3C-SiC single-crystal films grown on 6-inch Si substrates (English)
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In:
Physica Status Solidi (B) - Basic Research
;
202
, 1
;
335-358
;
1997
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ISSN:
- Article (Journal) / Print
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Title:3C-SiC single-crystal films grown on 6-inch Si substrates
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Contributors:Nagasawa, H. ( author ) / Yagi, K. ( author )
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Published in:Physica Status Solidi (B) - Basic Research ; 202, 1 ; 335-358
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Publisher:
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Publication date:1997
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Size:24 Seiten, 36 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:Si-Substrat , Umgebung (Umwelt) , Aufkohlen , epitaxiale Schicht , Wachstumsgeschwindigkeit , Precursor , Kristallinität , Durchstrahlungselektronenmikroskopie , Elektronenbeugung , Röntgenbeugung , Konzentration , Plane , Koaleszenz , elektrische Eigenschaft , Aufdampfen , Beschichten , Beschichtungsmethode , Carbid , Kohlenstoff , Keramik , Kristallisation , CVD-Beschichten , Beugung (Strahl)
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Source:
Table of contents – Volume 202, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 5
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Electronic Band Structure of SiC Polytypes: A Discussion of Theory and ExperimentLambrecht, W.R.L. et al. | 1997
- 35
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Polytypism and Properties of Silicon CarbideBechstedt, F. et al. | 1997
- 63
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On the Band Gap Variation in SiC PolytypesHaeringen, W.van et al. | 1997
- 81
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Shallow Donor Levels and the Conduction Band Edge Structures in Polytypes of SiCChen, An-Ban et al. | 1997
- 107
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Global Band Structure and Near-Band-Edge StatesWellenhofer Rössler, G. et al. | 1997
- 125
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First-Principles Calculations of Impurity States in 3C-SiCFukumoto, A. et al. | 1997
- 137
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Physical Vapor Transport Growth and Properties of SiC Monocrystals of 4H PolytypeAugustine, G. et al. | 1997
- 149
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SiC Seeded Crystal GrowthGlass, R.C. et al. | 1997
- 163
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Modified-Lely SiC Crystals Grown in (1100) and (1120) DirectionsTakahashi, J. et al. | 1997
- 163
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Modified-Lely SiC crystals grown in 1 anti 100 and 11 anti 20 directionsTakahashi, J. / Ohtani, N. et al. | 1997
- 177
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Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial LayersVodakov, Yu A. et al. | 1997
- 201
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Simulation of Sublimation Growth of SiC Single CrystalsKarpov, S.Yu et al. | 1997
- 221
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Cubic Silicon Carbide (3C-SiC): Structure and Properties of Single Crystals Grown by Thermal Decomposition of Methyl Trichlorosilane in HydrogenGorin, S.N. et al. | 1997
- 221
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Cubic silicon carbide (3C-SiC): structure and properties of single crystals grown by thermal decomposition of metal trichlorosilane in hydrogenGorin, S.N. / Ivanova, L.M. et al. | 1997
- 247
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Step-Controlled Epitaxial Growth of High-Quality SiC LayersKimoto, T. et al. | 1997
- 263
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Homoepitaxial VPE Growth of SiC Active LayersBurk Jr, A.A. et al. | 1997
- 281
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Silicon Carbide Epitaxy in a Vertical CVD Reactor: Experimental Results and Numerical Process SimulationRupp, R. et al. | 1997
- 305
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SiC Dopant Incorporation Control Using Site-Competition CVDLarkin, D.J. et al. | 1997
- 321
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Growth of SiC by "Hot-Wall" CVD and HTCVDKordina, O. et al. | 1997
- 335
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3C-SiC Single-Crystal Films Grown on 6-Inch Si SubstratesNagasawa, H. et al. | 1997
- 359
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Heterointerface Control and Epitaxial Growth of 3C-SiC on Si by Gas Source Molecular Beam EpitaxyFuyuki, T. et al. | 1997
- 379
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Homoepitaxial SiC Growth by Molecular Beam EpitaxyKern, R.S. et al. | 1997
- 405
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Simulations and Experiments of 3C-SiC-Si Heteroepitaxial GrowthKitabatake, M. et al. | 1997
- 421
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Atomic and Electronic Structure of SiC Surface from ab-initio CalculationsPollmann, J. et al. | 1997
- 421
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Atomic and electronic structure of SiC surfaces from ab-initio calculationsPollmann, J. / Krueger, P. / Sabisch, M. et al. | 1997
- 447
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Structure and Properties of Cubic Silicon Carbide (100) Surfaces: A ReviewBermudez, V.M. et al. | 1997
- 475
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Atomic Structure of Hexagonal SiC SurfacesStarke, U. et al. | 1997
- 501
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Morphology, Atomic and Electronic Structure of 6H-SiC(0001) SurfacesMårtensson, P. et al. | 1997
- 529
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Process-Induced Morphological Defects in Epitaxial CVD Silicon CarbidePowell, J.A. et al. | 1997
- 549
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Surface Studies on SiC as Related to ContactsBozack, M.J. et al. | 1997
- 581
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The Physics of Ohmic Contacts to SiCCrofton, J. et al. | 1997
- 605
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A Review of SiC Reactive Ion Etching in Fluorinated PlasmasYih, P.H. et al. | 1997
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Preface 3| 1997