Organic molecular beam deposition: Technology and applications in electronics and photonics (English)
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In:
Materials Science and Engineering, Part B (Solid-State Materials for Advanced Technology)
;
51
, 1-3
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58-65
;
1998
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ISSN:
- Article (Journal) / Print
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Title:Organic molecular beam deposition: Technology and applications in electronics and photonics
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Contributors:
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Published in:
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Publisher:
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Publication date:1998
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Size:8 Seiten, 13 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 51, Issue 1-3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Recent advances in mid-infrared (3-6 my m) emittersBiefeld, R.M. / Allerman, A.A. / Kurtz, S.R. et al. | 1998
- 1
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Recent advances in mid-infrared (3-6 mm) emittersBiefeld, R.M. et al. | 1998
- 1
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Recent advances in mid-infrared (3-6 m) emittersBiefeld, R. M. / Allerman, A. A. / Kurtz, S. R. et al. | 1998
- 9
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Near field optical spectroscopy of resonant tunnelling light-emittersMielants, Mieke et al. | 1998
- 12
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Novel type II strained layer superlattices for long wavelength infrared detectorsTalwar, D.N. et al. | 1998
- 18
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Blue-green microcavity light emitting diode with monolithic MgZnSSe-ZnSSe Bragg reflectorsUusimaa, P. et al. | 1998
- 22
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Optical properties and lasing of ZnMgSSe-ZnSSe-ZnSe heterostructures grown by MOVPEGurskii, A.L. et al. | 1998
- 26
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RT exciton waveguiding and lasing in submonolayer CdSe-(Zn, Mg)(S, Se) structuresKrestnikov, I.L. et al. | 1998
- 30
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Vertical carrier transport in InP-based quantum well laser structuresMarcinkevicius, S. et al. | 1998
- 34
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Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diodeSchineller, B. et al. | 1998
- 39
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Multiwafer MOVPE technology for low dimensional Ga-Al-In-N structuresBeccard, R. et al. | 1998
- 44
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Investigation of inhomogeneities in (Al, Ga, In)N heterostructures by STEM and cathodoluminescenceLakner, H. et al. | 1998
- 53
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First principles studies of point defects and impurities in cubic boron nitrideCastineira, J.L.P. et al. | 1998
- 58
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Organic molecular beam deposition: technology and applications in electronics and photonicsBöhler, Achim et al. | 1998
- 66
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Review of thin film technology in automobile industrySuzui, Motofumi et al. | 1998
- 72
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Gigahertz microcavity light emitters using resonant tunneling diodesVan Hoof, C. et al. | 1998
- 76
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Performance and design of vertical, ballistic, heterostructure field-effect transistorsWernersson, Lars-Erik et al. | 1998
- 81
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Photon assisted hypersonic phonon emission from terahertz-driven two-dimensional electron gasesXu, W. et al. | 1998
- 85
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Effect of temperature on GaAs-AlGaAs multiple quantum well solar cellsAperathitis, E. et al. | 1998
- 90
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Light emitting diode arrays for consumer and medical applicationsRys, Andrew et al. | 1998
- 94
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Lateral-junction light emitting devices grown by molecular beam epitaxy on GaAs (311)A-oriented substratesVaccaro, P.O. et al. | 1998
- 99
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Novel spontaneous emission control using 3-dimensional photonic bandgap crystal cavityHirayama, Hideki et al. | 1998
- 103
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Si and C delta-doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlatticesJagadish, C. / Li, G. / Johnston, M.B. / Gal, M. et al. | 1998
- 103
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Si and C d-doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlatticesJagadish, C. et al. | 1998
- 103
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Si and C -doping of GaAs grown by metal organic vapour phase epitaxy for fabrication of nipi doping superlatticesJagadish, C. / Lia, G. / Johnston, M. B. / Gal, M. et al. | 1998
- 106
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Gain characteristics of InP-InGaAs heterostructure avalanche photodiodeHyun, Kyung-Sook et al. | 1998
- 110
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GaAs-AlGaAs based electrically tunable RCE photodiodeWaclawek, J. et al. | 1998
- 114
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Temperature effects in semiconductor quantum dot lasersFafard, S. et al. | 1998
- 118
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InAs dots grown on InP (001) by droplet hetero-epitaxy using OMVPENonogaki, Y. et al. | 1998
- 122
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Time-resolved spectroscopy of InAs quantum dots using one-side modulation-doping technique: renormalization and screeningIn Lee, Joo et al. | 1998
- 127
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New approach to ZnCdSe quantum dotsZhang, B.P. / Yasuda, T. / Wang, W.X. / Segawa, Y. / Edamatsu, K. / Itoh, T. / Yaguchi, H. / Onabe, K. et al. | 1998
- 127
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A new approach to ZnCdSe quantum dotsZhang, B.P. et al. | 1998
- 132
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The mechanism of light emission from porous silicon: where are we 7 years on?Calcott, P.D.J. et al. | 1998
- 141
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Charge injection into porous silicon electroluminescent devicesWakefield, G. et al. | 1998
- 146
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Electronic structure of nanocrystalline-amorphous silicon: a novel quantum size effectNomura, S. et al. | 1998
- 150
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Fabrication and characterisation of ultra sharp silicon field emittersHuq, S.E. et al. | 1998
- 150
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Fabrication and characterization of ultra sharp silicon field emittersHuq, S.E. / Grayer, G.H. / Moon, S.W. / Prewett, P.D. et al. | 1998
- 154
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Size control of Si nanocrystallites formed in amorphous Si matrix by Er-dopingZhao, Xinwei et al. | 1998
- 158
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Splitting of porous silicon microcavity mode due to the interaction with Si-H vibrationsMattei, G. et al. | 1998
- 162
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Two ways of porous Si photoluminescence excitationTorchinskaya, T.V. et al. | 1998
- 166
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Selective epitaxial growth of strained SiGe-Si for optoelectronic devicesVescan, L. et al. | 1998
- 170
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Molecular beam epitaxy of SiGe heterostructures using a newly designed Si effusion cellYaguchi, H. et al. | 1998
- 173
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Proximal probe-based fabrication of nanometer-scale devicesCampbell, P.M. et al. | 1998
- 178
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Characterization of quantum structures by atomic-force microscopyWüllner, D. et al. | 1998
- 188
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Characterisation of InGaAs-InP microscopic Hall probe arrays with a 2DEG active layerCambel, V. et al. | 1998
- 188
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Characterization of InGaAs/InP microscopic Hall probe arrays with a 2DEG active layerCambel, V. / Gregusova, D. / Elias, P. / Hasenoehrl, S. / Olejnikova, B. / Novak, J. / Schapers, T. / Neurohr, K. / Fox, A. et al. | 1998
- 192
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Possibility of subsurface investigations by scanning tunnelling microscopeChorniy, V.Z. et al. | 1998
- 197
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Observation of surface potential at nanometer scale by electrostatic force microscopy (EFM) with large signalsLeveque, G. et al. | 1998
- 202
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Mobility (106 cm2 V-1 s-1) of 2DEGs, 30 nm from ex situ patterned GaAs regrowth interfacesBurke, T.M. et al. | 1998
- 207
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Fabrication of independently contacted and tuneable 2D-electron-hole systems in GaAs-AlGaAs double quantum wellsRubel, H. et al. | 1998
- 212
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Experimental and theoretical investigations of clusters in the magneto-fingerprints of Sinai billiardsTaylor, R.P. et al. | 1998
- 216
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Observation of a new type of giant magnetoresistance with possible sensor applicationsOverend, N. et al. | 1998
- 219
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Characteristics of GaAs-AlAs superlattice structures grown on (311) oriented GaAs substrates by molecular beam epitaxyYoon, S.F. et al. | 1998
- 224
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Self-assembled, very long II-VI semiconductor quantum wiresZhang, B.P. et al. | 1998
- 229
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Effects of growth interruption on uniformity of GaAs quantum wires formed on vicinal GaAs(110) surfaces by MBENakashima, Hisao et al. | 1998
- 233
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Absence of ground state PLE peak in crescent-shaped AlGaAs-GaAs quantum wire superlatticesWang, Xue-Lun et al. | 1998
- 238
-
Hydride vapour phase epitaxy for nanostructuresRodriguez Messmer, E. et al. | 1998
- 242
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CAD tools and foundries to boost microsystems developmentCourtois, B. et al. | 1998
- 254
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Micro and nanotechnologies: a challenge on the way forward to new marketsBenoit, Jean et al. | 1998
- 258
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Micromachining and mechanical properties of GaInAs-InP microcantileversMounaix, P. et al. | 1998
- 263
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Characterization of a low-voltage actuated gold microswitchAttia, P. / Tremblay, G. / Laval, R. / Hesto, P. et al. | 1998
- 263
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Characterisation of a low-voltage actuated gold microswitchAttia, P. et al. | 1998
- 267
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Bulk micromachining characterization of 0.2 mm HEMT MMIC technology for GaAs MEMS designRibas, R.P. et al. | 1998
- 267
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Bulk micromachining characterization of 0.2 my m HEMT MMIC technology for GaAs MEMS designRibas, R.P. / Leclercq, J.L. / Karam, J.M. / Courtois, B. / Viktorovitch, P. et al. | 1998
- 267
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Bulk micromachining characterization of 0.2 m HEMT MMIC technology for GaAs MEMS designRibas, R. P. / Leclercq, J. L. / Karam, J. M. / Courtois, B. / Viktorovitch, P. et al. | 1998
- 274
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Integration of a SALICIDE process for deep-submicron CMOS technology: effect of nitrogen-argon-amorphized implant on SALICIDE formationHo, C.S. et al. | 1998
- 274
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Integration of SALICIDE process for deep-submicron CMOS technology: Effect of nitrogen/argon-amorphized implant on SALICIDE formationHo, C.S. / Pey, K.L. / Wong, H. / Karunasiri, R.P.G. / Chua, S.J. / Lee, K.H. / Chan, L.H. et al. | 1998