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Study of MOS-gated strained-Si Buried Channel Field Effect Transistors
Taylor & Francis Verlag | 2007| -
Thermopower-enhanced efficiency of Si/SiGe ballistic rectifiers (3 pages)
British Library Online Contents | 2009| -
Identification and separation of rectifier mechanisms in Si/SiGe ballistic cross junctions
American Institute of Physics | 2017| -
Phonon-induced breakdown of negative bend resistance in an asymmetric Si/SiGe cross junction
National licenceAmerican Institute of Physics | 2005| -
Study of MOS-gated strained-Si Buried Channel Field Effect Transistors
British Library Online Contents | 2007| -
Ballistic Rectification in Four-terminal Fork-shaped Si/SiGe Junctions
British Library Conference Proceedings | 2007| -
Quantization and anomalous structures in the conductance of Si/SiGe quantum point contacts
American Institute of Physics | 2016| -
Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation
National licenceIOP Institute of Physics | 2008| -
1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors
British Library Online Contents | 2009| -
Quantized conductance and bend resistance in an asymmetric Si/SiGe cross junction
British Library Online Contents | 2006| -
Quantized conductance and bend resistance in an asymmetric Si/SiGe cross junction
British Library Conference Proceedings | 2006| -
Strained-Si modulation doped field effect transistors as detectors of terahertz and sub-terahertz radiation
British Library Online Contents | 2008|
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