Year of publication
Type of material
Licence
Synonyms were used for: epitaxiale Schicht
Search without synonyms: keywords:("epitaxiale Schicht")
Used synonyms:
- epilayers
- epitaxial films
- epitaxial layers
- epitaxialer film
- epitaxialfilm
- epitaxialschicht
-
∼1.40 eV emission band in GaAs
IET Digital Library Archive | 1982|Keywords: semiconductor epitaxial layers -
0.1 µm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
IET | 1999|Keywords: semiconductor epitaxial layers -
0.1 µm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
IET Digital Library Archive | 1999|Keywords: semiconductor epitaxial layers -
0.6 mu m, single poly advanced BiCMOS (ABiC IV) technology for ASIC applications
Tema Archive | 1990|Keywords: EPITAXIALSCHICHT -
0.15 micron power pHEMT manufacturing technology for Ka- and Q-band MMIC power amplifiers
Tema Archive | 2005|Keywords: Epitaxialschicht -
0.23 μm gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE
IET Digital Library Archive | 1991|Keywords: semiconductor epitaxial layers -
0.85 micron 8x8 bottom-surface-emitting laser diode arrays grown on AlGaAs substrates by MOCVD
Tema Archive | 1995|Keywords: Epitaxialschicht -
0.98 micron multiquantum well tunnelling injection lasers with ultra-high modulation bandwidths
Tema Archive | 1996|Keywords: Epitaxialschicht -
1.0-1.6 mum planar avalanche photodiode by LPE grown InP/InGaAs/InP DH structure
Tema Archive | 1982|Keywords: EPITAXIALSCHICHT -
1.0–1.6 μm planar avalanche photodiode by LPE grown InP/InGaAs/InP DH structure
IET Digital Library Archive | 1982|Keywords: semiconductor epitaxial layers -
1.2-1.6 micrometer Ga(x)In(1-x)As(y)P(1-y)-InP DH lasers grown by LPMOCVD
Tema Archive | 1984|Keywords: EPITAXIALSCHICHT -
1.3–1.55 μm wavelength integrated photoreceiver using GaInAs/GaAs heteroepitaxy
IET Digital Library Archive | 1989|Keywords: semiconductor epitaxial layers -
1.3- mu m emission of Nd:LaF3 thin films grown by molecular beam epitaxy
Tema Archive | 2000|Keywords: Epitaxialschicht -
1.3 mu m InGaAsP/InP crescent buried heterostructure laser diodes grown by liquid phase epitaxy
Tema Archive | 1988|Keywords: EPITAXIALSCHICHT -
1.3 W CW, diffraction-limited monolithically integrated master oscillator flared amplifier at 863 nm
Tema Archive | 1993|Keywords: Epitaxialschicht -
1.3 µm beam-expander integrated laser grown by single-step MOVPE
IET | 1995|Keywords: semiconductor epitaxial layers -
1.3 µm beam-expander integrated laser grown by single-step MOVPE
IET Digital Library Archive | 1995|Keywords: semiconductor epitaxial layers -
1.3 µm GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy
IET | 2004|Keywords: semiconductor epitaxial layers
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