Electrical activation of boron-implanted silicon during rapid thermal annealing (English)
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In:
Applied Physics A (Solids and Surfaces)
;
A47
, 4
;
359-366
;
1988
- Article (Journal) / Print
-
Title:Electrical activation of boron-implanted silicon during rapid thermal annealing
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Additional title:Elektrische Aktivierung von borimplantiertem Silicium waehrend des schnellen thermischen Temperns
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Contributors:Landi, E. ( author ) / Armigliato, A. ( author ) / Solmi, S. ( author ) / Kogler, R. ( author ) / Wieser, E. ( author )
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Published in:Applied Physics A (Solids and Surfaces) ; A47, 4 ; 359-366
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Publisher:
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Publication date:1988
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Size:8 Seiten, 19 Quellen
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:ELEMENTHALBLEITER , AMORPHER HALBLEITER , BOR , LADUNGSTRAEGERDICHTE , CHEMISCHE AUSSCHEIDUNG , SILICIUM , AMORPHER STOFF , HALOGENGLUEHLAMPE , ZEITKONSTANTE , LOESLICHKEIT , REKRISTALLISATION , IONENIMPLANTATION , WAERMEBEHANDLUNG , KRISTALLINER STOFF , VERUNREINIGUNG , TEMPERN , RAPID THERMAL ANNEALING
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Source: