Simulators of thin film deposition for silicon device processing (English)
- New search for: Gilmer, G.H.
- New search for: Baumann, F.H.
- New search for: Diaz de la Rubia, T.
- New search for: Gilmer, G.H.
- New search for: Baumann, F.H.
- New search for: Diaz de la Rubia, T.
In:
Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits, 1998, MRS Spring Meeting, 1998
;
119
;
1998
-
ISBN:
-
ISSN:
- Conference paper / Print
-
Title:Simulators of thin film deposition for silicon device processing
-
Contributors:
-
Published in:
-
Publisher:
- New search for: Materials Research Society (MRS)
-
Place of publication:Warrendale
-
Publication date:1998
-
Size:1 Seite
-
ISBN:
-
ISSN:
-
Coden:
-
Type of media:Conference paper
-
Type of material:Print
-
Language:English
-
Keywords:
-
Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
-
Interconnection Limits on XXI Century Gigascale Integration (GSI)Meindl, J. D. / Materials Research Society et al. | 1998
- 11
-
Power Supply Distribution and Other Wiring Issues for Deep-Submicron IC'sLynch, W. T. / Arledge, L. A. / Materials Research Society et al. | 1998
- 29
-
Multilevel Interconnection Technologies and Future Requirements for Logic ApplicationsBrillouet, M. / Materials Research Society et al. | 1998
- 39
-
Copper ULSI Interconnect TechnologyEdelstein, D. / Materials Research Society et al. | 1998
- 41
-
Integration of multi-level copper metallization into a high performance sub-0.25 my M technologyVenkatraman, R. / Jain, A. / Farkas, J. / Mendonca, J. / Hamilton, G. / Capasso, C. / Denning, D. / Simpson, C. / Rogers, B. / Frisa, L. et al. | 1998
- 41
-
Integration of Multi-Level Copper Metallization into a High-Performance Sub-0.25 m TechnologyVenkatraman, R. / Jain, A. / Farkas, J. / Mendonca, J. / Materials Research Society et al. | 1998
- 53
-
Scaling and Integration of High-Performance InterconnectsYang, S. / Materials Research Society et al. | 1998
- 65
-
Sub-Quarter Micron Metallization Using Ionized Metal Plasma TechnologyChen, F. / Xu, Z. / Sinha, A. / Materials Research Society et al. | 1998
- 75
-
Barriers for Copper InterconnectionsWong, S. S. / Ryu, C. / Lee, H. / Kwon, K.-W. / Materials Research Society et al. | 1998
- 83
-
Materials and Devices for Silicon On-Chip Optical InterconnectBallantyne, J. M. / Materials Research Society et al. | 1998
- 91
-
Texture Control and Electromigration Performance in Al-Based and Cu-Based Layered InterconnectsKageyama, M. / Abe, K. / Harada, Y. / Onoda, H. / Materials Research Society et al. | 1998
- 103
-
Al Dual Damascene Technology for Multilevel InterconnectsKlkuta, K. / Materials Research Society et al. | 1998
- 105
-
Crystallographic Texture and Phase Formation in Blanket Ti/TiN/AlCu FilmsDeHaven, P. W. / Clevenger, L. A. / Schnabe, R. F. / Weber, S. J. / Materials Research Society et al. | 1998
- 107
-
Microstructure and Lifetime Study of Al/Y FilmsVedula, L. / Pillai, V. / Nimmagadda, V. S. / Singh, R. / Materials Research Society et al. | 1998
- 113
-
Investigation of the Homovalent Impurity in Aluminum to Form Alloys With Enhanced Interconnect ReliabilityKailasam, S. K. / Murarka, S. P. / Glicksman, M. E. / Merchant, S. M. / Materials Research Society et al. | 1998
- 119
-
Simulators of Thin Film Deposition for Silicon Device ProcessingGilmer, G. H. / Baumann, F. H. / Diaz de la Rubia, T. / Materials Research Society et al. | 1998
- 121
-
Study of Factor and Interaction Effects During Programmed Rate Chemical Vapor Deposition of AluminumYang, D. / Jonnalagadda, R. / Rogers, B. R. / Hillman, J. T. / Materials Research Society et al. | 1998
