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Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures
Springer Verlag | 2017| -
Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures
Online Contents | 2017| -
Growth of AlGaN under the conditions of significant gallium evaporation: Phase separation and enhanced lateral growth
American Institute of Physics | 2017| -
Erratum to: “Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well”
Free accessSpringer Verlag | 2015| -
3-bit writing of information in nanoporous glass by a single sub-microsecond burst of femtosecond pulses
British Library Online Contents | 2018| -
Nanostructure Evolution of Oxide Dispersion Strengthened Steels under Fe Ion Irradiation at 350°C
Springer Verlag | 2020|
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