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Heating rates in collisionally opaque alkali-metal atom traps: Role of secondary collisions
National licenceAmerican Physical Society | 2000| -
Erratum: Rigorous calculation of heating in alkali-metal traps by background gas collisions [Phys. Rev. A 61, 033606 (2000)]
National licenceAmerican Physical Society | 2001| -
Rigorous calculation of heating in alkali-metal traps by background gas collisions
National licenceAmerican Physical Society | 2000| -
Heating rates in collisionally opaque alkali-metal atom traps: Role of secondary collisions (15 pages)
British Library Online Contents | 2000| -
Dynamics of inelastic collisions of electronically excited rare gas atoms
American Institute of Physics | 1990| -
Velocity distribution and angular distribution of molecular beams from multichannel arrays
National licenceAmerican Institute of Physics | 1975| -
Erratum: “Surface roughness in XeF etching of a-Si∕c-Si(100) [J. Vac. Sci. Technol. A 23, 126 (2005)]”a)
American Institute of Physics | 2006| -
Accurate (0.25 mrad) perpendicular alignment of a continuous‐wave single‐mode dye laser beam and an atomic beam
National licenceAmerican Institute of Physics | 1985| -
TOF analysis of an optically pumped metastable neon beam
National licenceAmerican Institute of Physics | 1981| -
Coupled-channel analysis of Ne^* thermalization cross section (6 pages)
British Library Online Contents | 2006| -
Coupled-channel analysis of Ne^* thermalization cross section (6 pages)
British Library Online Contents | 2006| -
Reaction layer dynamics in ion-assisted Si/XeF2 etching: Temperature dependence
American Institute of Physics | 2000| -
Ion‐assisted Si/XeF2‐etching: Influence of ion/neutral flux ratio and ion energy
American Institute of Physics | 1996| -
Ion‐assisted Si/XeF2 etching: Temperature dependence in the range 100–1000 K
American Institute of Physics | 1996| -
Reaction layer dynamics in ion-assisted etching: Ion flux dependence
American Institute of Physics | 1999|
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