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Development of Cadmium Magnesium Telluride (Cd1−xMgxTe) for room temperature X- and gamma-ray detectors
Elsevier | 2012|Keywords: B2. Semiconducting II-VI materials -
Synthesis of uniformly distributed single- and double-sided zinc oxide (ZnO) nanocombs
Elsevier | 2015|Keywords: B2. Semiconducting II–VI materials -
Extended defects in CdZnTe crystals: Effects on device performance
Elsevier | 2010|Keywords: B2. Semiconducting II–VI materials -
Preparation and characterization of epitaxial growth of ZnO nanotip arrays by hydrothermal method
Elsevier | 2012|Keywords: B2. Semiconducting II–VI materials -
Growth and characterization of single crystalline Zn0.8–xMg0.2AlxO films with UV band gap on GaN/Al2O3 template by RF magnetron sputtering
Elsevier | 2012|Keywords: B2. Semiconducting II-VI materials -
Dense vertical nanoplates arrays and nanobelts of indium doped ZnO grown by thermal treatment of ZnS–In2O3 powders
Elsevier | 2010|Keywords: B2. Semiconducting II–VI materials -
Structures and optical properties of CdSe nano flakes synthesized by an elemental direct reaction method
Elsevier | 2022|Keywords: B2. Semiconducting II-VI materials -
The influence of deposition temperature on growth mode, optical and mechanical properties of ZnO films prepared by the ALD method
Elsevier | 2012|Keywords: B2. Semiconducting II-VI materials -
p-type conductivity control of heteroepitaxially grown ZnO films by N and Te codoping and thermal annealing
Elsevier | 2012|Keywords: B2. Semiconducting II–VI materials -
Growth, characterization, optical and vibrational properties of Sm3+ doped Cd0.8Zn0.2S semiconductor compounds
Elsevier | 2013|Keywords: B2. Semiconducting II-VI materials -
Study of the extended defects in CdZnTe crystal
Elsevier | 2020|Keywords: B2. Semiconducting II-VI materials -
CdTe thin films grown by pulsed laser deposition using powder as target: Effect of substrate temperature
Elsevier | 2013|Keywords: B2. Semiconducting II-VI materials -
Defect levels characterized by photoconductivity and thermally stimulated current in CdZnTe crystals
Elsevier | 2021|Keywords: B2. Semiconducting II-VI materials -
Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy
Elsevier | 2010|Keywords: B2. Semiconducting II–VI materials -
Growth and characterization of room temperature radiation detection material Cd0.95Mg0.05Te
Elsevier | 2020|Keywords: B2. Semiconducting II-VI materials -
Quality improvement of CdMnTe:In single crystals by an effective post-growth annealing
Elsevier | 2016|Keywords: B2 Semiconducting II–VI materials -
Donor impurity incorporation during layer growth of Zn II-VI semiconductors
Elsevier | 2017|Keywords: B2. Semiconducting II-VI materials -
Degenerated MgZnO films obtained by excessive zinc
Elsevier | 2012|Keywords: B2. Semiconducting II–VI materials -
Structural and optical characterizations of nitrogen-doped ZnO nanowires grown by MOCVD
Elsevier | 2010|Keywords: B2.Semiconducting II-VI materials -
Axial distribution of deep-level defects in as-grown CdZnTe:In ingots and their effects on the material׳s electrical properties
Elsevier | 2014|Keywords: B2. Semiconducting II–VI materials
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