Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices (English)
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- New search for: Garduño‐Nolasco, Edson
- New search for: Carrington, Peter J.
- New search for: Krier, Anthony
- New search for: Missous, Mohamed
- New search for: Garduño‐Nolasco, Edson
- New search for: Carrington, Peter J.
- New search for: Krier, Anthony
- New search for: Missous, Mohamed
In:
IET Optoelectronics
;
8
, 2
;
71-75
;
2014
- Article (Journal) / Electronic Resource
-
Title:Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices
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Contributors:Garduño‐Nolasco, Edson ( author ) / Carrington, Peter J. ( author ) / Krier, Anthony ( author ) / Missous, Mohamed ( author )
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Published in:IET Optoelectronics ; 8, 2 ; 71-75
-
Publisher:
- New search for: The Institution of Engineering and Technology
-
Publication date:2014-04-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:wide band gap semiconductors , molecular beam epitaxial growth , QD array , electrical properties , voltage 0.73 V , optical properties , photovoltaic devices , quantum optics , solar cells , photovoltaic cells , open‐circuit voltage , InAs−GaAs , short‐circuit currents , molecular beam epitaxy , short‐circuit current density , QD layers , sun illumination , voltage 0.70 V , indium compounds , semiconductor quantum dots , n dopant sheet densities , electric properties , indium arsenide‐gallium arsenide quantum dots , structural properties , gallium arsenide , semiconductor epitaxial layers , bandfilling , III‐V semiconductors
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Source:
Table of contents – Volume 8, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 19
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Editorial: Semiconductor lasers and integrated optoelectronicsBlood, Peter et al. | 2014
- 19
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Semiconductor lasers and integrated optoelectronicsBlood, P. et al. | 2014
- 20
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Electrically pumped continuous‐wave 1.3‐µm InAs/GaAs quantum dot lasers monolithically grown on Si substratesWu, Jiang / Lee, Andrew / Jiang, Qi / Tang, Mingchu / Seeds, Alwyn J. / Liu, Huiyun et al. | 2014
- 20
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Electrically pumped continuous-wave 1.3-.spl mu/m InAs/GaAs quantum dot lasers monolithically grown on Si substratesWu, J. / Lee, A. / Jiang, Q. / Tang, M. / Seeds, A. J. / Liu, H. et al. | 2014
- 25
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Low-strain, quantum-cascade-laser active regions grown on metamorphic buffer layers for emission in the 3.0–4.0 μm wavelength regionMawst, Luke J. / Kirch, Jeremy D. / Kim, TaeWan / Garrod, Toby / Boyle, Colin / Botez, Dan / Zutter, Brian / Schulte, Kevin / Kuech, Thomas F. / Bouzi, Pierre M. et al. | 2014
- 33
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Efficient terahertz devices based on III–V semiconductor photoconductorsKostakis, Ioannis / Saeedkia, Daryoosh / Missous, Mohamed et al. | 2014
- 40
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Theoretical study of line narrowing in a sub‐terahertz monolithic dual laser source with an integrated reflectorYang, Zhen / Wonfor, Adrian / Penty, Richard V. / White, Ian H. et al. | 2014
- 44
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Numerical simulation of a mode‐locked quantum dot external cavity laserDogru, Nuran / Adams, Mike J. et al. | 2014
- 51
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Analysis of frequency chirp of self-injected nanostructure semiconductor lasersWang, Cheng / Even, Jacky / Grillot, Frederic et al. | 2014
- 58
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Modelling the dynamics of a micro-cavity switchDias, Hasula K. / Kaunga-Nyirenda, Simeon Newton / Lim, Jun Jun / Phillips, Andrew J. / Larkins, Eric C. et al. | 2014
- 64
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Development and characterisation of laser power converters for optical power transfer applicationsJarvis, Scott D. / Mukherjee, Jayanta / Perren, Matthew / Sweeney, Stephen J. et al. | 2014
- 71
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Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devicesGarduño-Nolasco, Edson / Carrington, Peter J. / Krier, Anthony / Missous, Mohamed et al. | 2014
- 76
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Carrier extraction from GaSb quantum rings in GaAs solar cells using direct laser excitationJames, Juanita Saroj / Fujita, Hiromi / Carrington, Peter J. / Marshall, Andrew R.J. / Krier, Anthony et al. | 2014
- 81
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Modelling of quantum dot intermediate band solar cells: effect of intermediate band linewidth broadeningWang, Qiao-Yi / Rorison, Judy et al. | 2014
- 88
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Effect of non‐pinned carrier density above threshold in InAs quantum dot and quantum dash lasersMarko, Igor P. / Adams, Alf R. / Massé, Nicolas F. / Sweeney, Stephen J. et al. | 2014
- 94
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Bistability of threshold in quantum dash‐in‐a‐well lasersHarnedy, Patrick E. / Osborne, Simon / Joshi, Siddharth / Lelarge, François / O'Reilly, Eoin P. et al. | 2014
- 99
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Factors influencing brightness and beam quality of conventional and distributed Bragg reflector tapered laser diodes in absence of self-heatingKaunga-Nyirenda, Simeon Newton / Bull, Stephen / Lim, Jun Jun / Hasler, Karl-Heinz / Fricke, Jörg / Larkins, Eric C. et al. | 2014
- 108
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Generation of 140 fs pulse train with widely tunable repetition rate through cascaded fibre compression techniquesZhu, Shuxuan / Quarterman, Adrian H. / Wonfor, Adrian / Penty, Richard V. / White, Ian H. et al. | 2014
- 113
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Optical tracking of drug release from porous silicon delivery vectorsTonkin, James A. / Shamsudeen, Sabeel / Brown, Martyn Rowan / Serda, Rita E. / Rees, Paul / Summers, Huw D. et al. | 2014
- 117
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Simulated dynamics of optically pumped dilute nitride 1300 nm spin vertical-cavity surface-emitting lasersAlharthi, Sami S. / Al Seyab, Rihab K. / Henning, Ian D. / Adams, Michael J. et al. | 2014
- 122
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Feasibility of GaAs-based metal strip surface plasmon nano-lasersLafone, Lucas / Sidiropoulos, Themistoklis P.H. / Hamm, Joachim M. / Oulton, Rupert F. et al. | 2014
- 129
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Design optimisation of metallic sub-wavelength nanowire lasersSattar, Zubaida A. / Shore, Keith Alan / Wang, Zengbo et al. | 2014