- 127
-
Monte Carlo Atomistic Simulation of Polycrystalline Aluminum DepositionRubio, J. E. / Jaraiz, M. / Bailon, L. A. / Barbolla, J. / Materials Research Society et al. | 1998
- 133
-
Comparison of the Electromigration Behavior of Al(MgCu) With Al(Cu) and Al(SiCu)Li, H. / Witvrouw, A. / Jin, S. / Bender, H. / Materials Research Society et al. | 1998
- 139
-
Imaging Spatial Variations in Resistance Along InterconnectsWen, Q. / Clarke, D. R. / Materials Research Society et al. | 1998
- 141
-
Debonding of Interfaces in Multilayer Interconnect StructuresLane, M. / Ni, W. / Dauskardt, R. H. / Ma, Q. / Materials Research Society et al. | 1998
- 145
-
Growth, Patterning and Microelectronic Applications of Epitaxial CobaltDisilicideMantl, S. / Kappius, L. / Antons, A. / Loeken, M. / Materials Research Society et al. | 1998
- 157
-
Improved Thermal Stability of Ultrathin CoSi~2 Layers by Oxygen AnnealingTung, R. T. / Ohmi, S. / Materials Research Society et al. | 1998
- 163
-
Nanopatterning of Thin CobaltDisilicide Layers by Local OxidationKlinkhammer, F. / Kappius, L. / Antons, A. / Dolle, M. / Materials Research Society et al. | 1998
- 165
-
Thickness Effects in the Reaction of Cobalt With Silicon-Germanium AlloysBoyanov, B. I. / Goeller, P. T. / Sayers, D. E. / Nemanich, R. J. / Materials Research Society et al. | 1998
- 171
-
Silicide Technology in Deep Submicron RegimeSuguro, K. / Iinuma, T. / Ohuchi, K. / Miyashita, K. / Materials Research Society et al. | 1998
- 179
-
Integration of NiSi Salicide for Deep Submicron CMOS TechnologiesLin, X. W. / Ibrahim, N. / Topete, L. / Pramanik, D. / Materials Research Society et al. | 1998
- 185
-
Morphology of NiSi Film on Si(100): Role of the Interface StrainMaillard-Schaller, E. / Boyanov, B. I. / English, S. / Nemanich, R. J. / Materials Research Society et al. | 1998
- 191
-
Formation and Thermal Stability of Nd~0~.~3~2Y~0~.~6~8Si~1~.~7 Layers Formed by Channeled Ion Beam SynthesisWu, M. F. / Vantomme, A. / Hogg, S. / Pattyn, H. / Materials Research Society et al. | 1998
- 197
-
Growth and Characterization of Self-Aligned Erbium Silicide on N-Type, (100) Oriented SiliconDas, S. R. / LeBrun, L. / Sproule, G. I. / Materials Research Society et al. | 1998
- 201
-
Low-Temperature Formation of C54 TiSi~2 By-Passing the C49 Phase: Effect of Si Crystallinity, Metallic Impurities and Applications to 0.10 m CMOSKittl, J. A. / Gribeiyuk, M. A. / Samavedam, S. B. / Hong, Q. Z. / Materials Research Society et al. | 1998
- 201
-
Low temperature formation of C54 TiSi2 bypassing the C49 phase: effect of Si crystallinity, metallic impurities and applications to 0.10 my m CMOSKittl, J.A. / Gribelyuk, M.A. / Samavedam, S.B. / Hong, Q.Z. / Yu, N. / Rodder, M. et al. | 1998
- 207
-
Mechanism of Narrow Line Effect in TiSi~2 Films on Highly As-Doped Diffusion LayersIshida, K. / Wakabayashi, H. / Mogami, T. / Materials Research Society et al. | 1998
- 213
-
C49-TiSi~2 Epitaxial Orientation Dependence of the C49-to-C54 Phase Transformation RateNakamura, T. / Ikeda, K. / Tomita, H. / Komiya, S. / Materials Research Society et al. | 1998
- 219
-
Kinetics of the C49-C54 Transformation in Patterned and Blanket TiSi~2 Films: A ComparisonLa Via, F. / Privitera, S. / Grimaldi, M. G. / Raineri, V. / Materials Research Society et al. | 1998
- 225
-
Suppression of the phase transition and agglomeration of TiSi2 by addition of Zr elementYoon, Sanghyun / Jeon, Hyeongtag et al. | 1998
