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Characteristics of 1.3 μm InAs/InGaAs/GaAs quantum dot electroabsorption modulator (3 pages)
British Library Online Contents | 2009| -
Design Considerations for 1.3 μm GaNAsSb-GaAs High Speed and High Quantum Efficiency Waveguide Photodetectors
British Library Online Contents | 2009| -
Low energy Ar+ sputtering-induced GaAs quantum dot formation and evolution
Online Contents | 2009|Contributors: Ngo, C.Y. -
Temperature and excitation density dependent photoluminescence of sputtering-induced GaAs-AlGaAs quantum dots
Online Contents | 2008|Contributors: Ngo, C.Y. -
Quantum-Dot Lasers - Rate Equations for 1.3-mm Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs-GaAs Quantum-Dot Lasers
Online Contents | 2006|Contributors: Ngo, C.Y. -
Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−x Ge x /Si substrate
Online Contents | 2011|Contributors: Ngo, C.Y. -
Two-state competition in 1.3 µm multilayer InAs-InGaAs quantum dot lasers
Online Contents | 2009|Contributors: Ngo, C.Y. -
Structural and optical properties of stacked self-assembled InAs-InGaAs quantum dots on graded Si1-xGex-Si substrate
Online Contents | 2008|Contributors: Ngo, C.Y. -
Origin and suppression of V-shaped defects in the capping of self-assembled InAs quantum dots on graded Si1-xGex-Si substrate
Online Contents | 2009|Contributors: Ngo, C.Y. -
Design Considerations for 1.3 µm GaNAsSb-GaAs High Speed and High Quantum Efficiency Waveguide Photodetectors
Online Contents | 2009|Contributors: Ngo, C.Y.
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