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The relaxation behaviour of supersaturated iron in single-crystal silicon at 500 to 750 °C
National licenceAmerican Institute of Physics | 2012| -
Growth of a Richtmyer-Meshkov turbulent layer after reshock
National licenceAmerican Institute of Physics | 2011| -
Diagnostic performance of the beam emission spectroscopy system on the National Spherical Torus Experiment
National licenceAmerican Institute of Physics | 2012| -
Richtmyer–Meshkov turbulent mixing arising from an inclined material interface with realistic surface perturbations and reshocked flow
National licenceAmerican Institute of Physics | 2011| -
Role of substrate crystallographic characteristics on structure and properties of rutile TiO2 epilayers
National licenceAmerican Institute of Physics | 2013| -
Three-dimensional mapping of stresses in plastically deformed diamond using micro-Raman and photoluminescence spectroscopy
National licenceAmerican Institute of Physics | 2011| -
Modeling far-field radio-frequency sheaths in Alcator C-Mod
National licencePaperIOP Institute of Physics | 2013| -
Enhanced magnetocaloric effect in Gd3Ga5−xFexO12
National licenceAmerican Institute of Physics | 1993| -
Shear-flow excitation mechanisms of recessed localized arc-filament plasma actuators
National licenceAmerican Institute of Physics | 2010| -
Nitrogen diffusion and interaction with dislocations in single-crystal silicon
National licenceAmerican Institute of Physics | 2009| -
Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons
National licencePaperIOP Institute of Physics | 2012| -
Intrinsic damping and intentional ferromagnetic resonance broadening in thin Permalloy films
National licenceAmerican Institute of Physics | 2003| -
Loss of phosphorus due to segregation at Si/SiO2 interfaces: Experiments and modeling
National licenceAmerican Institute of Physics | 2008| -
Synthesis and catalytic properties of highly branched palladium nanostructures using seeded growth
National licenceRoyal Society of Chemistry | 2016| -
Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon
National licenceAmerican Institute of Physics | 2012| -
Heavy ion beam probe advances from the first installation of the diagnostic on an RFP (invited)
National licenceAmerican Institute of Physics | 2012| -
Structural characterization of two-step growth of epitaxial ZnO films on sapphire substrates at low temperatures
National licenceIOP Institute of Physics | 2009| -
A Method for the Numerical Calculation of Hydrodynamic Shocks
National licenceAmerican Institute of Physics | 1950|
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