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Vertical gallium nitride power field-effect transistor with a field plate structure
Free accessEuropean Patent Office | 2019| -
VERTICAL GALLIUM NITRIDE POWER FIELD-EFFECT TRANSISTOR WITH A FIELD PLATE STRUCTURE
Free accessEuropean Patent Office | 2016| -
Measurement of Channel Temperature in GaN High-Electron Mobility Transistors
Free accessDSpace@MIT | 2009| -
Corrections to “Analysis of First-Order Gratings in Silicon Photonic Waveguides”
Free accessIEEE | 2023| -
Gate-recessed integrated E/D GaN HEMT technology with fT/f max>300 GHz
Online Contents | 2013|Contributors: Chou, Tso-Min
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