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Low Frequency Noise in Insulated-Gate Strained-Si n-Channel Modulation Doped Field Effect Transistors
British Library Online Contents | 2007| -
Impact of proximity correction on device yield in electron-beam definition of MSM detectors
British Library Online Contents | 1996| -
Impact of proximity correction on device yield in electron-beam definition of MSM detectors
British Library Conference Proceedings | 1996| -
Phonon-induced breakdown of negative bend resistance in an asymmetric Si/SiGe cross junction (3 pages)
British Library Online Contents | 2005| -
AlGaAs Schottky reflection modulator and detector for Gbit/s optical transmission systems
IET Digital Library Archive | 1989| -
Strain relieved SiGe buffers for Si-based heterostructure field-effect transistors
Tema Archive | 1999| -
DC Performance of Deep Submicrometer Schottky-Gated n-Channel Si:SiGe HFETs at Low Temperatures
British Library Online Contents | 2005| -
Artificial substrates for n- and p-type SiGe heterostructure field-effect transistors
British Library Conference Proceedings | 1998| -
Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation
Free accessArXiv | 2003| -
A closed UHV focused ion beam patterning and MBE regrowth technique
British Library Conference Proceedings | 1995|
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