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Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si
National licenceIOP Institute of Physics | 2009| -
Electron transport in thin SOI, strained-SOI and GeOI MOSFET by Monte-Carlo simulation
British Library Online Contents | 2005| -
Germanium and Silicon: A Comparative Study of Hydrogenated Interstitial and Vacancy Defects by IR Spectroscopy
British Library Online Contents | 2010| -
Epitaxial Growth of Ge Thick Layers on Nominal and 6oC off Si(001); Ge Surface Passivation by Si
British Library Conference Proceedings | 2008| -
Optical Characterization of Implanted Thin SOI Films
British Library Conference Proceedings | 2005| -
Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs
British Library Conference Proceedings | 2006| -
Modeling of non-equilibrium transport effects in Fully-Depleted GeOI-MOSFETs
British Library Online Contents | 2006| -
P7.5 Scaling of GeOI NFET in sub-50nm regime using a Monte-Carlo method
British Library Conference Proceedings | 2005| -
Optical Characterization of Implanted Thin SOI Films
British Library Conference Proceedings | 2005| -
Epitaxial growth of Ge thick layers on nominal and 6^o off Si(0 0 1); Ge surface passivation by Si
British Library Online Contents | 2009| -
Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator
National licenceAmerican Institute of Physics | 2009| -
Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique
National licenceAmerican Institute of Physics | 2007|
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