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Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing
American Institute of Physics | 2018| -
First-order reversal curve diagrams for characterizing ferroelectricity of Hf0.5Zr0.5O2 films grown at different rates
American Institute of Physics | 2018| -
Nonvolatile memory device and cross point array device including the same
Free accessEuropean Patent Office | 2023| -
OXIDE ELECTRODE FOR DEVICE WITH POLARIZABLE MATERIAL LAYER
Free accessEuropean Patent Office | 2022| -
3 3D NON-VOLATILE MEMORY OPERATING METHOD OF THE SAME AND MANUFACTURING METHOD OF THE SAME
Free accessEuropean Patent Office | 2023| -
OXIDE ELECTRODE FOR DEVICE WITH POLARIZABLE MATERIAL LAYER
Free accessEuropean Patent Office | 2022| -
Nonvolatile memory device and cross point array device including the same
Free accessEuropean Patent Office | 2022| -
NONVOLATILE MEMORY DEVICE AND CROSS POINT ARRAY DEVICE INCLUDING THE SAME
Free accessEuropean Patent Office | 2022| -
3D NON-VOLATILE MEMORY, OPERATING METHOD OF THE SAME AND MANUFACTURING METHOD OF THE SAME
Free accessEuropean Patent Office | 2023| -
Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization
American Institute of Physics | 2020| -
Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode
Royal Society of Chemistry | 2020| -
Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing
American Chemical Society | 2022| -
Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays
American Chemical Society | 2021|
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