free‐electron laserDuboz, J. Y. / Costard, E. / Nagle, J. / Berset, J. M. / Ortega, J. M. / Ge´rard, J. M. et al. | 1995
- 1230
-
Influence of light soaking on surface‐ and bulk‐spin densities in hydrogenated amorphous siliconZhang, Qing / Kumeda, Minoru / Shimizu, Tatsuo et al. | 1995
- 1235
-
The low‐temperature infrared optical functions of SrTiO3 determined by reflectance spectroscopy and spectroscopic ellipsometryKamara´s, K. / Barth, K.‐L. / Keilmann, F. / Henn, R. / Reedyk, M. / Thomsen, C. / Cardona, M. / Kircher, J. / Richards, P. L. / Stehle´, J.‐L. et al. | 1995
- 1241
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Analytical thermal model of ultraviolet laser ablation with single‐photon absorption in the plumeTokarev, V. N. / Lunney, J. G. / Marine, W. / Sentis, M. et al. | 1995
- 1247
-
Spectroscopic analysis of plasma during rf magnetron sputtering of a YBCO target: Evidence for oxidation on the surface of the cathodeLec&celig;ur, Ph. / Mercey, B. / Murray, H. et al. | 1995
- 1254
-
Field emission from a silicon surface‐potential well based on an Airy function approachHuang, Qing‐An et al. | 1995
- 1259
-
Overheated metastable states in pulsed laser action on ceramicsMazhukin, V. I. / Smurov, I. / Flamant, G. et al. | 1995
- 1271
-
Reduced temperature growth of crystalline 3C‐SiC films on 6H‐SiC by chemical vapor deposition from silacyclobutaneYuan, C. / Steckl, A. J. / Chaudhuri, J. / Thokala, R. / Loboda, M. J. et al. | 1995
- 1274
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Laser ablation synthesis of lanthanide oxide clusters: Mechanisms and chemistryGibson, John K. et al. | 1995
- 1281
-
Mechanism of laser ablation for aqueous media irradiated under confined‐stress conditionsOraevsky, Alexander A. / Jacques, Steven L. / Tittel, Frank K. et al. | 1995
- 1291
-
Nucleation of oriented diamond particles on cobalt substratesLiu, Wei / Tucker, Denise A. / Yang, Peichun / Glass, Jeffrey T. et al. | 1995
- 1297
-
Temperature and concentration profiles in a low pressure methane process plasmaHa¨drich, S. / Pfelzer, B. / Doerk, T. / Jauernik, P. / Uhlenbusch, J. et al. | 1995
- 1303
-
Nuclear‐magnetic‐resonance characterization of doped SiO2 films used in integrated circuitsSchilling, Frederic C. / Steiner, Kurt G. / Obeng, Yaw S. et al. | 1995
- 1312
-
Role of alloying elements in the stability of nitrides in nitrogen‐ implanted α‐FeKopcewicz, M. / Jagielski, J. / Gawlik, G. / Grabias, A. et al. | 1995
- 1312
-
Role of alloying elements in the stability of nitrides in nitrogen-implanted alpha-FeKopcewicz, M. / Jagielski, J. / Gawlik, G. / Grabias, A. et al. | 1995
- 1312
-
Role of alloying elements in the stability of nitrides in nitrogen-implanted a-FeKopcewicz, M. et al. | 1995
- 1322
-
Electrical characteristics of epitaxial pn junction diodes fabricated on germanium‐boron‐doped siliconAng, S. S. et al. | 1995
- 1327
-
Light‐emitting diodes using n‐type conducting polymer: Poly(p‐pyridyl vinylene)Onoda, Mitsuyoshi et al. | 1995
- 1334
-
Absolute magnetometer based on the high‐frequency modulation of the kinetic inductance of a superconducting thin filmAyela, F. / Bret, J. L. / Chaussy, J. et al. | 1995
- 1342
-
Phase formation in Ni/InP contactsMohney, Suzanne E. / Chang, Y. Austin et al. | 1995
- 1348
-
Electron beam propagation in linearly polarized undulators: The effect of the anharmonicity on the spatial and phase‐space distributionsDattoli, G. / Ottaviani, P. L. et al. | 1995
- 1358
-
Electrical switching in Agl based fast ion conducting glasses: Possibility for newer applicationsVaidhyanathan, B. et al. | 1995
- 1358
-
Electrical switching in AgI based fast ion conducting glasses: Possibility for newer applicationsVaidhyanathan, B. / Rao, K. J. / Prakash, S. / Murugavel, S. / Asokan, S. et al. | 1995
- 1361
-
Optical matrix elements in [hhk]‐oriented quantum wiresYamaguchi, A. Atsushi / Usui, Akira et al. | 1995
- 1364
-
The Néel temperature of nanocrystalline chromiumFitzsimmons, M.R. et al. | 1995
- 1364
-
The Ne´el temperature of nanocrystalline chromiumFitzsimmons, M. R. / Eastman, J. A. / Robinson, R. A. / Lynn, J. W. et al. | 1995
- 1367
-
Modulation of the polarization state in an optical fiber coated with Langmuir–Blodgett filmsZhu, Rong / Wei, Yu / Scholl, Bernhard / Schmitt, Hans J. et al. | 1995
- 1370
-
Fluorinated amorphous carbon thin films grown by plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectricsEndo, Kazuhiko / Tatsumi, Toru et al. | 1995
- 1373
-
Beam waist changes in lithium niobate during Z‐scan measurementHenari, Fryad. Z. / Cazzini, Karl / El Akkari, Fathi / Blau, Werner J. et al. | 1995
- 1376
-
Preparation and electrical properties of Bi2S3 whiskersMizoguchi, H. / Hosono, H. / Ueda, N. / Kawazoe, H. et al. | 1995
- 1379
-
Self‐similarity in quasiperiodic Fibonacci superlattices in an in‐plane magnetic fieldBruno‐Alfonso, A. / Reyes‐Gomez, E. / Oliveira, L. E. / de Dios‐Leyva, M. et al. | 1995
- 1382
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Properties of infinite layer Ca1−xSrxCuO2 films oxygen doped by ion implantationWong, A. S. / Ma, Q. Y. / Dosanjh, P. / Carolan, J. F. / Hardy, W. N. et al. | 1995
- 1385
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Ga‐concentration dependence of magnetocrystalline anisotropy in Gd2Fe17−xGax compoundsCheng, Zhao‐hua / Shen, Bao‐gen / Liang, Bing / Zhang, Jun‐xian / Wang, Fang‐wei / Zhang, Shao‐ying / Zhao, Jian‐gao / Zhan, Wen‐shan et al. | 1995
- 1388
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The birefringence of the optically nonlinear crystal N‐methyl ureaBailey, R. T. / Cruickshank, F. R. / Pugh, D. / Sherwood, J. N. / Simpson, G. S. / Wilkie, S. et al. | 1995
- 1391
-
Optimized resonant tunneling light emitting diodesKindlihagen, A. / Willander, M. / Chao, K. A. et al. | 1995
- 1394
-
Effect of negative dc bias voltage on mechanical property of a‐C:H films deposited in electron cyclotron resonance plasmaKamata, Kiichiro / Inoue, Tohru / Sugai, Ken‐ichi / Saitoh, Hidetoshi / Maruyama, Kazunori et al. | 1995
- 1397
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International Conference on Diffusion in Materials| 1995
- 1398
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CUMULATIVE AUTHOR INDEX| 1995