- 225
-
A Suppression of the Phase Transition and Agglomeration of TiSi~2 by Addition of Zr ElementYoon, S. / Jeon, H. / Materials Research Society et al. | 1998
- 231
-
Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide on Arsenic Implanted SiliconFang, H. / Oeztuerk, M. C. / Seebauer, E. G. / Materials Research Society et al. | 1998
- 239
-
Control and impact of processing ambient during RTPMaex, K. / Kondoh, E. / Lauwers, A. / DePotter, M. / Prost, J. et al. | 1998
- 239
-
The Control and Impact of Processing Ambient During RTPMaex, K. / Kondoh, E. / Lauwers, A. / DePotter, M. / Materials Research Society et al. | 1998
- 241
-
New Approaches for Formation of Ultra-Thin PtSi Layers for Infrared ApplicationsDonaton, R. A. / Jin, S. / Bender, H. / Zagrebnov, M. / Materials Research Society et al. | 1998
- 243
-
Is Selective CVD an Improvement for the Titanium Silicide Process in Sub-Quarter Micron Technology? A Phase Formation Study Using X-ray DiffractionRoy, R. / Cabral, C. / Lavoie, C. / Jordan-Sweet, J. / Materials Research Society et al. | 1998
- 245
-
A Novel Low-Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 m CMOS DevicesRen, L. P. / Liu, P. / Pan, G. Z. / Woo, J. C. S. / Materials Research Society et al. | 1998
- 245
-
Novel low temperature self-aligned Ti silicide technology for sub-0.18 my m CMOS devicesRen, L.P. / Liu, P. / Pan, G.Z. / Woo, J.C.S. et al. | 1998
- 251
-
Process Design and Integration of Salicide and Source/Drain Process Modules for Improved Device PerformanceApte, P. P. / Saxena, S. / Rao, S. / Vasanth, K. / Materials Research Society et al. | 1998
- 253
-
A Study of Transistor Optimization in a 0.25 Micron CMOS Flow Using S/D and Silicide Process Modules and Their InteractionsVasanth, K. / Apte, P. / Davis, J. / Saxena, S. / Materials Research Society et al. | 1998
- 255
-
Optimization of Ti and Co Self-Aligned Silicide RTP for 0.10 m CMOSKittl, J. A. / Hong, Q. Z. / Yang, H. / Yu, N. / Materials Research Society et al. | 1998
- 255
-
Optimization of Ti and Co self-aligned silicide RTP for 0.10 my m CMOSKittl, J.A. / Hong, Q.Z. / Yang, H. / Yu, N. / Rodder, M. / Apte, P.P. / Shiau, W.T. / Chao, C.P. / Breedijk, T. / Pas, M.F. et al. | 1998
- 263
-
Capacitance-Voltage, Current Voltage, and Thermal Stability of Copper Alloyed with Aluminum or MagnesiumSuwwan de Felipe, T. / Murarka, S. P. / Bedell, S. / Lanford, W. A. / Materials Research Society et al. | 1998
- 269
-
Properties of Cu~3Ge Films for Contacts to Si and SiGe and Cu MetallizationBorek, M. A. / Oktyabrsky, S. / Aboelfotoh, M. O. / Narayan, J. / Materials Research Society et al. | 1998
- 275
-
Copper Electroplating for Damascene ULSI InterconnectsDubin, V. M. / Lopatin, S. / Chen, S. / Cheung, R. / Materials Research Society et al. | 1998
- 281
-
Homogenization of the Bilayers of Cu-Al Alloy and Pure Copper to Produce Cu-0.3 at.% Al Alloy FilmsWang, P.-I. / Murarka, S. P. / Bedell, S. / Lanford, W. A. / Materials Research Society et al. | 1998
- 287
-
Extendibility of Cu Damascene to 0.1 m Wide InterconnectionsHu, C.-K. / Lee, K. Y. / Gignac, L. / Rossnagel, S. M. / Materials Research Society et al. | 1998
- 287
-
Extendibility of Cu damascene to 0.1 my m wide interconnectionsHu, C.K. / Lee, K.Y. / Gignac, L. / Rossnagel, S.M. / Uzoh, C. / Chan, K. / Roper, P. / Harper, J.M.E. et al. | 1998
- 293
-
Microstructure and Texture of Electroplated Copper in Damascene StructuresGross, M. E. / Lingk, C. / Siegrist, T. / Coleman, E. / Materials Research Society et al. | 1998
