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Photo-assisted chemical vapor deposition (Photo-CVD) and etching techniques have been developed for application to InP MIS FETs. Photo-assisted gas phase etching of InP at a relatively low temperature (150-300 C) was carried out using PCl3 as etching gas. Auger electron spectroscopic analysis, showed the surface after PCl3 etching was more contaminated than before. More detailed study revealed the etched surface was so reactive that it was easily re-contaminated from ambient gases during the etching owing to the poor vacuum of the CVD chamber. Also, low temperature deposition of phosphorus nitride (PNx) film onto InP substrates was studied. The 'reactor', which was used for the gas enclosure during deposition, showed the effectiveness for the deposition of uniform PNx film thickness. However the film had lower electrical resistivity compared to that deposited without the 'reactor'.