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Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission
National licenceAmerican Institute of Physics | 2006| -
Control over the Number Density and Diameter of GaAs Nanowires on Si(111) Mediated by Droplet Epitaxy
American Chemical Society | 2013| -
Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates
American Institute of Physics | 2004| -
Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells
National licenceAmerican Institute of Physics | 2008| -
Lateral piezoelectric fields in strained semiconductor heterostructures
National licenceAmerican Physical Society | 1994| -
Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires
American Institute of Physics | 2014| -
Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance
National licenceAmerican Institute of Physics | 2009| -
Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy
National licenceAmerican Institute of Physics | 1997| -
Toward edges-rich MoS2 layers via chemical liquid exfoliation triggering distinctive magnetism
Free accessTaylor & Francis Verlag | 2017| -
Nucleation and growth of GaN layers on GaAs, Si, and SiC substrates
American Institute of Physics | 1998| -
Erratum: “Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil” [Appl. Phys. Lett. 108, 202101 (2016)]
Free accessAmerican Institute of Physics | 2017| -
Molecular beam epitaxy of InAs quantum wells on InP(001) for high mobility two-dimensional electron gases
Royal Society of Chemistry | 2023| -
Coaxial Multishell (In,Ga)As/GaAs Nanowires for Near-Infrared Emission on Si Substrates
Tema Archive | 2014|
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