- 299
-
Finite element modeling for interconnect materials and structuresBassman, L. / Pinsky, P.M. / Deal, M. et al. | 1998
- 299
-
Finite Element Modelling for Interconnect Materials and StructuresBassman, L. / Pinsky, P. / Deal, M. / Materials Research Society et al. | 1998
- 301
-
MOCVD of Copper From the Solution of New and Liquid Precursor (hfac)Cu(1-pentene)Shin, H.-K. / Cho, Y.-H. / Yoo, D.-J. / Shin, H.-J. / Materials Research Society et al. | 1998
- 303
-
Ambient Dependence of Agglomeration Stability of Cu/Ta FilmsHartman, J. W. / Atwater, H. A. / Hashim, I. / Chin, B. / Materials Research Society et al. | 1998
- 309
-
Sensitive Analysis of Deposition Chemistry of Cu From (hfac)Cu(tmvs) Using Well-Characterized Test StructureChae, Y. K. / Shimogaki, Y. / Komiyama, H. / Materials Research Society et al. | 1998
- 315
-
Solution Delivery for Copper CVD Using Cu(hfac)~2 ReductionZeng, C. / Borgharkar, N. S. / Griffin, G. L. / Fan, H. / Materials Research Society et al. | 1998
- 321
-
Effect of Oxygen on the Degradation of Ti-Si-N Diffusion Barriers in Cu MetallizationMcArthur, W. F. / Ring, K. M. / Morgan, B. / Hurst, Q. / Materials Research Society et al. | 1998
- 331
-
Simple Co salicide process using silicidation by N2/H2 RTASekiguchi, M. / Moriwaki, M. / Fujii, S. / Mayumi, S. et al. | 1998
- 331
-
A Simple Co Salicide Process Using Silicidation by N~2/H~2 RTASekiguchi, M. / Moriwaki, M. / Fujii, S. / Mayumi, S. / Materials Research Society et al. | 1998
- 337
-
Atomic Layer Deposition of TiN Thin Films by Sequential Introduction of Ti Precursor and NH~3Min, J.-S. / Son, Y.-W. / Kang, W.-G. / Kang, S.-W. / Materials Research Society et al. | 1998
- 343
-
Effect of impurities in TiN film when used as MOS gate electrodesYang, H. / Hu, J.C. / Lu, J.P. / Brown, G.A. / Rotondara, A.L.P. / Luttmer, J.D. / Magel, L.K. / Liu, H.Y. / Chen, P.J. et al. | 1998
- 343
-
The Effect of Impurities in TiN Film When Used as MOS Gate ElectrodesYang, H. / Hu, J. C. / Lu, J. P. / Brown, G. A. / Materials Research Society et al. | 1998
- 345
-
Formation of TiSi~2 Thin Films From Chemical Vapor Deposition Using TiI~4Hwa Sung Rhee / Tae Woong Jang / Jong Tae Baek / Byung Tae Ahn / Materials Research Society et al. | 1998
- 351
-
Pre-Treatment Effect on Aluminum Thin Films Deposition From CVD Using Dimethylethylamine AlaneTae Woong Jang / Hwa Sung Rhee / Byung Tae Ahn / Materials Research Society et al. | 1998
- 357
-
Etching of Platinum Thin Films by High Density Ar/Cl~2/HBr PlasmaKim, C.-I. / Kim, N.-H. / Chang, E.-G. / Kwon, K.-H. / Materials Research Society et al. | 1998
- 363
-
Kelvin Test Structure Modelling of Metal-Silicide-Silicon ContactsReeves, G. K. / Holland, A. S. / Leech, P. W. / Materials Research Society et al. | 1998
- 363
-
Kelvin test structure modeling of metal-silicide-silicon contactsReeves, G.K. / Holland, A.S. / Leech, P.W. et al. | 1998
- 369
-
A Main Factor Determining the Uniform Step Coverage in Chemical Vapor DepositionChee Burm Shin / Gyeong Soon Hwang / Materials Research Society et al. | 1998
- 369
-
Main factor determining the uniform step coverage in chemical vapor depositionShin, Chee Burm / Hwang, Gyeong Soon et al. | 1998
- 375
-
The Influence of Capping Layer Type on Cobalt Salicide Formation in Films and Narrow LinesBesser, P. R. / Lauwers, A. / Roelandts, N. / Maex, K. / Materials Research Society et al. | 1998
- 375
-
