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Donor-acceptor pair luminescence in B and P compensated Si co-doped with Ga
Online Contents | 2013| -
Deep-level photoluminescence due to dislocations and oxygen precipitates in multicrystalline Si
Online Contents | 2012| -
071301 Fine Structure Due to Donor-Acceptor Pair Luminescence in Compensated Si
Online Contents | 2010| -
Determination of boron and phosphorus concentration in silicon by photoluminescence analysis
National licenceAmerican Institute of Physics | 1978| -
Quantification of carbon in Si crystals by photoluminescence at liquid-nitrogen and room temperatures
British Library Online Contents | 2018| -
CARBON CONCENTRATION MEASUREMENT METHOD AND CARBON CONCENTRATION MEASUREMENT DEVICE
Free accessEuropean Patent Office | 2018| -
Characterization of semi‐insulating GaAs wafers by room‐temperature EL2‐related photoluminescence
National licenceAmerican Institute of Physics | 1988| -
Deep level photoluminescence commonly present in undoped Czochralski grown GaAs
National licenceAmerican Institute of Physics | 1985| -
Characterization of silicon-on-insulator wafers by photoluminescence under UV light excitation
Online Contents | 2002| -
Characterization of neutron‐transmutation doping in silicon by the photoluminescence technique
National licenceAmerican Institute of Physics | 1979| -
Characterization of silicon-on-insulator wafers by photoluminescence under UV light excitation
Online Contents | 2002| -
Photoluminescence due to early stage of oxygen precipitation in multicrystalline Si for solar cells
British Library Online Contents | 2017| -
Luminescence due to electron-hole condensation in silicon-on-insulator
National licenceAmerican Institute of Physics | 1998|
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