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Influence of noise parameters of integral operational amplifiers and voltage comparators and their nonlinear distortions on presentation accuracy of signals being processed
Springer Verlag | 2009|Keywords: 85.40.-e -
Hydrogen blistering of silicon: Progress in fundamental understanding
Wiley | 2007|Keywords: 85.40.−e -
Numerical modeling of temperature fields in the elements and units of electronic systems
Springer Verlag | 2009|Keywords: 85.40.-e -
Dual-collector bipolar magnetotransistor: Defining and determining its magnetic-field sensitivity
Springer Verlag | 2009|Keywords: 85.40.-e -
Operability analysis of submicron CMOS-based VLSI RAMs operated under extreme thermal conditions
Springer Verlag | 2009|Keywords: 85.40.-e -
Experimental studies of the adequacy of laser simulations of dose rate effects in integrated circuits and semiconductor devices
Springer Verlag | 2009|Keywords: 85.40.-e -
Evaluating the effect of temperature on the accuracy of laser simulation of the transient radiation response in semiconductor devices and circuits
Springer Verlag | 2008|Keywords: 85.40.-e -
Specific features of radiation-stimulated breakdown of a nonuniformly doped p-n junction
Springer Verlag | 2009|Keywords: 85.40.-e -
Simulating the response of SOS CMOS building blocks to pulsed ionizing irradiation
Springer Verlag | 2008|Keywords: 85.40.-e -
Prospects for using submicron CMOS VLSI in fault-tolerant equipment operating under exposure to atmospheric neutrons
Springer Verlag | 2009|Keywords: 85.40.-e -
Calculation of surface recombination current in bipolar microelectronic structures subjected to ionizing radiation
Springer Verlag | 2009|Keywords: 85.40.-e -
Functional-logical simulation of quality of functioning integrated circuits under the effect of radiation and electromagnetic field
Springer Verlag | 2009|Keywords: 85.40.-e -
Evaluating the effect of photogeneration nonuniformity on the accuracy of laser simulation of the transient radiation response in semiconductor devices and circuits
Springer Verlag | 2008|Keywords: 85.40.-e -
Silicon readout ICs for third-generation 2D IR focal-plane arrays operating over the wavelength range 8–12 μm
Springer Verlag | 2008|Keywords: 85.40.-e -
New CMOS process using a thermal-oxide mask for making n −- and p −-Wells
Springer Verlag | 2008|Keywords: 85.40.-e -
Sign of bipolar-magnetotransistor sensitivity as dependent on device structure
Springer Verlag | 2008|Keywords: 85.40.-e -
New experiments on iterative synthesis of combinational circuits
Springer Verlag | 2008|Keywords: 85.40.-e -
Simulating single-event effects associated with high-energy neutrons for different VLSI technologies
Springer Verlag | 2008|Keywords: 85.40.-e
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