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61–80 of 5,931 hits
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Dose rate dependence of the ion-beam-induced epitaxial crystallization in silicon
National licenceElsevier | 1993| -
Proximity getterihg by MeV-implantation of carbon: microstructure and carrier lifetime measurements
National licenceElsevier | 1991| -
Evidence for diffusion-limited kinetics of ion-beam-induced epitaxial crystallization in silicon
National licenceAmerican Physical Society | 1995| -
Rapid thermal annealing of high dose arsenic-implanted silicon
National licenceSpringer Verlag | 1990| -
Range measurements of phosphorus in silicon after high energy implantation between 8 and 30 MeV
National licenceTaylor & Francis Verlag | 1991| -
Prevention of impurity gettering in the RP/2 region of ion-implanted silicon by defect engineering
British Library Online Contents | 2002| -
SIMS Investigations of Gettering Centers in Ion-Implanted and Annealed Silicon
British Library Online Contents | 2002| -
The electroweak fit of the standard model after the discovery of a new boson at the LHC
Free accessSpringer Verlag | 2012| -
Study of defect engineering in the initial stage of SIMOX processing
British Library Conference Proceedings | 2007| -
Acceptor Deactivation in Silicon Nanowires Analyzed by Scanning Spreading Resistance Microscopy
British Library Conference Proceedings | 2011| -
Prevention of impurity gettering in the R~p/2 region of ion-implanted silicon by defect engineering
British Library Conference Proceedings | 2002|
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