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Designing high k dielectric films with LiPON–Al2O3 hybrid structure by atomic layer deposition
IOP Institute of Physics | 2022|Keywords: 77.55.D- -
Observing ferroelastic switching in Hf0.5Zr0.5O2 thin film
IOP Institute of Physics | 2024|Keywords: 77.55.D -
Tensile stress regulated microstructures and ferroelectric properties of Hf0.5Zr0.5O2 films
IOP Institute of Physics | 2023|Keywords: 77.55.D- -
Starting layer dependence of the atomic-layer-deposited HfAlOx films on GaAs
National licenceIOP Institute of Physics | 2012|Keywords: 77.55.D− -
Impact of annealing temperature on the ferroelectric properties of W/Hf0.5Zr0.5O2/W capacitor
IOP Institute of Physics | 2023|Keywords: 77.55.D- -
Saturation thickness of stacked SiO2 in atomic-layer-deposited Al2O3 gate on 4H-SiC
IOP Institute of Physics | 2023|Keywords: 77.55.D- -
Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field
IOP Institute of Physics | 2022|Keywords: 77.55.D -
Time-dependent dielectric breakdown in pure and lightly Al-doped Ta2O5 stacks
National licenceIOP Institute of Physics | 2013|Keywords: 77.55.D− -
Growth of thin zirconium oxide films on the 6H–SiC(0001) surface
Elsevier | 2012|Keywords: 77.55.D− -
Calculation of growth per cycle (GPC) of atomic layer deposited aluminium oxide nanolayers and dependence of GPC on surface OH concentration
Springer Verlag | 2014|Keywords: 77.55.D -
A physics-based potential and electric field model of a nanoscale rectangular high-K gate dielectric HEMT
Springer Verlag | 2015|Keywords: 77.55.D−
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