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Influence of annealing atmosphere on crystallization of amorphous Si1-xGex thin film by Raman spectroscopy
British Library Online Contents | 2018| -
Stabilization of amorphous structure in silicon thin film by adding germanium
American Institute of Physics | 2015| -
Influence of Local Surface Potential on Kikuchi Envelope of High-Energy Electrons within a Reconstructed Surface Layer (6 pages)
British Library Online Contents | 2017| -
Stabilization of amorphous structure in silicon thin film by adding germanium (6 pages)
British Library Online Contents | 2015| -
Development of probe-to-probe approach method for an independently controlled dual-probe scanning tunneling microscope
National licenceAmerican Institute of Physics | 2007| -
Surface morphology and structure of Ge layer on Si(111) after solid phase epitaxy
British Library Online Contents | 2018| -
Strain induced modification of quasi-two-dimensional electron gas state on &sqrt;3×&sqrt;3-Ag structure
National licenceAmerican Institute of Physics | 2010| -
Modification of electronic states of &sqrt;3×&sqrt;3-Ag structure by strained Ge/Si(111) substrate
National licenceAmerican Institute of Physics | 2009| -
Formation of some hierarchy in amorphous structure during the crystallization of vacuum‐deposited amorphous semiconductor films
National licenceAmerican Institute of Physics | 1988| -
Direct observation of Si(111) &sqrt;7×&sqrt;7-Co structure and its local electronic structure
National licenceAmerican Institute of Physics | 2010| -
Annealing effect on an amorphous Si film deposited on a 7×7 superlattice surface of Si(111) studied with low‐energy electron diffraction
National licenceAmerican Institute of Physics | 1994| -
Thickness effect of amorphous Si film on formation of 7×7 superlattice surface during its solid phase epitaxial growth
National licenceAmerican Institute of Physics | 1989| -
Formation of uniform nanoscale Si islands on a Si(111)-7×7 substrate
National licenceAmerican Institute of Physics | 1999|
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