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Selecting the best surface analysis method for your materials/samples
Free accessAmerican Institute of Physics | 2024| -
Crystallization kinetics during layer exchange of 28Si implanted Al films for fabrication of quantum computers: A theoretical model
Free accessAmerican Institute of Physics | 2024| -
Piezoelectric and elastic properties of Al0.60Sc0.40N thin films deposited on patterned metal electrodes
Free accessAmerican Institute of Physics | 2024| -
XPS guide for insulators: Electron flood gun operation and optimization, surface charging, controlled charging, differential charging, useful FWHMs, problems and solutions, and advice
Free accessAmerican Institute of Physics | 2024| -
Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile (sub)oxide: The examples of Ga and Ge
Free accessAmerican Institute of Physics | 2024| -
Bismuth surfactant enhancement of surface morphology and film quality of MBE-grown GaSb(100) thin films over a wide range of growth temperatures
Free accessAmerican Institute of Physics | 2024| -
Comparison of three titanium-precursors for atomic-layer-deposited TiO2 for passivating contacts on silicon
Free accessAmerican Institute of Physics | 2024| -
Impact of Nb and Al content in arc evaporation targets on Ti1−x−yAlxNbyN coating properties
Free accessAmerican Institute of Physics | 2024| -
Erratum: “Acquisition and analysis of scanning tunneling spectroscopy data—WSe2 monolayer” [J. Vac. Sci. Technol. A 39, 011001 (2021)]
Free accessAmerican Institute of Physics | 2024| -
Advances in growth, doping, and devices and applications of zinc oxide
Free accessAmerican Institute of Physics | 2024| -
Novel high-efficiency plasma nitriding process utilizing a high power impulse magnetron sputtering discharge
Free accessAmerican Institute of Physics | 2024| -
Operando study of HfO2 atomic layer deposition on partially hydroxylated Si(111)
Free accessAmerican Institute of Physics | 2024| -
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
Free accessAmerican Institute of Physics | 2024| -
Plasma electron characterization in electron chemical vapor deposition
Free accessAmerican Institute of Physics | 2024| -
Direct imaging of the magnetoelectric coupling in multiferroic BaTiO3/La0.9Ba0.1MnO3
Free accessAmerican Institute of Physics | 2024| -
Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching
Free accessAmerican Institute of Physics | 2024| -
Novel principal component analysis tool based on python for analysis of complex spectra of time-of-flight secondary ion mass spectrometry
Free accessAmerican Institute of Physics | 2024| -
Growth of p-doped 2D- on from spatial atomic layer deposition
Free accessAmerican Institute of Physics | 2024| -
Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces
Free accessAmerican Institute of Physics | 2024| -
Microscopic origins of radiative performance losses in thin-film solar cells at the example of (Ag,Cu)(In,Ga)Se2 devices
Free accessAmerican Institute of Physics | 2024|
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