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Surface kinetic considerations for molecular‐beam epitaxy growth of high‐quality inverted heterointerfaces
American Institute of Physics | 1988| -
Formation of device quality Si/SiO2 interfaces at low substrate temperatures by remote plasma enhanced chemical vapor deposition of SiO2
American Institute of Physics | 1990| -
Study of isoelectronic In doping in molecular beam epitaxy grown GaAs thyristors
American Institute of Physics | 1990| -
Effect of Mg(OH)2 on YBa2Cu3O7 thin film on MgO substrate studied by atomic force microscope
American Institute of Physics | 1994| -
Low‐temperature growth and characterization of GaAs epitaxial layer on (111)B GaAs substrates
American Institute of Physics | 1994| -
Evaluation of Zr/O/W Schottky emitters for microcolumn applications
American Institute of Physics | 1994| -
Sub‐40 nm resolution 1 keV scanning tunneling microscope field‐emission microcolumn
American Institute of Physics | 1994| -
Real‐time process and product diagnostics in rapid thermal chemical vapor deposition using in situ mass spectrometric sampling
American Institute of Physics | 1995| -
Subatmospheric chemical vapor deposition ozone/TEOS process for SiO2 trench filling
American Institute of Physics | 1995| -
An electron‐beam microcolumn with improved resolution, beam current, and stability
American Institute of Physics | 1995| -
Oxide growth on silicon (100) in the plasma phase of dry oxygen using an electron cyclotron resonance source
American Institute of Physics | 1996| -
Electron‐beam microcolumns for lithography and related applications
American Institute of Physics | 1996| -
Performance of Zr/O/W Schottky emitters at reduced temperatures
American Institute of Physics | 1997| -
Optimization of the temperature distribution across stencil mask membranes under ion beam exposure
American Institute of Physics | 1998| -
Detection and control of ferroelectric domains by an electrostatic force microscope
American Institute of Physics | 1998| -
Epitaxial staircase structure for the calibration of electrical characterization techniques
American Institute of Physics | 1998| -
Effect of a deep-level trap on hole transport in metal–semiconductor–metal photodetectors
American Institute of Physics | 1998|
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