Experimental study of the intrinsic defects in doped bismuth telluride by electrical methods (English)
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In:
Semiconductors
;
28
, 9
;
899-900
;
1994
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ISSN:
- Article (Journal) / Print
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Title:Experimental study of the intrinsic defects in doped bismuth telluride by electrical methods
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Additional title:Experimentelle Untersuchung der Eigenleitungsdefekte in dotiertem Wismuthtellurid mittels elektrischer Verfahren
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Contributors:Abaidulina, T.G. ( author ) / Zhitinskaya, M.K. ( author ) / Nemov, S.A. ( author ) / Ravich, Y.I. ( author )
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Published in:Semiconductors ; 28, 9 ; 899-900
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Publisher:
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Publication date:1994
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Size:2 Seiten, 10 Quellen
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ISSN:
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Coden:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 28, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 858
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Instability due to thermocapillary and thermoelectric effects in liquid semiconductorsEidel'man, E. D. et al. | 1994
- 863
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Ultrasonically induced transformation of DX centers in AlGaAs:SiBelyaev, A. E. / Von Bardeleben, H. J. / Oborina, E. I. / Ryabchenko, Y. S. et al. | 1994
- 866
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Optical phonons and ordering of the crystal lattice of In~xGa~1~-~xAs solid solutionsMintairov, A. M. / Mazurenko, D. M. / Sinitsin, M. A. / Yavich, B. S. et al. | 1994
- 872
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Study of the dynamic conductance of a surface 2D superlattice on GaAs/AlGaAs by a contactless microwave method in a magnetic fieldBuldygin, A. F. / Magarill, L. I. / Panaev, I. A. / Studenikin, S. A. et al. | 1994
- 876
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Negative-capacitance effect in Ni-TiO~2-p-Si heterostructuresBoltaev, A. P. / Burbaev, T. M. / Kalyuzhnaya, G. A. / Kurbatov, V. A. et al. | 1994
- 880
-
Electroluminescence quantum yield in GaInAsSb/GaSb and AlGaAsSb/GaInAsSb p-n structuresYunusov, M. S. / Abdurakhmanov, Y. Y. / Ob"edkov, E. V. / Oksengendler, B. L. et al. | 1994
- 884
-
Surface UV photoluminescence of silicon carbide crystalsDanishevski, A. M. / Rogachev, A. Y. / Chelnokov, V. E. et al. | 1994
- 887
-
Pseudodoped amorphous silicon as a material for vidicon targetsGolikova, O. A. / Kazanin, M. M. / Petrov, I. N. et al. | 1994
- 890
-
Temperature dependence of the hole thermal emf in gapless HgCdTe and HgMnTe semiconductorsShelushinina, N. G. / Neiifel'd, E. A. / Domanskaya, L. I. / Gorodilov, N. A. et al. | 1994
- 895
-
Development and study of the optical properties of InGaAs/GaAs quantum wiresBert, N. A. / Gurevich, S. A. / Gladysheva, L. G. / Kognovitskii, S. O. et al. | 1994
- 899
-
Experimental study of the intrinsic defects in doped bismuth telluride by electrical methodsAbaidulina, T. G. / Zhitinskaya, M. K. / Nemov, S. A. / Ravich, Y. I. et al. | 1994
- 901
-
Effect of the isovalent antimony dopant on the formation of electrically active defects in n-type GaAs grown by means of liquid-phase epitaxy from a bismuth molten solutionSamoilov, V. A. / Yakusheva, N. A. / Prints, V. Y. et al. | 1994
- 906
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Electrical and photoelectric properties of PbTe(Ga) bombarded by electronsSkipetrov, E. P. / Nekrasova, A. N. / Pelekhov, D. V. / Ryabova, L. I. et al. | 1994
- 912
-
Study of hot electron transient transport in quantum wires by the Monte Carlo methodOsadchy, V. M. et al. | 1994
- 917
-
Generalized model of electrical conductivity in polycrystalline semiconductorsDoshchanov, K. M. et al. | 1994
- 923
-
Theory of geminate recombination in disordered organic semiconductorsPlyukhin, A. V. et al. | 1994
- 926
-
Experimental study of the nature of deep-level centers in ion-implanted gallium phosphideKol'tsov, G. I. / Yurchuk, S. Y. et al. | 1994
- 929
-
Cathodoluminescence spectra of ZnIn~2S~4 single crystalsZhitar, V. F. / Machuga, A. I. / Arama, E. D. et al. | 1994
- 931
-
Temperature dependence of the critical dose of defects for the transition of silicon to the amorphous state as a result of ion implantationGusakov, G. A. / Novikov, A. P. / Anishchik, V. M. et al. | 1994