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Carbon related hillock formation and its impact on the optoelectronic properties of GaN/AlGaN heterostructures grown on Si(111)
American Institute of Physics | 2020| -
Defect structure of Ge(111)/cubic Pr2O3(111)/Si(111) heterostructures: Thickness and annealing dependence
National licenceAmerican Institute of Physics | 2009| -
Lateral Selective SiGe Growth for Dislocation-Free Virtual Substrate Fabrication
British Library Conference Proceedings | 2022| -
(Invited) Nickel and Nickel-Platinum Silicide for BiCMOS Devices
British Library Conference Proceedings | 2020| -
Vitamin E as an Antioxidant for Poly(etherurethane urea): In vivo Studies
British Library Online Contents | 1996| -
Shallow and Undoped Germanium Quantum Wells: A Playground for Spin and Hybrid Quantum Technology
Free accessBASE | 2019|Contributors: Schubert, M. A. -
(Invited) Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters
British Library Conference Proceedings | 2018| -
Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch−2 density
British Library Online Contents | 2008| -
Design, development and testing of a 31M wood composite stall regulated blade for serial production
British Library Conference Proceedings | 1998| -
Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)
American Institute of Physics | 2016| -
Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates
American Chemical Society | 2016|
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