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Study on nitrogen-induced defects formation and annealing effects in TlInGaAsN alloysystem
Elsevier | 2013|Keywords: B2. Semiconducting III–V materials -
Electrical properties of GaN-based heterostructures adopting InAlN/AlGaN bilayer barriers
Elsevier | 2016|Keywords: B2. Semiconducting III-V materials -
Controlling the compositional inhomogeneities in AlxGa1−xN/AlyGa1−yN MQWs grown by PA-MBE: Effect on luminescence properties
Elsevier | 2016|Keywords: B2. Semiconducting III–V materials -
Characterization of deep levels in a-plane GaN epi-layers grown using various growth techniques
Elsevier | 2011|Keywords: B2. Semiconducting III–V materials -
Highly tin doped GaAs at low growth temperatures using tetraethyl tin by metal organic vapor phase epitaxy
Elsevier | 2018|Keywords: B2. Semiconducting III-V materials -
Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides
Elsevier | 2017|Keywords: B2. Semiconducting III–V materials -
Origin of microstructural defects in single-crystalline films van der Waals epitaxy on graphene
Elsevier | 2020|Keywords: B2. Semiconducting III-V materials -
Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates
Elsevier | 2013|Keywords: B2. Semiconducting III–V materials -
Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor
Elsevier | 2016|Keywords: B2. Semiconducting III–V materials -
Nanoharvesting of GaN nanowires on Si (211) substrates by plasma-assisted molecular beam epitaxy
Elsevier | 2014|Keywords: B2. Semiconducting III–V materials -
Comparative study of etching high crystalline quality AlN and GaN
Elsevier | 2012|Keywords: B2. Semiconducting III–V materials -
Influence of Sb surfactant on carrier concentration in heavily Zn-doped InGaAs grown by metalorganic vapor phase epitaxy
Elsevier | 2010|Keywords: B2. Semiconducting III–V materials -
Effect of growth temperature on the impurity incorporation and material properties of N-polar GaN films grown by metal-organic chemical vapor deposition
Elsevier | 2013|Keywords: B2. Semiconducting III–V materials -
MBE synthesis of (In,Mn)As quantum dots using Mn selective doping
Elsevier | 2016|Keywords: B2. Semiconducting III-V materials -
Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05μm using In-flush technique for broadband near-infrared light source
Elsevier | 2013|Keywords: B2. Semiconducting III–V materials -
Effects of growth temperature on surface morphology of InP grown on patterned Si(001) substrates
Elsevier | 2015|Keywords: B2. Semiconducting III–V materials -
MBE growth of VCSELs for high volume applications
Elsevier | 2010|Keywords: B2. Semiconducting III–V materials -
Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing
Elsevier | 2019|Keywords: B2. Semiconducting III-V materials -
Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3μm by using quantum dot bi-layer for broadband light source
Elsevier | 2013|Keywords: B2. Semiconducting III–V materials -
Threading dislocation density characterization in III–V photovoltaic materials by electron channeling contrast imaging
Elsevier | 2016|Keywords: B2. Semiconducting III–V materials
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