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Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas
Online Contents | 2017| -
Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing
Online Contents | 2017| -
AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900–1200°C temperature range
Online Contents | 2017| -
Effect of convective flow on stable dendritic growth in rapid solidification of a binary alloy
Online Contents | 2017| -
Control of GaP nanowire morphology by group V flux in gas source molecular beam epitaxy
Online Contents | 2017|
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