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—the influence on r‐process nucleosynthesis of light elements
American Institute of Physics | 2009| -
A convenient way of determining the ferromagnetic transition temperature of metallic (Ga,Mn)As
National licenceAmerican Institute of Physics | 2005| -
A high intensity microwave ion source for high current RFQ
National licenceAmerican Institute of Physics | 2004| -
All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits
American Institute of Physics | 2014| -
All-optical edge-enhanced proton imaging driven by an intense vortex laser
American Institute of Physics | 2023| -
An inverted organic solar cell employing a sol-gel derived ZnO electron selective layer and thermal evaporated MoO3 hole selective layer
National licenceAmerican Institute of Physics | 2008| -
An oleic acid-capped CdSe quantum-dot sensitized solar cell
National licenceAmerican Institute of Physics | 2009| -
A sharp interface immersed edge-based smoothed finite element method with extended fictitious domain scheme
American Institute of Physics | 2023| -
Changes in the interface capacitance for fatigued lead–zirconate–titanate capacitors
National licenceAmerican Institute of Physics | 2001| -
Cone kinetics model for two-phase film silicon deposition
National licenceAmerican Institute of Physics | 2008| -
Control of asymmetric strain relaxation in InGaAs grown by molecular-beam epitaxy
National licenceAmerican Institute of Physics | 2010| -
Defect interactions in Sn1−xGex random alloys
National licenceAmerican Institute of Physics | 2009| -
Development of a compact in situ polarized 3He neutron spin filter at Oak Ridge National Laboratory
American Institute of Physics | 2014| -
Digital thermal metasurface with arbitrary infrared thermogram
American Institute of Physics | 2018| -
Distribution of built-in electrical potential in GaInP2/GaAs tandem-junction solar cells
National licenceAmerican Institute of Physics | 2003| -
Does the local built-in potential on grain boundaries of Cu(In,Ga)Se2 thin films benefit photovoltaic performance of the device?
National licenceAmerican Institute of Physics | 2004| -
E centers in ternary Si1−x−yGexSny random alloys
National licenceAmerican Institute of Physics | 2009|
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