Influence of capping layer type on cobalt salicide formation in films and narrow linesBesser, P.R. / Lauwers, A. / Roelandts, N. / Maex, K. / Blum, W. / Alvis, R. / Stucchi, M. / De Potter, M. et al. | 1998
- 381
-
Effect of Lateral Dimension Scaling on Thermal Stability of Thin CoSi~2 Layers on Polysilicon Implanted With SiLa Via, F. / Alberti, A. / Grimaldi, M. G. / Ravesi, S. / Materials Research Society et al. | 1998
- 387
-
Doping Influence on TiSi~2 C49-C54 Conversion Kinetics by Micro-Raman SpectroscopyMeinardi, F. / Quilici, S. / Moro, L. / Queirolo, G. / Materials Research Society et al. | 1998
- 393
-
Theoretical Reactor Design from the Simple Tubular Reactor Analysis for WSix CVD ProcessChae, Y. K. / Egashira, Y. / Shimogaki, Y. / Sugawara, K. / Materials Research Society et al. | 1998
- 399
-
Analysis of Copper and Low-K Dielectric Interconnect System for 0.18-m TechnologyLin, X. W. / Hui, K. / Ghanderhari, K. / Bothra, S. / Materials Research Society et al. | 1998
- 399
-
Analysis of copper and low-k dielectric interconnect system for 0.18-my m technologyLin, X.W. / Hui, K. / Ghanderhari, K. / Bothra, S. / Pramanik, D. / Findley, P. et al. | 1998
- 401
-
Ion Beam Induced Metallorganic Chemical Vapor Deposition of Titanium Nitride Films as a Diffusion Barrier Between Cu and SiPark, K.-C. / Kim, S.-H. / Kim, K.-B. / Materials Research Society et al. | 1998
- 407
-
TiN Diffusion Barrier Formation by Pulsed Source Chemical Vapor Deposition MethodJeon, H. / Lee, S. / Ahn, T. / Uhm, J. / Materials Research Society et al. | 1998
- 409
-
Diffusion Barrier Properties of the TIN Films Prepared by ECR PECVD MethodPark, H.-L. / Jang, S.-S. / Lee, W.-J. / Materials Research Society et al. | 1998
- 411
-
Process Windows of Titanium, Cobalt and Nickel Silicide in Deep Submicron Poly-Si LinesPoon, M. C. / Deng, F. / Ho, C. H. / Chan, M. / Materials Research Society et al. | 1998
- 417
-
Effect of boron on diffusion barrier characteristics of PECVD W-B-N filmsKim, Dong Joon / Kim, Yong Tae / Park, Jong-Wan et al. | 1998
- 417
-
Effects of Boron on Diffusion Barrier Characteristics of PECVD W-B-N FilmsDong Joon Kim / Yong Tae Kim / Park, J.-W. / Materials Research Society et al. | 1998
- 423
-
Characterization of Thin Titanium and Titanium Nitride Layers Using SIMSLi-Fatou, A. V. / Sardela, M. R. / Tian, C. / Materials Research Society et al. | 1998
- 425
-
Asymmetrical Heating Behavior at Ni/Doped-Si Junctions for SOI StructuresLiao, C. N. / Tu, K. N. / Materials Research Society et al. | 1998
- 427
-
Oxide Mediated Epitaxy on Planar and Non-Planar SiTung, R. T. / Howard, D. J. / Ohmi, S. / Caymax, M. / Materials Research Society et al. | 1998
- 433
-
Electrochemical and Material Study of Electroless Ternary Barriers for Copper InterconnectsLopatin, S. / Kim, Y. / Shacham-Diamand, Y. / Materials Research Society et al. | 1998
- 441
-
The Stability of Aging of Pd/Zn and Pt-Based Ohmic Contacts to p-InGaAs/InPLeech, P. W. / Reeves, G. K. / Ressel, P. / Materials Research Society et al. | 1998
- 441
-
Stability to ageing of Pd/Zn and Pt-based ohmic contacts to p-InGaAs/InPLeech, P.W. / Reeves, G.K. / Ressel, P. et al. | 1998
- 449
-
Metal-GaN Contact TechnologyLau, S. S. / Materials Research Society et al. | 1998
- 451
-
Metal Contact on Nitride-Based MaterialsRen, F. / Abernathy, C. R. / Shurman, M. / Hong, M. / Materials Research Society et al. | 1998
- 453
-
Growth and Characterization of Rare-Earth Phosphide/Arsenide Schottky Contacts to GaAsLee, P. P. / Chern, J. H. / Sadwick, L. P. / Hwu, R. J. / Materials Research Society et al. | 1998
- 455
