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Half a Century in Solid-State Electronics. On the Centenary of the Birth of Academician B.M. Vul
British Library Online Contents | 2003| -
A Preliminary Classification of the Centers Related to Yb^3^+ Ions in the Yb-Implanted GaAs Crystals
British Library Online Contents | 1995| -
Photostimulated annealing of ion-implanted GaP and GaAs layers
British Library Online Contents | 1992| -
Sulphur- and Selenium-Containing Yb^3^+-Based Luminescent Centers in GaAs Crystals
British Library Online Contents | 1996| -
Photo-Assisted Annealing of Ion-Implanted GaAs/AlGaAs Structures
British Library Online Contents | 1996| -
Photostimulated annealing of ytterbium-implanted indium phosphide crystals
British Library Online Contents | 1992| -
The Effect of O, F, and Li on Luminescence of GaAs Implanted with Yb
British Library Online Contents | 1994| -
Photoluminescence from ZnTe:Yb films grown on (100) GaAs by molecular beam epitaxy
American Institute of Physics | 2001| -
LUMINESCENCE OF ZnSe/CdZnSe STRUCTURES INCLUDING STRUCTURES WITH A LOWERED DIMENSION GROWN AND Yb-DOPED IN THE COURSE OF MOLECULAR BEAM EPITAXY
British Library Online Contents | 2003| -
Photoluminescence from ZnTe:Yb films grown on (100) GaAs by molecular beam epitaxy
British Library Online Contents | 2001| -
Energy Levels in a Solitary Quantum Well in a Strong Electric Field
British Library Online Contents | 2001| -
INITIAL CLASSIFICATION OF LUMINESCENCE CENTERS INVOLVING Yb^3^+ IONS IN GaP CRYSTALS
British Library Online Contents | 1999| -
The Effect of O. S. Se, and Te on the Luminescence of Yb-Implanted GaAs
British Library Online Contents | 1995|
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