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121–140 of 16,480 hits
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Physics and application of persistent spin helix state in semiconductor heterostructures
Topical ReviewIOP Institute of Physics | 2017| -
Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures
PaperIOP Institute of Physics | 2017| -
Recent progress in red light-emitting diodes by III-nitride materials
Free accessIOP Institute of Physics | 2022| -
III–V quantum-dot lasers monolithically grown on silicon
Topical ReviewIOP Institute of Physics | 2018| -
GaAs-based micro/nanomechanical resonators
Free accessTopical ReviewIOP Institute of Physics | 2017| -
An efficient wide range photodetector fabricated using a bilayer Bi2S3/SnS heterojunction thin film
PaperIOP Institute of Physics | 2019| -
Engineering the photoelectrochemical behaviors of ZnO for efficient solar water splitting
PaperIOP Institute of Physics | 2020| -
SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques
PaperIOP Institute of Physics | 2016| -
High-speed photodetectors in optical communication system Project supported by the Preeminence Youth Fund of China (No. 61625504).
PaperIOP Institute of Physics | 2017| -
Zinc oxide piezoelectric nano-generators for low frequency applications
PaperIOP Institute of Physics | 2017| -
Carrier transport mechanisms in semiconductor nanostructures and devices
PaperIOP Institute of Physics | 2018| -
Mechanism of enhanced photocatalytic activity of Cr-doped ZnO nanoparticles revealed by photoluminescence emission and electron spin resonance
PaperIOP Institute of Physics | 2019| -
Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates
ArticlesIOP Institute of Physics | 2019| -
The role of printing techniques for large-area dye sensitized solar cells
PaperIOP Institute of Physics | 2015| -
DFT investigations on mechanical stability, electronic structure and magnetism in Co2TaZ (Z = Al, Ga, In) heusler alloys
PaperIOP Institute of Physics | 2017| -
Review of radiation effects on ReRAM devices and technology
Topical ReviewIOP Institute of Physics | 2017| -
Light-emitting silicon nanowires obtained by metal-assisted chemical etching
Topical ReviewIOP Institute of Physics | 2017| -
Analysis of temperature dependent forward characteristics of Ni/ β-Ga2O3 Schottky diodes
PaperIOP Institute of Physics | 2016| -
Two-step write–verify scheme and impact of the read noise in multilevel RRAM-based inference engine
PaperIOP Institute of Physics | 2020| -
III-nitride semiconductors for intersubband optoelectronics: a review
National licenceIOP Institute of Physics | 2013|
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