-
In-Situ Regrowth of GaAs Through Controlled Phase Transformations and Reactions of Thin Films on GaAsCaldwell, D. A. / Chen, L.-C. / Bensaoula, A. H. / Farrer, J. K. / Materials Research Society et al. | 1998
- 461
-
Epitaxial Growth of CoGa on (100)GaAs by Metal-Organic Molecular Beam EpitaxyViguier, N. / Maury, F. / Materials Research Society et al. | 1998
- 467
-
High-Resolution Auger Imaging Combined with Focused Ion Beam for the Investigation of Metal/GaAs Contacts in High-Power TransistorsEtienne, P. / Landesman, J.-P. / Wyczisk, F. / Cassette, S. / Materials Research Society et al. | 1998
- 471
-
Carbon Nanotubes: Molecular Electronic Devices and InterconnectsSrivastava, D. / Menon, M. / Materials Research Society et al. | 1998
- 473
-
Organically Deposited Metallic Films for Device FabricationO'Keefe, T. / Stroder, M. / O'Keefe, M. / Materials Research Society et al. | 1998
- 479
-
Conducting Thin Films of Ruthenium Oxide Prepared by MOCVDHones, P. / Kohli, C.-H. / Sanjines, R. / Levy, F. / Materials Research Society et al. | 1998
- 485
-
Self-Aligned Gate Metallization Processes With Low-Thermal BudgetLin, X. W. / Weling, M. / Materials Research Society et al. | 1998
- 491
-
Processing of Pure Ni MOCVD FilmsBrissonneau, L. / Reynes, A. / Vahlas, C. / Materials Research Society et al. | 1998
- 499
-
Low-Temperature CVD Route to Binary and Ternary Diffusion Barrier Nitrides for Cu MetallizationKaloyeros, A. E. / Kelsey, J. / Goldberg, C. / Anjum, D. / Materials Research Society et al. | 1998
- 501
-
The Best Way to Obtain Good Quality CVD-TiN Films From TiCl~4 and NH~3Hamamura, H. / Shimogaki, Y. / Akiyama, Y. / Egashira, Y. / Materials Research Society et al. | 1998
- 505
-
Development of a Titanium Nitride Thin Film StandardSteel, E. / Deslattes, R. / Pedulla, J. / Lamaze, G. / Materials Research Society et al. | 1998
- 507
-
Novel Diffusion Barrier with Ultra-Thin Silicon Nitride Cap LayerLu, J. P. / Hsu, W. Y. / Hong, Q. Z. / Dixit, G. A. / Materials Research Society et al. | 1998
- 513
-
PVD Ti-Si-N Films Process Development for Copper Interconnect ApplicationsZhang, J. / Venkatraman, R. / Wilson, T. / Fiordalice, R. / Materials Research Society et al. | 1998
- 521
-
Ultra-Thin TaN Films as Diffusion Barriers for Cu MetallizationHuang, S. S. / Tu, K. N. / Sun, B. / Materials Research Society et al. | 1998
- 523
-
Effect of NH~3 Plasma Treatment on Etching of Ti During TiCl~4-Based TiN CVD ProcessesGross, M. E. / Coleman, E. / Ohto, K. / Materials Research Society et al. | 1998
- 531
-
Chemical Vapor Deposition of Tantalum Nitride Films Using Pentakis(diethylamido)tantalum and AmmoniaCho, S.-L. / Kim, K.-B. / Min, S.-H. / Shin, H.-K. / Materials Research Society et al. | 1998
- 537
-
Copper Metallization Layers on Bismuth-Telluride Substrates: Effectiveness of Cr, Pt, and Ta~4~0Si~1~4N~4~6 Thin Films As Diffusion BarriersKacsich, T. / Nicolet, M.-A. / Kolawa, E. / Fleurial, J.-P. / Materials Research Society et al. | 1998
- 539
-
Optimizing Sputtered TiN Arc Film Properties for Lithography of Sub-0.25 m InterconnectSengupta, S. S. / Baker, D. / Sethi, S. / Bothra, S. / Materials Research Society et al. | 1998
- 539
-
Optimizing sputtered TiN arc film properties for lithography of sub-0.25 my m interconnectSengupta, S.S. / Baker, D. / Sethi, S. / Bothra, S. et al. | 1998
- 547
-
Interfacial Reactions in Multilayers Intended for Microelectronics DevicesFederspiel, X. / Voiron, F. / Ignat, M. / Marieb, T. / Materials Research Society et al. | 1998