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Characterization and modeling of electrical stress degradation in STI-based integrated power devices
Online Contents | 2014| -
MOS Capacitors, MOS Transistors, and Charge-Transfer Devices
Springer Verlag | 2022|Contributors: Reggiani, Susanna -
Electron effective masses of ScxAl1−xN and AlxGa1−xN from first-principles calculations of unfolded band structure
Free accessAmerican Institute of Physics | 2022| -
Two-Particle Wave Function of Electrons Coherently Propagating along Quantum Wires
Online Contents | 2003| -
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE
Free accessIEEE | 2023| -
Application of the k ⋅ p Method to Device Simulation
Springer Verlag | 2022|Contributors: Reggiani, Susanna
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